Molecular dynamics simulation investigation on the plastic flow behavior of silicon during nanometric cutting

Saeed Zare Chavoshi, Saurav Goel, Xichun Luo

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Abstract

Molecular dynamics (MD) simulation was carried out to acquire an in-depth understanding of the flow behaviour of single crystal silicon during nanometric cutting on three principal crystallographic planes and at different cutting temperatures. The key findings were that (i) the substrate material underneath the cutting tool was observed for the first time to experience a rotational flow akin to fluids at all the tested temperatures up to 1200 K. (ii) The degree of flow in terms of vorticity was found higher on the (1 1 1) crystal plane signifying better machinability on this orientation in accord with the current pool of knowledge (iii) an increase in the machining temperature reduces the spring-back effect and thereby the elastic recovery and (iv) the cutting orientation and the cutting temperature showed significant dependence on the location of the stagnation region in the cutting zone of the substrate.
Original languageEnglish
Article number015002
Number of pages10
JournalModelling and Simulation in Materials Science and Engineering
Volume24
Issue number1
Early online date16 Nov 2015
DOIs
Publication statusPublished - 31 Jan 2016

Keywords

  • molecular dynamics
  • material flow
  • stagnation region
  • nanometric cutting
  • single crystal silicon

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    • 1 Key-note speaker and plenary lectures at conferences

    5th Asia Pacific Conference on Optics Manufacture Conference

    Xichun Luo (Keynote/plenary speaker)
    31 Oct 2016

    Activity: Participating in or organising an event typesKey-note speaker and plenary lectures at conferences

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