Multilevel converters and series connection of IGBT evaluation for high-power, high-voltage applications

A. Massoud, S.J. Finney, B.W. Williams

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

16 Citations (Scopus)

Abstract

In this paper a detailed quantitative comparison between two competing high voltage converter technologies is performed, namely series connection of semiconductor power devices versus multilevel converters. The comparison is based on converter losses (conduction and switching), total harmonic distortion and distortion factor for the output phase arid line voltages, and common mode voltage at different modulation frequency ratios.

Original languageEnglish
Title of host publicationPower electronics, machines and drives (PEMD) 2004
Subtitle of host publicationproceedings of the second international conference
Place of PublicationNew York
PublisherIEEE
Pages1-5
Number of pages5
ISBN (Print)0863413838
DOIs
Publication statusPublished - 2004
Event2nd International Conference on Power Electronics, Machines and Drives, 2004. (PEMD 2004). - , United Kingdom
Duration: 31 Mar 20042 Apr 2004

Conference

Conference2nd International Conference on Power Electronics, Machines and Drives, 2004. (PEMD 2004).
CountryUnited Kingdom
Period31/03/042/04/04

Fingerprint

Insulated gate bipolar transistors (IGBT)
Electric potential
Harmonic distortion
Frequency modulation

Keywords

  • multilevel converters
  • series connection
  • igbt evaluation
  • high-power
  • high-voltage
  • applications
  • PWM invertors
  • switching convertors
  • losses
  • insulated gate bipolar transistors

Cite this

Massoud, A., Finney, S. J., & Williams, B. W. (2004). Multilevel converters and series connection of IGBT evaluation for high-power, high-voltage applications. In Power electronics, machines and drives (PEMD) 2004: proceedings of the second international conference (pp. 1-5). New York: IEEE. https://doi.org/10.1049/cp:20040249
Massoud, A. ; Finney, S.J. ; Williams, B.W. / Multilevel converters and series connection of IGBT evaluation for high-power, high-voltage applications. Power electronics, machines and drives (PEMD) 2004: proceedings of the second international conference. New York : IEEE, 2004. pp. 1-5
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Massoud, A, Finney, SJ & Williams, BW 2004, Multilevel converters and series connection of IGBT evaluation for high-power, high-voltage applications. in Power electronics, machines and drives (PEMD) 2004: proceedings of the second international conference. IEEE, New York, pp. 1-5, 2nd International Conference on Power Electronics, Machines and Drives, 2004. (PEMD 2004). , United Kingdom, 31/03/04. https://doi.org/10.1049/cp:20040249

Multilevel converters and series connection of IGBT evaluation for high-power, high-voltage applications. / Massoud, A.; Finney, S.J.; Williams, B.W.

Power electronics, machines and drives (PEMD) 2004: proceedings of the second international conference. New York : IEEE, 2004. p. 1-5.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

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T1 - Multilevel converters and series connection of IGBT evaluation for high-power, high-voltage applications

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AB - In this paper a detailed quantitative comparison between two competing high voltage converter technologies is performed, namely series connection of semiconductor power devices versus multilevel converters. The comparison is based on converter losses (conduction and switching), total harmonic distortion and distortion factor for the output phase arid line voltages, and common mode voltage at different modulation frequency ratios.

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KW - series connection

KW - igbt evaluation

KW - high-power

KW - high-voltage

KW - applications

KW - PWM invertors

KW - switching convertors

KW - losses

KW - insulated gate bipolar transistors

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Massoud A, Finney SJ, Williams BW. Multilevel converters and series connection of IGBT evaluation for high-power, high-voltage applications. In Power electronics, machines and drives (PEMD) 2004: proceedings of the second international conference. New York: IEEE. 2004. p. 1-5 https://doi.org/10.1049/cp:20040249