Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters

P. Vennegues, B. S. Diaby, H. Kim-Chauveau, L. Bodiou, H. P. D. Schenk, E. Frayssinet, R. W. Martin, I. M. Watson

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