Monolithic RF MEMS inductor using silicon MEMS foundry process

Research output: Contribution to journalArticle

Abstract

A successful design of a radio frequency inductor based on a silicon microelectromechanical system foundry process is presented. The suspended inductor has been realised in electroplated thick nickel with front side bulk micromachining of the substrate. The overall size of the inductor is ~1×1 mm. The inductors have been experimentally characterised, and inductances ~2 nH in the frequency range of 200 MHz to 7 GHz have been measured with a self-resonant frequency of 9.8 GHz. The peak measured value of the Q factor is 12 at 4 GHz. After de-embedding, the Q factor reaches 13 at 4.8 GHz. Simulation based on a parameter extraction method has been carried out for the inductor. There is a good agreement between simulated and experimental results.
LanguageEnglish
Pages5-8
Number of pages3
JournalMicro and Nano Letters
Volume1
Issue number1
DOIs
Publication statusPublished - 2006

Fingerprint

foundries
Parameter extraction
Micromachining
Foundries
Silicon
inductors
Nickel
Inductance
microelectromechanical systems
MEMS
Natural frequencies
silicon
Substrates
Q factors
micromachining
inductance
embedding
resonant frequencies
radio frequencies
frequency ranges

Keywords

  • silicon
  • elemental semiconductors
  • micromechanical devices
  • inductors
  • semiconductor device models
  • monolithic integrated circuits

Cite this

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title = "Monolithic RF MEMS inductor using silicon MEMS foundry process",
abstract = "A successful design of a radio frequency inductor based on a silicon microelectromechanical system foundry process is presented. The suspended inductor has been realised in electroplated thick nickel with front side bulk micromachining of the substrate. The overall size of the inductor is ~1×1 mm. The inductors have been experimentally characterised, and inductances ~2 nH in the frequency range of 200 MHz to 7 GHz have been measured with a self-resonant frequency of 9.8 GHz. The peak measured value of the Q factor is 12 at 4 GHz. After de-embedding, the Q factor reaches 13 at 4.8 GHz. Simulation based on a parameter extraction method has been carried out for the inductor. There is a good agreement between simulated and experimental results.",
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author = "L. Li and D.G. Uttamchandani",
year = "2006",
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Monolithic RF MEMS inductor using silicon MEMS foundry process. / Li, L.; Uttamchandani, D.G.

In: Micro and Nano Letters, Vol. 1, No. 1, 2006, p. 5-8.

Research output: Contribution to journalArticle

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AU - Li, L.

AU - Uttamchandani, D.G.

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AB - A successful design of a radio frequency inductor based on a silicon microelectromechanical system foundry process is presented. The suspended inductor has been realised in electroplated thick nickel with front side bulk micromachining of the substrate. The overall size of the inductor is ~1×1 mm. The inductors have been experimentally characterised, and inductances ~2 nH in the frequency range of 200 MHz to 7 GHz have been measured with a self-resonant frequency of 9.8 GHz. The peak measured value of the Q factor is 12 at 4 GHz. After de-embedding, the Q factor reaches 13 at 4.8 GHz. Simulation based on a parameter extraction method has been carried out for the inductor. There is a good agreement between simulated and experimental results.

KW - silicon

KW - elemental semiconductors

KW - micromechanical devices

KW - inductors

KW - semiconductor device models

KW - monolithic integrated circuits

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