Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters

P. Vennegues, B. S. Diaby, H. Kim-Chauveau, L. Bodiou, H. P. D. Schenk, E. Frayssinet, R. W. Martin, I. M. Watson

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Our study of samples grown in different metalorganic chemical vapor deposition reactors and with different growth conditions reveals that V-pits are always present in (InxAl1-x)N films whatever the layer thickness and the InN content. V-pits are empty inverted pyramids terminating threading dislocations. InN-rich triangular regions are present around the threading dislocations terminated by pits with a hexagonal 6-fold symmetry distribution in {11 - 20} planes. The nature of the facets of the V-pits depends on the growth conditions: pits with either {11 - 2l}, I being between 1 and 3, or {1 - 101} facets have been observed. Moreover, the nature of the threading dislocations terminated by pits also depends on the growth conditions. Our observations suggest that with a high V/III ratio only edge a + c-type dislocations are terminated by pits whereas with a low V/III ratio both edge a-type and mixed a + c-type dislocations are terminated by pits.

Original languageEnglish
Pages (from-to)108-114
Number of pages7
JournalJournal of Crystal Growth
Volume353
Issue number1
DOIs
Publication statusPublished - 15 Aug 2012

Keywords

  • epitaxy-grown
  • nature and origin
  • V-defects
  • metalorganic vapor phase
  • layers
  • growth parameters
  • layer thickness
  • function of InN content
  • metalorganic chemical vapor deposition
  • semiconducting indium compounds
  • nitrides
  • crystal morphology
  • defects

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