Nanoindentation of polysiliocn and single crystal silicon: molecular dynamics simulation and experimental validation

Saurav Goel, Nadimul Haque Faisal, Xichun Luo, Jiwang Yan, Anupam Agrawal

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

This paper presents novel advances in the deformation behaviour of polycrystalline and single crystal silicon using molecular dynamics (MD) simulation and validation of the same via nanoindentation experiments. In order to unravel the mechanism of deformation, four simulations were performed: indentation of a polycrystalline silicon substrate with a (i) Berkovich pyramidal and a (ii) spherical (arc) indenter, and (iii and iv) indentation of a single crystal silicon substrate with these two indenters. The simulation results reveal that high pressure phase transformation (HPPT) in silicon (Si-I to Si-II phase transformation) occurred in all cases; however, its extent and the manner in which it occurred differed significantly between polycrystalline silicon and single crystal silicon, and was the main driver of differences in the nanoindentation deformation behaviour between these two types of silicon. Interestingly, in polycrystalline silicon, the HPPT was observed to occur more preferentially along the grain boundaries than across the grain boundaries. An automated dislocation extraction algorithm (DXA) revealed no dislocations in the deformation zone, suggesting that HPPT is the primary mechanism in inducing plasticity in silicon.
LanguageEnglish
Article number275304
Number of pages14
JournalJournal of Physics D: Applied Physics
Volume47
Issue number27
Early online date13 Jun 2014
DOIs
Publication statusPublished - 2014

Fingerprint

Silicon
Nanoindentation
nanoindentation
Molecular dynamics
Single crystals
molecular dynamics
single crystals
Computer simulation
silicon
Phase transitions
Polysilicon
crystals
phase transformations
simulation
Indentation
Grain boundaries
indentation
Substrates
grain boundaries
Dislocations (crystals)

Keywords

  • polycrystalline silicon
  • single crystal silicon
  • molecular dynamics

Cite this

@article{57a653b749d74982a80c80e4ab4488e3,
title = "Nanoindentation of polysiliocn and single crystal silicon: molecular dynamics simulation and experimental validation",
abstract = "This paper presents novel advances in the deformation behaviour of polycrystalline and single crystal silicon using molecular dynamics (MD) simulation and validation of the same via nanoindentation experiments. In order to unravel the mechanism of deformation, four simulations were performed: indentation of a polycrystalline silicon substrate with a (i) Berkovich pyramidal and a (ii) spherical (arc) indenter, and (iii and iv) indentation of a single crystal silicon substrate with these two indenters. The simulation results reveal that high pressure phase transformation (HPPT) in silicon (Si-I to Si-II phase transformation) occurred in all cases; however, its extent and the manner in which it occurred differed significantly between polycrystalline silicon and single crystal silicon, and was the main driver of differences in the nanoindentation deformation behaviour between these two types of silicon. Interestingly, in polycrystalline silicon, the HPPT was observed to occur more preferentially along the grain boundaries than across the grain boundaries. An automated dislocation extraction algorithm (DXA) revealed no dislocations in the deformation zone, suggesting that HPPT is the primary mechanism in inducing plasticity in silicon.",
keywords = "polycrystalline silicon, single crystal silicon, molecular dynamics",
author = "Saurav Goel and Faisal, {Nadimul Haque} and Xichun Luo and Jiwang Yan and Anupam Agrawal",
year = "2014",
doi = "10.1088/0022-3727/47/27/275304",
language = "English",
volume = "47",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
number = "27",

}

Nanoindentation of polysiliocn and single crystal silicon : molecular dynamics simulation and experimental validation. / Goel, Saurav ; Faisal, Nadimul Haque; Luo, Xichun; Yan, Jiwang; Agrawal, Anupam.

In: Journal of Physics D: Applied Physics, Vol. 47, No. 27, 275304, 2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Nanoindentation of polysiliocn and single crystal silicon

T2 - Journal of Physics D: Applied Physics

AU - Goel, Saurav

AU - Faisal, Nadimul Haque

AU - Luo, Xichun

AU - Yan, Jiwang

AU - Agrawal, Anupam

PY - 2014

Y1 - 2014

N2 - This paper presents novel advances in the deformation behaviour of polycrystalline and single crystal silicon using molecular dynamics (MD) simulation and validation of the same via nanoindentation experiments. In order to unravel the mechanism of deformation, four simulations were performed: indentation of a polycrystalline silicon substrate with a (i) Berkovich pyramidal and a (ii) spherical (arc) indenter, and (iii and iv) indentation of a single crystal silicon substrate with these two indenters. The simulation results reveal that high pressure phase transformation (HPPT) in silicon (Si-I to Si-II phase transformation) occurred in all cases; however, its extent and the manner in which it occurred differed significantly between polycrystalline silicon and single crystal silicon, and was the main driver of differences in the nanoindentation deformation behaviour between these two types of silicon. Interestingly, in polycrystalline silicon, the HPPT was observed to occur more preferentially along the grain boundaries than across the grain boundaries. An automated dislocation extraction algorithm (DXA) revealed no dislocations in the deformation zone, suggesting that HPPT is the primary mechanism in inducing plasticity in silicon.

AB - This paper presents novel advances in the deformation behaviour of polycrystalline and single crystal silicon using molecular dynamics (MD) simulation and validation of the same via nanoindentation experiments. In order to unravel the mechanism of deformation, four simulations were performed: indentation of a polycrystalline silicon substrate with a (i) Berkovich pyramidal and a (ii) spherical (arc) indenter, and (iii and iv) indentation of a single crystal silicon substrate with these two indenters. The simulation results reveal that high pressure phase transformation (HPPT) in silicon (Si-I to Si-II phase transformation) occurred in all cases; however, its extent and the manner in which it occurred differed significantly between polycrystalline silicon and single crystal silicon, and was the main driver of differences in the nanoindentation deformation behaviour between these two types of silicon. Interestingly, in polycrystalline silicon, the HPPT was observed to occur more preferentially along the grain boundaries than across the grain boundaries. An automated dislocation extraction algorithm (DXA) revealed no dislocations in the deformation zone, suggesting that HPPT is the primary mechanism in inducing plasticity in silicon.

KW - polycrystalline silicon

KW - single crystal silicon

KW - molecular dynamics

U2 - 10.1088/0022-3727/47/27/275304

DO - 10.1088/0022-3727/47/27/275304

M3 - Article

VL - 47

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 27

M1 - 275304

ER -