Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys

S.V. Novikov, K.M. Yu, A. Levander, D. Detert, W.L. Sarney, Z. Liliental-Weber, M. Shaw, R.W. Martin, S.P. Svensson, W. Walukiewicz, C.T. Foxon

Research output: Contribution to journalArticle

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Abstract

GaN materials alloyed with group V anions form the so-called highly mismatched alloys (HMAs). Recently, the authors succeeded in growing N-rich GaNAs and GaNBi alloys over a large composition range by plasma-assisted molecular beam epitaxy (PA-MBE). Here, they present first results on PA-MBE growth and properties of N-rich GaNSb and InNAs alloys and compare these with GaNAs and GaNBi alloys. The enhanced incorporation of As and Sb was achieved by growing the layers at extremely low growth temperatures. Although layers become amorphous for high As, Sb, and Bi content, optical absorption measurements show a progressive shift of the optical absorption edge to lower energy. The large band gap range and controllable conduction and valence band positions of these HMAs make them promising materials for efficient solar energy conversion devices.
LanguageEnglish
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume31
Issue number3
DOIs
Publication statusPublished - 1 May 2013

Fingerprint

Molecular beam epitaxy
molecular beam epitaxy
Light absorption
optical absorption
Plasmas
solar energy conversion
Growth temperature
Valence bands
Conduction bands
Energy conversion
Solar energy
conduction bands
Energy gap
Negative ions
anions
valence
shift
Chemical analysis
temperature
energy

Keywords

  • molecular beam epitaxy
  • mismatched
  • N-rich GaNSb
  • InN1xAsx
  • alloys

Cite this

Novikov, S.V. ; Yu, K.M. ; Levander, A. ; Detert, D. ; Sarney, W.L. ; Liliental-Weber, Z. ; Shaw, M. ; Martin, R.W. ; Svensson, S.P. ; Walukiewicz, W. ; Foxon, C.T. / Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2013 ; Vol. 31, No. 3.
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Novikov, SV, Yu, KM, Levander, A, Detert, D, Sarney, WL, Liliental-Weber, Z, Shaw, M, Martin, RW, Svensson, SP, Walukiewicz, W & Foxon, CT 2013, 'Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 31, no. 3. https://doi.org/10.1116/1.4774028

Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys. / Novikov, S.V.; Yu, K.M.; Levander, A.; Detert, D.; Sarney, W.L.; Liliental-Weber, Z.; Shaw, M.; Martin, R.W.; Svensson, S.P.; Walukiewicz, W.; Foxon, C.T.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 31, No. 3, 01.05.2013.

Research output: Contribution to journalArticle

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AU - Yu, K.M.

AU - Levander, A.

AU - Detert, D.

AU - Sarney, W.L.

AU - Liliental-Weber, Z.

AU - Shaw, M.

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AU - Svensson, S.P.

AU - Walukiewicz, W.

AU - Foxon, C.T.

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