Near-threshold dielectronic recombination studies of Si-like ions

J. Kaur; T. W. Gorczyca; N. R. Badnell

doi:10.1088/1742-6596/635/5/052074

Near-threshold dielectronic recombination studies of Si-like ions

J. Kaur, T. W. Gorczyca, N. R. Badnell

Physics

Research output: Contribution to journal › Conference Contribution › peer-review

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Abstract

Dielectronic recombination rate coefficients are computed for the Si-like isoelectronic sequence, focusing on the near-threshold resonances of S²⁺.

Original language	English
Article number	052074
Number of pages	1
Journal	Journal of Physics: Conference Series
Volume	635
Issue number	5
Early online date	7 Sep 2015
DOIs	https://doi.org/10.1088/1742-6596/635/5/052074
Publication status	E-pub ahead of print - 7 Sep 2015
Event	XXIX International Conference on Photonic, Electronic, and Atomic Collisions (ICPEAC) - Toledo, Spain Duration: 22 Jul 2015 → 28 Jul 2015

Keywords

atoms
dielectronic recombinations
isoelectronic sequence
near thresholds
electron resonance

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10.1088/1742-6596/635/5/052074Licence: CC BY 3.0

Kaur-etal-JPCS2015-near-threshold-dielectronic-recombination-studies-of-Si-like-ionsFinal published version, 259 KBLicence: CC BY 3.0

Cite this

@article{41b5e60bec7441f79a6535f64e4e2066,

title = "Near-threshold dielectronic recombination studies of Si-like ions",

abstract = "Dielectronic recombination rate coefficients are computed for the Si-like isoelectronic sequence, focusing on the near-threshold resonances of S2+.",

keywords = "atoms, dielectronic recombinations, isoelectronic sequence, near thresholds, electron resonance",

author = "J. Kaur and Gorczyca, {T. W.} and Badnell, {N. R.}",

year = "2015",

month = sep,

day = "7",

doi = "10.1088/1742-6596/635/5/052074",

language = "English",

volume = "635",

journal = "Journal of Physics: Conference Series ",

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number = "5",

note = "XXIX International Conference on Photonic, Electronic, and Atomic Collisions (ICPEAC) ; Conference date: 22-07-2015 Through 28-07-2015",

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TY - JOUR

T1 - Near-threshold dielectronic recombination studies of Si-like ions

AU - Kaur, J.

AU - Gorczyca, T. W.

AU - Badnell, N. R.

PY - 2015/9/7

Y1 - 2015/9/7

N2 - Dielectronic recombination rate coefficients are computed for the Si-like isoelectronic sequence, focusing on the near-threshold resonances of S2+.

AB - Dielectronic recombination rate coefficients are computed for the Si-like isoelectronic sequence, focusing on the near-threshold resonances of S2+.

KW - atoms

KW - dielectronic recombinations

KW - isoelectronic sequence

KW - near thresholds

KW - electron resonance

UR - http://www.scopus.com/inward/record.url?scp=84948823182&partnerID=8YFLogxK

UR - http://iopscience.iop.org/1742-6596

UR - http://www.icpeac2015.com/

U2 - 10.1088/1742-6596/635/5/052074

DO - 10.1088/1742-6596/635/5/052074

M3 - Conference Contribution

AN - SCOPUS:84948823182

VL - 635

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 5

M1 - 052074

T2 - XXIX International Conference on Photonic, Electronic, and Atomic Collisions (ICPEAC)

Y2 - 22 July 2015 through 28 July 2015

ER -

Near-threshold dielectronic recombination studies of Si-like ions

Abstract

Keywords

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