Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

Antonio Jose Marques Trindade, Benoit Jack Eloi Guilhabert, David Massoubre, Dandan Zhu, Nicolas Laurand, Erdan Gu, Ian Watson, Colin J Humphreys, Martin Dawson

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486 nm with a forward-directed optical output power up to 80 μW (355 mW/cm2) when operated at a current density of 20 A/cm2.
LanguageEnglish
Article number253302
Number of pages4
JournalApplied Physics Letters
Volume103
Issue number25
DOIs
Publication statusPublished - 17 Dec 2013

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gallium nitrides
printing
indium
light emitting diodes
aluminum
pens
format
spacing
current density
output

Keywords

  • light emitting diodes
  • polymers
  • plasma etching
  • III-V semiconductors

Cite this

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title = "Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates",
abstract = "The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486 nm with a forward-directed optical output power up to 80 μW (355 mW/cm2) when operated at a current density of 20 A/cm2.",
keywords = "light emitting diodes, polymers, plasma etching, III-V semiconductors",
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Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates. / Trindade, Antonio Jose Marques; Guilhabert, Benoit Jack Eloi; Massoubre, David; Zhu, Dandan; Laurand, Nicolas; Gu, Erdan; Watson, Ian; Humphreys, Colin J; Dawson, Martin.

In: Applied Physics Letters, Vol. 103, No. 25, 253302, 17.12.2013.

Research output: Contribution to journalArticle

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AU - Trindade, Antonio Jose Marques

AU - Guilhabert, Benoit Jack Eloi

AU - Massoubre, David

AU - Zhu, Dandan

AU - Laurand, Nicolas

AU - Gu, Erdan

AU - Watson, Ian

AU - Humphreys, Colin J

AU - Dawson, Martin

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AB - The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486 nm with a forward-directed optical output power up to 80 μW (355 mW/cm2) when operated at a current density of 20 A/cm2.

KW - light emitting diodes

KW - polymers

KW - plasma etching

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