MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks

Yanni Zhong; Nina Roscoe; Derrick Holliday; Stephen Finney

MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks

Yanni Zhong, Nina Roscoe, Derrick Holliday, Stephen Finney

Electronic And Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

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Abstract

A highly efficient DC-AC converter is key to the success of low-voltage DC (LVDC) distribution networks. Calculated power losses in a conventional IGBT 2-level converter, a SiC MOSFET 2-level converter, a Si MOSFET modular multilevel converter (MMC) and a GaN HEMT MMC are compared. Calculations suggest that the parallel-connected Si MOSFET MMC may be the most efficient topology for this LVDC application. In this paper, the current unbalance limits for the parallel-connected MOSFETs and the optimal number of parallel-connected MOSFETs for MMC are investigated. Experimental results are presented for current sharing in parallel-connected MOSFETs and for the verification of power loss in a single Si MMC module.

Original language	English
Number of pages	6
Publication status	Published - 21 Apr 2016
Event	8th IET International Conference on Power Electronics, Machines and Drives - The Hilton Hotel, Glasgow, United Kingdom Duration: 19 Apr 2016 → 21 Apr 2016

Conference

Conference	8th IET International Conference on Power Electronics, Machines and Drives
Abbreviated title	PEMD 2016
Country/Territory	United Kingdom
City	Glasgow
Period	19/04/16 → 21/04/16

Keywords

MMC
MOSFET parallel-connection
LVDC
current sharing
thermal modelling

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Zhong-etal-IET-PEMD-2016-MOSFET-parallel-connection-of-low-voltage-MMCAccepted author manuscript, 982 KB

Cite this

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title = "MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks",

abstract = "A highly efficient DC-AC converter is key to the success of low-voltage DC (LVDC) distribution networks. Calculated power losses in a conventional IGBT 2-level converter, a SiC MOSFET 2-level converter, a Si MOSFET modular multilevel converter (MMC) and a GaN HEMT MMC are compared. Calculations suggest that the parallel-connected Si MOSFET MMC may be the most efficient topology for this LVDC application. In this paper, the current unbalance limits for the parallel-connected MOSFETs and the optimal number of parallel-connected MOSFETs for MMC are investigated. Experimental results are presented for current sharing in parallel-connected MOSFETs and for the verification of power loss in a single Si MMC module.",

keywords = "MMC, MOSFET parallel-connection, LVDC, current sharing, thermal modelling",

author = "Yanni Zhong and Nina Roscoe and Derrick Holliday and Stephen Finney",

note = "{\textcopyright} 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.; 8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016 ; Conference date: 19-04-2016 Through 21-04-2016",

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T1 - MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks

AU - Zhong, Yanni

AU - Roscoe, Nina

AU - Holliday, Derrick

AU - Finney, Stephen

N1 - © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2016/4/21

Y1 - 2016/4/21

N2 - A highly efficient DC-AC converter is key to the success of low-voltage DC (LVDC) distribution networks. Calculated power losses in a conventional IGBT 2-level converter, a SiC MOSFET 2-level converter, a Si MOSFET modular multilevel converter (MMC) and a GaN HEMT MMC are compared. Calculations suggest that the parallel-connected Si MOSFET MMC may be the most efficient topology for this LVDC application. In this paper, the current unbalance limits for the parallel-connected MOSFETs and the optimal number of parallel-connected MOSFETs for MMC are investigated. Experimental results are presented for current sharing in parallel-connected MOSFETs and for the verification of power loss in a single Si MMC module.

AB - A highly efficient DC-AC converter is key to the success of low-voltage DC (LVDC) distribution networks. Calculated power losses in a conventional IGBT 2-level converter, a SiC MOSFET 2-level converter, a Si MOSFET modular multilevel converter (MMC) and a GaN HEMT MMC are compared. Calculations suggest that the parallel-connected Si MOSFET MMC may be the most efficient topology for this LVDC application. In this paper, the current unbalance limits for the parallel-connected MOSFETs and the optimal number of parallel-connected MOSFETs for MMC are investigated. Experimental results are presented for current sharing in parallel-connected MOSFETs and for the verification of power loss in a single Si MMC module.

KW - MMC

KW - MOSFET parallel-connection

KW - LVDC

KW - current sharing

KW - thermal modelling

UR - http://conferences.theiet.org/pemd/

M3 - Paper

T2 - 8th IET International Conference on Power Electronics, Machines and Drives

Y2 - 19 April 2016 through 21 April 2016

ER -

MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks

Abstract

Conference

Keywords

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MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Projects

Top & Tail Transformation programme- Protecting the last mile distribution networks

Interface And Network Architecture To Support EV Participation In Smart Grids

Cite this