Molecular hydrogen traps within silicon

B. Hourahine, R. Jones, S. Öberg, P. Briddon

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We present the results of first principle calculations on the behaviour of molecular hydrogen within crystalline silicon, both as an isolated species, and within defects in the material. These results are compared with recent experimental infra-red and Raman data obtained for silicon treated by either hydrogen plasma or soaked in hydrogen gas. The effect of Fermi-level position on the diffusion barrier of molecular hydrogen within silicon is also discussed.
Original languageEnglish
Pages (from-to)24-25
Number of pages2
JournalMaterials Science and Engineering B
Volume58
Issue number1
DOIs
Publication statusPublished - 12 Feb 1999

Keywords

  • silicon
  • fermi-level
  • Raman spectroscopy
  • hydrogen

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