Morphology of luminescent GaN films grown by molecular beam epitaxy

C. Trager-Cowan; K. P. O'Donnell; S. E. Hooper; C. T. Foxon

doi:10.1063/1.116714

Morphology of luminescent GaN films grown by molecular beam epitaxy

C. Trager-Cowan, K. P. O'Donnell, S. E. Hooper, C. T. Foxon

Physics

Research output: Contribution to journal › Article

41 Citations (Scopus)

Abstract

GaN thin films were grown by molecular beam epitaxy on sapphire substrates. Scanning electron (SE) and atomic force microscopies reveal that on a typical film an assembly of oriented hexagonal microcrystallites rises above a background of polycrystalline or amorphous material. Cathodoluminescence (CL) spectra of the films feature bright UV exciton peaks and a broad green emission band. We identify the exciton peaks as those of the wurtzite form of GaN. A comparison of SE and CL micrographs of the same sample area shows that the luminescence emanates almost entirely from the hexagonal crystallites.

Language	English
Pages	355-357
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	3
DOIs	10.1063/1.116714
Publication status	Published - 1 Dec 1996

Fingerprint

cathodoluminescence

molecular beam epitaxy

excitons

scanning

amorphous materials

wurtzite

crystallites

sapphire

electrons

assembly

atomic force microscopy

luminescence

thin films

Keywords

luminescence
GaN films
sapphire substrates

Cite this

Trager-Cowan, C., O'Donnell, K. P., Hooper, S. E., & Foxon, C. T. (1996). Morphology of luminescent GaN films grown by molecular beam epitaxy. Applied Physics Letters, 68(3), 355-357. https://doi.org/10.1063/1.116714

Trager-Cowan, C. ; O'Donnell, K. P. ; Hooper, S. E. ; Foxon, C. T. / Morphology of luminescent GaN films grown by molecular beam epitaxy. In: Applied Physics Letters. 1996 ; Vol. 68, No. 3. pp. 355-357.

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Trager-Cowan, C , O'Donnell, KP, Hooper, SE & Foxon, CT 1996, 'Morphology of luminescent GaN films grown by molecular beam epitaxy' Applied Physics Letters, vol. 68, no. 3, pp. 355-357. https://doi.org/10.1063/1.116714

Morphology of luminescent GaN films grown by molecular beam epitaxy. / Trager-Cowan, C.; O'Donnell, K. P.; Hooper, S. E.; Foxon, C. T.

In: Applied Physics Letters, Vol. 68, No. 3, 01.12.1996, p. 355-357.

Research output: Contribution to journal › Article

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