Nanogranular Cadmium Sulfoselenide Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method for Optoelectronic Applications

Tejasvinee S. Bhat; Sawanta S. Mali; Jyoti V. Patil; Shirish T. Killedar; Trishala R. Desai; Ashwinee N. Patil; Chang Kook Hong; Tukaram D. Dongale; Pramod S. Patil

doi:10.1002/pssa.202000002

Nanogranular Cadmium Sulfoselenide Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method for Optoelectronic Applications

Tejasvinee S. Bhat, Sawanta S. Mali, Jyoti V. Patil, Shirish T. Killedar, Trishala R. Desai, Ashwinee N. Patil, Chang Kook Hong^*, Tukaram D. Dongale^*, Pramod S. Patil^*

^*Corresponding author for this work

Pure And Applied Chemistry

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A bottom-up, simple, and promising successive ionic layer adsorption and reaction (SILAR) method is used to synthesize cadmium sulfoselenide (CdS_xSe_1–x) thin films. The structural, morphological, and optical properties of the CdS_xSe_1–x thin films are studied as a function of bath composition. X-ray diffraction (XRD) study reveals that the CdS_xSe_1–x films are nanocrystalline in nature having hexagonal crystal structure. The morphology studies show that the films are transformed from nanogranular to interconnected net-like structures as a function of bath composition. The deposited CdS_xSe_1–x thin films are tested for photoelectrochemical (PEC) application and CSSe_0.4 sample shows the highest power conversion efficiency (PCE) of 0.55%. Furthermore, Al/CSSe_0.4/FTO thin-film device shows excellent nonvolatile memory properties in the visible light illumination with 10 000 endurance cycles and can retain the data up to 1000 s with good memory window and uniformity in the resistive switching process. It is noteworthy that, the CdS_xSe_1–x is a versatile and functional material for optoelectronics.

Original language	English
Article number	2000002
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	217
Issue number	15
Early online date	17 May 2020
DOIs	https://doi.org/10.1002/pssa.202000002
Publication status	Published - 1 Aug 2020

Keywords

cadmium sulfoselenide
nonvolatile memory
photo-induced resistive switching
photoelectrochemical solar cells

Access to Document

10.1002/pssa.202000002

Cite this

Bhat, T. S., Mali, S. S., Patil, J. V., Killedar, S. T., Desai, T. R., Patil, A. N., Hong, C. K., Dongale, T. D., & Patil, P. S. (2020). Nanogranular Cadmium Sulfoselenide Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method for Optoelectronic Applications. Physica Status Solidi (A) Applications and Materials Science, 217(15), Article 2000002. https://doi.org/10.1002/pssa.202000002

@article{96216fc04a3b4ba48fdc085de453273e,

title = "Nanogranular Cadmium Sulfoselenide Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method for Optoelectronic Applications",

abstract = "A bottom-up, simple, and promising successive ionic layer adsorption and reaction (SILAR) method is used to synthesize cadmium sulfoselenide (CdSxSe1–x) thin films. The structural, morphological, and optical properties of the CdSxSe1–x thin films are studied as a function of bath composition. X-ray diffraction (XRD) study reveals that the CdSxSe1–x films are nanocrystalline in nature having hexagonal crystal structure. The morphology studies show that the films are transformed from nanogranular to interconnected net-like structures as a function of bath composition. The deposited CdSxSe1–x thin films are tested for photoelectrochemical (PEC) application and CSSe0.4 sample shows the highest power conversion efficiency (PCE) of 0.55%. Furthermore, Al/CSSe0.4/FTO thin-film device shows excellent nonvolatile memory properties in the visible light illumination with 10 000 endurance cycles and can retain the data up to 1000 s with good memory window and uniformity in the resistive switching process. It is noteworthy that, the CdSxSe1–x is a versatile and functional material for optoelectronics.",

keywords = "cadmium sulfoselenide, nonvolatile memory, photo-induced resistive switching, photoelectrochemical solar cells",

