Abstract
In this paper a detailed quantitative comparison between two competing high voltage converter technologies is performed, namely series connection of semiconductor power devices versus multilevel converters. The comparison is based on converter losses (conduction and switching), total harmonic distortion and distortion factor for the output phase arid line voltages, and common mode voltage at different modulation frequency ratios.
Original language | English |
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Title of host publication | Power electronics, machines and drives (PEMD) 2004 |
Subtitle of host publication | proceedings of the second international conference |
Place of Publication | New York |
Publisher | IEEE |
Pages | 1-5 |
Number of pages | 5 |
ISBN (Print) | 0863413838 |
DOIs | |
Publication status | Published - 2004 |
Event | 2nd International Conference on Power Electronics, Machines and Drives, 2004. (PEMD 2004). - , United Kingdom Duration: 31 Mar 2004 → 2 Apr 2004 |
Conference
Conference | 2nd International Conference on Power Electronics, Machines and Drives, 2004. (PEMD 2004). |
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Country/Territory | United Kingdom |
Period | 31/03/04 → 2/04/04 |
Keywords
- multilevel converters
- series connection
- igbt evaluation
- high-power
- high-voltage
- applications
- PWM invertors
- switching convertors
- losses
- insulated gate bipolar transistors