Molecular dynamics study of the interactions of incident N or Ti atoms with the TiN(001) surface

Zhenhai Xu, Quanren Zeng, Lin Yuan, Yi Qin, Mingjun Chen, Debin Shan

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Abstract

The interaction processes between incident N or Ti atoms and the TiN(001) surface are simulated by classical molecular dynamics based on the second nearest-neighbor modified embedded-atom method potentials. The simulations are carried out for substrate temperatures between 300–700 K and kinetic energies of the incident atoms within the range of 0.5–10 eV. When N atoms impact against the surface, adsorption, resputtering and reflection of particles are observed; several unique atomic mechanisms are identified to account for these interactions, in which the adsorption could occur due to the atomic exchange process while the resputtering and reflection may simultaneously occur. The impact position of incident N atoms on the surface plays an important role in determining the interaction modes. Their occurrence probabilities are dependent on the kinetic energy of incident N atoms but independent on the substrate temperature. When Ti atoms are the incident particles, adsorption is the predominant interaction mode between particles and the surface. This results in the much smaller initial sticking coefficient of N atoms on the TiN(001) surface compared with that of Ti atoms. Stoichiometric TiN is promoted by N/Ti flux ratios larger than one.
Original languageEnglish
Pages (from-to)946–952
Number of pages7
JournalApplied Surface Science
Volume360
Issue numberB
Early online date18 Nov 2015
DOIs
Publication statusPublished - 1 Jan 2016

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Keywords

  • TiN
  • atomic deposition
  • adsorption
  • resputtering
  • reflection
  • molecular dynamics

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