Molecular hydrogen traps within silicon

B. Hourahine, R. Jones, S. Öberg, P. Briddon

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We present the results of first principle calculations on the behaviour of molecular hydrogen within crystalline silicon, both as an isolated species, and within defects in the material. These results are compared with recent experimental infra-red and Raman data obtained for silicon treated by either hydrogen plasma or soaked in hydrogen gas. The effect of Fermi-level position on the diffusion barrier of molecular hydrogen within silicon is also discussed.
Original languageEnglish
Pages (from-to)24-25
Number of pages2
JournalMaterials Science and Engineering B
Volume58
Issue number1
DOIs
Publication statusPublished - 12 Feb 1999

Fingerprint

Silicon
Hydrogen
traps
silicon
hydrogen
hydrogen plasma
Diffusion barriers
Fermi level
Gases
defects
Crystalline materials
Infrared radiation
Plasmas
gases
Defects

Keywords

  • silicon
  • fermi-level
  • Raman spectroscopy
  • hydrogen

Cite this

Hourahine, B. ; Jones, R. ; Öberg, S. ; Briddon, P. / Molecular hydrogen traps within silicon. In: Materials Science and Engineering B. 1999 ; Vol. 58, No. 1. pp. 24-25.
@article{9e5de3b406654137bc4c4f8499779d9f,
title = "Molecular hydrogen traps within silicon",
abstract = "We present the results of first principle calculations on the behaviour of molecular hydrogen within crystalline silicon, both as an isolated species, and within defects in the material. These results are compared with recent experimental infra-red and Raman data obtained for silicon treated by either hydrogen plasma or soaked in hydrogen gas. The effect of Fermi-level position on the diffusion barrier of molecular hydrogen within silicon is also discussed.",
keywords = "silicon, fermi-level, Raman spectroscopy, hydrogen",
author = "B. Hourahine and R. Jones and S. {\"O}berg and P. Briddon",
year = "1999",
month = "2",
day = "12",
doi = "10.1016/S0921-5107(98)00268-2",
language = "English",
volume = "58",
pages = "24--25",
journal = "Materials Science and Engineering B",
issn = "0921-5107",
number = "1",

}

Molecular hydrogen traps within silicon. / Hourahine, B.; Jones, R.; Öberg, S.; Briddon, P.

In: Materials Science and Engineering B, Vol. 58, No. 1, 12.02.1999, p. 24-25.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Molecular hydrogen traps within silicon

AU - Hourahine, B.

AU - Jones, R.

AU - Öberg, S.

AU - Briddon, P.

PY - 1999/2/12

Y1 - 1999/2/12

N2 - We present the results of first principle calculations on the behaviour of molecular hydrogen within crystalline silicon, both as an isolated species, and within defects in the material. These results are compared with recent experimental infra-red and Raman data obtained for silicon treated by either hydrogen plasma or soaked in hydrogen gas. The effect of Fermi-level position on the diffusion barrier of molecular hydrogen within silicon is also discussed.

AB - We present the results of first principle calculations on the behaviour of molecular hydrogen within crystalline silicon, both as an isolated species, and within defects in the material. These results are compared with recent experimental infra-red and Raman data obtained for silicon treated by either hydrogen plasma or soaked in hydrogen gas. The effect of Fermi-level position on the diffusion barrier of molecular hydrogen within silicon is also discussed.

KW - silicon

KW - fermi-level

KW - Raman spectroscopy

KW - hydrogen

UR - http://www.sciencedirect.com/science/journal/09215107

U2 - 10.1016/S0921-5107(98)00268-2

DO - 10.1016/S0921-5107(98)00268-2

M3 - Article

VL - 58

SP - 24

EP - 25

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

SN - 0921-5107

IS - 1

ER -