Abstract
GaN thin films were grown by molecular beam epitaxy on sapphire substrates. Scanning electron (SE) and atomic force microscopies reveal that on a typical film an assembly of oriented hexagonal microcrystallites rises above a background of polycrystalline or amorphous material. Cathodoluminescence (CL) spectra of the films feature bright UV exciton peaks and a broad green emission band. We identify the exciton peaks as those of the wurtzite form of GaN. A comparison of SE and CL micrographs of the same sample area shows that the luminescence emanates almost entirely from the hexagonal crystallites.
| Original language | English |
|---|---|
| Pages (from-to) | 355-357 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 68 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1 Dec 1996 |
Keywords
- luminescence
- GaN films
- sapphire substrates
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Trager-Cowan, C., O'Donnell, K. P., Hooper, S. E., & Foxon, C. T. (1996). Morphology of luminescent GaN films grown by molecular beam epitaxy. Applied Physics Letters, 68(3), 355-357. https://doi.org/10.1063/1.116714