Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, C. Trager-Cowan

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/AlN(100nm)/Al2O3 high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.
LanguageEnglish
Article number127101
Number of pages13
JournalAIP Advances
Volume4
Issue number12
Early online date1 Dec 2014
DOIs
Publication statusPublished - Dec 2014

Fingerprint

Vapor phase epitaxy
High electron mobility transistors
high electron mobility transistors
Heterojunctions
interlayers
Metals
vapor phase epitaxy
Structural properties
Electric properties
electrical properties
metals
Electron microscopes
Scanning
Processing
Chemical analysis
electron microscopes
reactors
routes
conduction
optimization

Keywords

  • Ga incorporation
  • III-V semiconductors
  • Rutherford backscattering

Cite this

Naresh-Kumar, G. ; Vilalta-Clemente, A. ; Pandey, S. ; Skuridina, D. ; Behmenburg, H. ; Gamarra, P. ; Patriarche, G. ; Vickridge, I. ; di Forte-Poisson, M. A. ; Vogt, P. ; Kneissl, M. ; Morales, M. ; Ruterana, P. ; Cavallini, A. ; Cavalcoli, D. ; Giesen, C. ; Heuken, M. ; Trager-Cowan, C. / Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors. In: AIP Advances. 2014 ; Vol. 4, No. 12.
@article{bdd554b6a32c49fe80f7054fc543effd,
title = "Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors",
abstract = "We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/AlN(100nm)/Al2O3 high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schr{\"o}dinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.",
keywords = "Ga incorporation, III-V semiconductors, Rutherford backscattering",
author = "G. Naresh-Kumar and A. Vilalta-Clemente and S. Pandey and D. Skuridina and H. Behmenburg and P. Gamarra and G. Patriarche and I. Vickridge and {di Forte-Poisson}, {M. A.} and P. Vogt and M. Kneissl and M. Morales and P. Ruterana and A. Cavallini and D. Cavalcoli and C. Giesen and M. Heuken and C. Trager-Cowan",
year = "2014",
month = "12",
doi = "10.1063/1.4903227",
language = "English",
volume = "4",
journal = "AIP Advances",
issn = "2158-3226",
number = "12",

}

Naresh-Kumar, G, Vilalta-Clemente, A, Pandey, S, Skuridina, D, Behmenburg, H, Gamarra, P, Patriarche, G, Vickridge, I, di Forte-Poisson, MA, Vogt, P, Kneissl, M, Morales, M, Ruterana, P, Cavallini, A, Cavalcoli, D, Giesen, C, Heuken, M & Trager-Cowan, C 2014, 'Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors' AIP Advances, vol. 4, no. 12, 127101. https://doi.org/10.1063/1.4903227

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors. / Naresh-Kumar, G.; Vilalta-Clemente, A.; Pandey, S.; Skuridina, D.; Behmenburg, H.; Gamarra, P.; Patriarche, G.; Vickridge, I.; di Forte-Poisson, M. A.; Vogt, P.; Kneissl, M.; Morales, M.; Ruterana, P.; Cavallini, A.; Cavalcoli, D.; Giesen, C.; Heuken, M.; Trager-Cowan, C.

In: AIP Advances, Vol. 4, No. 12, 127101, 12.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

AU - Naresh-Kumar, G.

AU - Vilalta-Clemente, A.

AU - Pandey, S.

AU - Skuridina, D.

AU - Behmenburg, H.

AU - Gamarra, P.

AU - Patriarche, G.

AU - Vickridge, I.

AU - di Forte-Poisson, M. A.

AU - Vogt, P.

AU - Kneissl, M.

AU - Morales, M.

AU - Ruterana, P.

AU - Cavallini, A.

AU - Cavalcoli, D.

AU - Giesen, C.

AU - Heuken, M.

AU - Trager-Cowan, C.

PY - 2014/12

Y1 - 2014/12

N2 - We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/AlN(100nm)/Al2O3 high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

AB - We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/AlN(100nm)/Al2O3 high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

KW - Ga incorporation

KW - III-V semiconductors

KW - Rutherford backscattering

UR - http://scitation.aip.org/content/aip/journal/adva

U2 - 10.1063/1.4903227

DO - 10.1063/1.4903227

M3 - Article

VL - 4

JO - AIP Advances

T2 - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 12

M1 - 127101

ER -