Nanofabrication of gallium nitride photonic crystal light-emitting diodes

A.Z Khokhar, K. Parsons, G. Hubbard, F. Rahman, D.S. MacIntyre, C. Xiong, D. Massoubre, Z. Gong, N.P. Johnson, R.M. De La Rue, I.M. Watson, E. Gu, M.D. Dawson, S.J. Abbott, M.D.B Charlton, M. Tillin

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We describe a comparison of nanofabrication technologies for the fabrication of 2D photonic crystal structures on GaN/InGaN blue LEDs. Such devices exhibit enhanced brightness and the possibility of controlling the angular emission profile of emitted light. This paper describes three nano lithography techniques for patterning photonic crystal structures on the emitting faces of LEDs: direct-write electron beam lithography, hard stamp nanoimprint lithography and soft-stamp nanoimprint lithography with disposable embossing masters. In each case we describe variations on the technique as well as its advantages and disadvantages. Complete process details have been given for all three techniques. In addition, we show how high performance GaN dry etch techniques, coupled with optical process monitoring can transfer resist patterns into underlying GaN material with high fidelity.
Original languageEnglish
Pages (from-to)2200-2207
Number of pages7
JournalMicroelectronic Engineering
Volume87
Issue number11
DOIs
Publication statusPublished - Nov 2010

Keywords

  • light-emitting diodes
  • photonic crystals
  • nanolithography
  • GaN dry-etching

Fingerprint Dive into the research topics of 'Nanofabrication of gallium nitride photonic crystal light-emitting diodes'. Together they form a unique fingerprint.

  • Projects

    Cite this

    Khokhar, A. Z., Parsons, K., Hubbard, G., Rahman, F., MacIntyre, D. S., Xiong, C., Massoubre, D., Gong, Z., Johnson, N. P., De La Rue, R. M., Watson, I. M., Gu, E., Dawson, M. D., Abbott, S. J., Charlton, M. D. B., & Tillin, M. (2010). Nanofabrication of gallium nitride photonic crystal light-emitting diodes. Microelectronic Engineering, 87(11), 2200-2207. https://doi.org/10.1016/j.mee.2010.02.003