Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

Antonio Jose Marques Trindade, Benoit Jack Eloi Guilhabert, David Massoubre, Dandan Zhu, Nicolas Laurand, Erdan Gu, Ian Watson, Colin J Humphreys, Martin Dawson

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Abstract

The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486 nm with a forward-directed optical output power up to 80 μW (355 mW/cm2) when operated at a current density of 20 A/cm2.
Original languageEnglish
Article number253302
Number of pages4
JournalApplied Physics Letters
Volume103
Issue number25
DOIs
Publication statusPublished - 17 Dec 2013

Keywords

  • light emitting diodes
  • polymers
  • plasma etching
  • III-V semiconductors

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