author = "Bhat, {Tejasvinee S.} and Mali, {Sawanta S.} and Patil, {Jyoti V.} and Killedar, {Shirish T.} and Desai, {Trishala R.} and Patil, {Ashwinee N.} and Hong, {Chang Kook} and Dongale, {Tukaram D.} and Patil, {Pramod S.}",

year = "2020",

month = aug,

day = "1",

doi = "10.1002/pssa.202000002",

language = "English",

volume = "217",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

number = "15",

}

Bhat, TS, Mali, SS, Patil, JV, Killedar, ST, Desai, TR, Patil, AN, Hong, CK, Dongale, TD & Patil, PS 2020, 'Nanogranular Cadmium Sulfoselenide Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method for Optoelectronic Applications', Physica Status Solidi (A) Applications and Materials Science, vol. 217, no. 15, 2000002. https://doi.org/10.1002/pssa.202000002

Nanogranular Cadmium Sulfoselenide Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method for Optoelectronic Applications. / Bhat, Tejasvinee S.; Mali, Sawanta S.; Patil, Jyoti V. et al.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 217, No. 15, 2000002, 01.08.2020.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Nanogranular Cadmium Sulfoselenide Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method for Optoelectronic Applications

AU - Bhat, Tejasvinee S.

AU - Mali, Sawanta S.

AU - Patil, Jyoti V.

AU - Killedar, Shirish T.

AU - Desai, Trishala R.

AU - Patil, Ashwinee N.

AU - Hong, Chang Kook

AU - Dongale, Tukaram D.

AU - Patil, Pramod S.

PY - 2020/8/1

Y1 - 2020/8/1

N2 - A bottom-up, simple, and promising successive ionic layer adsorption and reaction (SILAR) method is used to synthesize cadmium sulfoselenide (CdSxSe1–x) thin films. The structural, morphological, and optical properties of the CdSxSe1–x thin films are studied as a function of bath composition. X-ray diffraction (XRD) study reveals that the CdSxSe1–x films are nanocrystalline in nature having hexagonal crystal structure. The morphology studies show that the films are transformed from nanogranular to interconnected net-like structures as a function of bath composition. The deposited CdSxSe1–x thin films are tested for photoelectrochemical (PEC) application and CSSe0.4 sample shows the highest power conversion efficiency (PCE) of 0.55%. Furthermore, Al/CSSe0.4/FTO thin-film device shows excellent nonvolatile memory properties in the visible light illumination with 10 000 endurance cycles and can retain the data up to 1000 s with good memory window and uniformity in the resistive switching process. It is noteworthy that, the CdSxSe1–x is a versatile and functional material for optoelectronics.

AB - A bottom-up, simple, and promising successive ionic layer adsorption and reaction (SILAR) method is used to synthesize cadmium sulfoselenide (CdSxSe1–x) thin films. The structural, morphological, and optical properties of the CdSxSe1–x thin films are studied as a function of bath composition. X-ray diffraction (XRD) study reveals that the CdSxSe1–x films are nanocrystalline in nature having hexagonal crystal structure. The morphology studies show that the films are transformed from nanogranular to interconnected net-like structures as a function of bath composition. The deposited CdSxSe1–x thin films are tested for photoelectrochemical (PEC) application and CSSe0.4 sample shows the highest power conversion efficiency (PCE) of 0.55%. Furthermore, Al/CSSe0.4/FTO thin-film device shows excellent nonvolatile memory properties in the visible light illumination with 10 000 endurance cycles and can retain the data up to 1000 s with good memory window and uniformity in the resistive switching process. It is noteworthy that, the CdSxSe1–x is a versatile and functional material for optoelectronics.

KW - cadmium sulfoselenide

KW - nonvolatile memory

KW - photo-induced resistive switching

KW - photoelectrochemical solar cells

UR - http://www.scopus.com/inward/record.url?scp=85085552921&partnerID=8YFLogxK

U2 - 10.1002/pssa.202000002

DO - 10.1002/pssa.202000002

M3 - Article

AN - SCOPUS:85085552921

SN - 1862-6300

VL - 217

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 15

M1 - 2000002

ER -

Nanogranular Cadmium Sulfoselenide Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method for Optoelectronic Applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this