Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches

Zongwei Xu, Lei Liu, Zhongdu He, Dongyuan Tian, Alexander Hartmaier, Junjie Zhang, Xichun Luo, Mathias Rommel, Kai Nordlund, Guoxiong Zhang, Fengzhou Fang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Nanocutting mechanism of single crystal 6H-SiC is investigated through a novel scanning electron microscope setup in this paper. Various undeformed chip thicknesses on (0001) < 1–100 > orientation are adopted in the nanocutting experiments. Phase transformation and dislocation activities involved in the 6H-SiC nanocutting process are also characterized and analyzed. Two methods of stress-assisted and ion implant-assisted nanocutting are studied to improve 6H-SiC ductile machining ability. Results show that stress-assisted method can effectively decrease the hydrostatic stress and help to activate dislocation motion and ductile machining; ion implant-induced damages are helpful to improve the ductile machining ability from MD simulation and continuous nanocutting experiments under the online observation platform.
Original languageEnglish
Pages (from-to)3869–3880
Number of pages12
JournalInternational Journal of Advanced Manufacturing Technology
Volume106
Early online date9 Jan 2020
DOIs
Publication statusPublished - 29 Feb 2020

Keywords

  • diamond turning
  • silicon carbide
  • phase transformation
  • surface integrity
  • ion beam machining

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