Morphology of luminescent GaN films grown by molecular beam epitaxy

C. Trager-Cowan, K. P. O'Donnell, S. E. Hooper, C. T. Foxon

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)


GaN thin films were grown by molecular beam epitaxy on sapphire substrates. Scanning electron (SE) and atomic force microscopies reveal that on a typical film an assembly of oriented hexagonal microcrystallites rises above a background of polycrystalline or amorphous material. Cathodoluminescence (CL) spectra of the films feature bright UV exciton peaks and a broad green emission band. We identify the exciton peaks as those of the wurtzite form of GaN. A comparison of SE and CL micrographs of the same sample area shows that the luminescence emanates almost entirely from the hexagonal crystallites.

Original languageEnglish
Pages (from-to)355-357
Number of pages3
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 1 Dec 1996


  • luminescence
  • GaN films
  • sapphire substrates


Dive into the research topics of 'Morphology of luminescent GaN films grown by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this