MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks

Yanni Zhong, Nina Roscoe, Derrick Holliday, Stephen Finney

Research output: Contribution to conference › Paper

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Abstract

A highly efficient DC-AC converter is key to the success of low-voltage DC (LVDC) distribution networks. Calculated power losses in a conventional IGBT 2-level converter, a SiC MOSFET 2-level converter, a Si MOSFET modular multilevel converter (MMC) and a GaN HEMT MMC are compared. Calculations suggest that the parallel-connected Si MOSFET MMC may be the most efficient topology for this LVDC application. In this paper, the current unbalance limits for the parallel-connected MOSFETs and the optimal number of parallel-connected MOSFETs for MMC are investigated. Experimental results are presented for current sharing in parallel-connected MOSFETs and for the verification of power loss in a single Si MMC module.
Original languageEnglish
Number of pages6
Publication statusPublished - 21 Apr 2016
Event8th IET International Conference on Power Electronics, Machines and Drives - The Hilton Hotel, Glasgow, United Kingdom
Duration: 19 Apr 2016 → 21 Apr 2016

Conference

Conference8th IET International Conference on Power Electronics, Machines and Drives
Abbreviated titlePEMD 2016
CountryUnited Kingdom
CityGlasgow
Period19/04/16 → 21/04/16

Keywords

  • MMC
  • MOSFET parallel-connection
  • LVDC
  • current sharing
  • thermal modelling

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