MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks

Yanni Zhong; Nina Roscoe; Derrick Holliday; Stephen Finney

MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks

Yanni Zhong, Nina Roscoe, Derrick Holliday, Stephen Finney

Electronic And Electrical Engineering

Research output: Contribution to conference › Paper

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Abstract

A highly efficient DC-AC converter is key to the success of low-voltage DC (LVDC) distribution networks. Calculated power losses in a conventional IGBT 2-level converter, a SiC MOSFET 2-level converter, a Si MOSFET modular multilevel converter (MMC) and a GaN HEMT MMC are compared. Calculations suggest that the parallel-connected Si MOSFET MMC may be the most efficient topology for this LVDC application. In this paper, the current unbalance limits for the parallel-connected MOSFETs and the optimal number of parallel-connected MOSFETs for MMC are investigated. Experimental results are presented for current sharing in parallel-connected MOSFETs and for the verification of power loss in a single Si MMC module.

Original language	English
Number of pages	6
Publication status	Published - 21 Apr 2016
Event	8th IET International Conference on Power Electronics, Machines and Drives - The Hilton Hotel, Glasgow, United Kingdom Duration: 19 Apr 2016 → 21 Apr 2016

Conference

Conference	8th IET International Conference on Power Electronics, Machines and Drives
Abbreviated title	PEMD 2016
Country	United Kingdom
City	Glasgow
Period	19/04/16 → 21/04/16

Fingerprint

Electric power distribution

Insulated gate bipolar transistors (IGBT)

Electric potential

High electron mobility transistors

Topology

Keywords

MMC
MOSFET parallel-connection
LVDC
current sharing
thermal modelling

Cite this

Zhong, Y., Roscoe, N., Holliday, D., & Finney, S. (2016). MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks. Paper presented at 8th IET International Conference on Power Electronics, Machines and Drives, Glasgow, United Kingdom.

Zhong, Yanni ; Roscoe, Nina ; Holliday, Derrick ; Finney, Stephen. / MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks. Paper presented at 8th IET International Conference on Power Electronics, Machines and Drives, Glasgow, United Kingdom.6 p.

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title = "MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks",

abstract = "A highly efficient DC-AC converter is key to the success of low-voltage DC (LVDC) distribution networks. Calculated power losses in a conventional IGBT 2-level converter, a SiC MOSFET 2-level converter, a Si MOSFET modular multilevel converter (MMC) and a GaN HEMT MMC are compared. Calculations suggest that the parallel-connected Si MOSFET MMC may be the most efficient topology for this LVDC application. In this paper, the current unbalance limits for the parallel-connected MOSFETs and the optimal number of parallel-connected MOSFETs for MMC are investigated. Experimental results are presented for current sharing in parallel-connected MOSFETs and for the verification of power loss in a single Si MMC module.",

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author = "Yanni Zhong and Nina Roscoe and Derrick Holliday and Stephen Finney",

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Zhong, Y, Roscoe, N, Holliday, D & Finney, S 2016, 'MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks' Paper presented at 8th IET International Conference on Power Electronics, Machines and Drives, Glasgow, United Kingdom, 19/04/16 - 21/04/16, .

MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks. / Zhong, Yanni; Roscoe, Nina; Holliday, Derrick; Finney, Stephen.

2016. Paper presented at 8th IET International Conference on Power Electronics, Machines and Drives, Glasgow, United Kingdom.

Research output: Contribution to conference › Paper

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T1 - MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks

AU - Zhong, Yanni

AU - Roscoe, Nina

AU - Holliday, Derrick

AU - Finney, Stephen

N1 - © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2016/4/21

Y1 - 2016/4/21

N2 - A highly efficient DC-AC converter is key to the success of low-voltage DC (LVDC) distribution networks. Calculated power losses in a conventional IGBT 2-level converter, a SiC MOSFET 2-level converter, a Si MOSFET modular multilevel converter (MMC) and a GaN HEMT MMC are compared. Calculations suggest that the parallel-connected Si MOSFET MMC may be the most efficient topology for this LVDC application. In this paper, the current unbalance limits for the parallel-connected MOSFETs and the optimal number of parallel-connected MOSFETs for MMC are investigated. Experimental results are presented for current sharing in parallel-connected MOSFETs and for the verification of power loss in a single Si MMC module.

AB - A highly efficient DC-AC converter is key to the success of low-voltage DC (LVDC) distribution networks. Calculated power losses in a conventional IGBT 2-level converter, a SiC MOSFET 2-level converter, a Si MOSFET modular multilevel converter (MMC) and a GaN HEMT MMC are compared. Calculations suggest that the parallel-connected Si MOSFET MMC may be the most efficient topology for this LVDC application. In this paper, the current unbalance limits for the parallel-connected MOSFETs and the optimal number of parallel-connected MOSFETs for MMC are investigated. Experimental results are presented for current sharing in parallel-connected MOSFETs and for the verification of power loss in a single Si MMC module.

KW - MMC

KW - MOSFET parallel-connection

KW - LVDC

KW - current sharing

KW - thermal modelling

UR - http://conferences.theiet.org/pemd/

M3 - Paper

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Zhong Y, Roscoe N, Holliday D, Finney S. MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks. 2016. Paper presented at 8th IET International Conference on Power Electronics, Machines and Drives, Glasgow, United Kingdom.