Morphology of ultrathin CdSe quantum confinement layers in ZnSe matrices

K. G. Chinyama; K. P. O'Donnell; A. Rosenauer; D. Gerthsen

doi:10.1016/S0022-0248(99)00099-8

Morphology of ultrathin CdSe quantum confinement layers in ZnSe matrices

K. G. Chinyama^*, K. P. O'Donnell, A. Rosenauer, D. Gerthsen

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Using a combination of transmission electron microscopy (TEM), high resolution TEM (HRTEM), digital analysis of lattice images (DALI), and correspondence analysis (CA) we present at near-atomic resolution the morphology of a nominal 2 monolayer (ML) cadmium selenide (CdSe) quantum well (QW) between ZnSe barriers. We reveal the presence of approximately 10 ML zinc cadmium selenide (Zn_xCd_1-xSe) alloy insertion layer of varying composition in a ZnSe matrix. A spotty pattern in the plane of the layer indicates the presence of self-assembled clusters or islands similar to the structures commonly referred to as quantum dots. Further analysis indicates that these clusters, of less than 10 nm in lateral extent, themselves contain sites highly saturated with CdSe. Analysis of photoluminescence (PL) spectra suggests that the emission originates predominantly from excitons trapped in these islands.

Original language	English
Pages (from-to)	362-370
Number of pages	9
Journal	Journal of Crystal Growth
Volume	203
Issue number	3
DOIs	https://doi.org/10.1016/S0022-0248(99)00099-8
Publication status	Published - 1 Jun 1999

Keywords

morphology
interfacial roughness
compositional roughness
local latice parameter
local displacement

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10.1016/S0022-0248(99)00099-8

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@article{eee0f94e74e74bb5a4d08910a1d02c04,

title = "Morphology of ultrathin CdSe quantum confinement layers in ZnSe matrices",

abstract = "Using a combination of transmission electron microscopy (TEM), high resolution TEM (HRTEM), digital analysis of lattice images (DALI), and correspondence analysis (CA) we present at near-atomic resolution the morphology of a nominal 2 monolayer (ML) cadmium selenide (CdSe) quantum well (QW) between ZnSe barriers. We reveal the presence of approximately 10 ML zinc cadmium selenide (ZnxCd1-xSe) alloy insertion layer of varying composition in a ZnSe matrix. A spotty pattern in the plane of the layer indicates the presence of self-assembled clusters or islands similar to the structures commonly referred to as quantum dots. Further analysis indicates that these clusters, of less than 10 nm in lateral extent, themselves contain sites highly saturated with CdSe. Analysis of photoluminescence (PL) spectra suggests that the emission originates predominantly from excitons trapped in these islands.",

keywords = "morphology, interfacial roughness, compositional roughness, local latice parameter, local displacement",

author = "Chinyama, {K. G.} and O'Donnell, {K. P.} and A. Rosenauer and D. Gerthsen",

year = "1999",

month = jun,

day = "1",

doi = "10.1016/S0022-0248(99)00099-8",

language = "English",

volume = "203",

pages = "362--370",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - Morphology of ultrathin CdSe quantum confinement layers in ZnSe matrices

AU - Chinyama, K. G.

AU - O'Donnell, K. P.

AU - Rosenauer, A.

AU - Gerthsen, D.

PY - 1999/6/1

Y1 - 1999/6/1

N2 - Using a combination of transmission electron microscopy (TEM), high resolution TEM (HRTEM), digital analysis of lattice images (DALI), and correspondence analysis (CA) we present at near-atomic resolution the morphology of a nominal 2 monolayer (ML) cadmium selenide (CdSe) quantum well (QW) between ZnSe barriers. We reveal the presence of approximately 10 ML zinc cadmium selenide (ZnxCd1-xSe) alloy insertion layer of varying composition in a ZnSe matrix. A spotty pattern in the plane of the layer indicates the presence of self-assembled clusters or islands similar to the structures commonly referred to as quantum dots. Further analysis indicates that these clusters, of less than 10 nm in lateral extent, themselves contain sites highly saturated with CdSe. Analysis of photoluminescence (PL) spectra suggests that the emission originates predominantly from excitons trapped in these islands.

AB - Using a combination of transmission electron microscopy (TEM), high resolution TEM (HRTEM), digital analysis of lattice images (DALI), and correspondence analysis (CA) we present at near-atomic resolution the morphology of a nominal 2 monolayer (ML) cadmium selenide (CdSe) quantum well (QW) between ZnSe barriers. We reveal the presence of approximately 10 ML zinc cadmium selenide (ZnxCd1-xSe) alloy insertion layer of varying composition in a ZnSe matrix. A spotty pattern in the plane of the layer indicates the presence of self-assembled clusters or islands similar to the structures commonly referred to as quantum dots. Further analysis indicates that these clusters, of less than 10 nm in lateral extent, themselves contain sites highly saturated with CdSe. Analysis of photoluminescence (PL) spectra suggests that the emission originates predominantly from excitons trapped in these islands.

KW - morphology

KW - interfacial roughness

KW - compositional roughness

KW - local latice parameter

KW - local displacement

UR - http://www.scopus.com/inward/record.url?scp=0032687598&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(99)00099-8

DO - 10.1016/S0022-0248(99)00099-8

M3 - Article

AN - SCOPUS:0032687598

SN - 0022-0248

VL - 203

SP - 362

EP - 370

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3

ER -

Morphology of ultrathin CdSe quantum confinement layers in ZnSe matrices

Abstract

Keywords

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