Morphology of luminescent GaN films grown by molecular beam epitaxy

C. Trager-Cowan, K. P. O'Donnell, S. E. Hooper, C. T. Foxon

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

GaN thin films were grown by molecular beam epitaxy on sapphire substrates. Scanning electron (SE) and atomic force microscopies reveal that on a typical film an assembly of oriented hexagonal microcrystallites rises above a background of polycrystalline or amorphous material. Cathodoluminescence (CL) spectra of the films feature bright UV exciton peaks and a broad green emission band. We identify the exciton peaks as those of the wurtzite form of GaN. A comparison of SE and CL micrographs of the same sample area shows that the luminescence emanates almost entirely from the hexagonal crystallites.

LanguageEnglish
Pages355-357
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number3
DOIs
Publication statusPublished - 1 Dec 1996

Fingerprint

cathodoluminescence
molecular beam epitaxy
excitons
scanning
amorphous materials
wurtzite
crystallites
sapphire
electrons
assembly
atomic force microscopy
luminescence
thin films

Keywords

  • luminescence
  • GaN films
  • sapphire substrates

Cite this

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Morphology of luminescent GaN films grown by molecular beam epitaxy. / Trager-Cowan, C.; O'Donnell, K. P.; Hooper, S. E.; Foxon, C. T.

In: Applied Physics Letters, Vol. 68, No. 3, 01.12.1996, p. 355-357.

Research output: Contribution to journalArticle

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