New techniques for the study of Gunn diode contacts

William Gurney, J.W. Orton

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Measurements are reported which provide direct evidence of the relationship between the frequency-temperature behaviour of GaAs and InP Gunn diodes and the quality of their cathode contacts. The technique used consists of damaging the cathode contact in a controlled manner while monitoring the current-voltage characteristic and df/dT.

These results are compared with computer simulations of I-V characteristics and RF performance using a model diode with a region of either reduced carrier concentration or reduced mobility immediately beneath the contact. Qualitative agreement is obtained between theory and experiment.

Magnetoresistance measurements on diodes both before and after damage are analysed to show that the damaged contact region contains both reduced carrier concentration and reduced mobility. Computer simulation using an appropriate model predicts I-V characteristics in general agreement with experimental observations.
LanguageEnglish
Pages743-750
Number of pages8
JournalSolid State Electronics
Volume17
Issue number7
DOIs
Publication statusPublished - Jul 1974

Fingerprint

Gunn diodes
Carrier concentration
Diodes
Cathodes
Computer simulation
Magnetoresistance
Current voltage characteristics
computerized simulation
cathodes
diodes
Monitoring
damage
Experiments
electric potential
Temperature
temperature
gallium arsenide

Keywords

  • measurements
  • Gunn diodes

Cite this

Gurney, William ; Orton, J.W. / New techniques for the study of Gunn diode contacts. In: Solid State Electronics. 1974 ; Vol. 17, No. 7. pp. 743-750.
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New techniques for the study of Gunn diode contacts. / Gurney, William; Orton, J.W.

In: Solid State Electronics, Vol. 17, No. 7, 07.1974, p. 743-750.

Research output: Contribution to journalArticle

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T1 - New techniques for the study of Gunn diode contacts

AU - Gurney, William

AU - Orton, J.W.

PY - 1974/7

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AB - Measurements are reported which provide direct evidence of the relationship between the frequency-temperature behaviour of GaAs and InP Gunn diodes and the quality of their cathode contacts. The technique used consists of damaging the cathode contact in a controlled manner while monitoring the current-voltage characteristic and df/dT.These results are compared with computer simulations of I-V characteristics and RF performance using a model diode with a region of either reduced carrier concentration or reduced mobility immediately beneath the contact. Qualitative agreement is obtained between theory and experiment.Magnetoresistance measurements on diodes both before and after damage are analysed to show that the damaged contact region contains both reduced carrier concentration and reduced mobility. Computer simulation using an appropriate model predicts I-V characteristics in general agreement with experimental observations.

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U2 - 10.1016/0038-1101(74)90099-9

DO - 10.1016/0038-1101(74)90099-9

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T2 - Solid State Electronics

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