Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content

S.V. Novikov, K.M. Yu, A.X. Levander, Z. Liliental-Weber, R. dos Reis, A.J. Kent, A. Tseng, O.D. Dubon, J. Wu, J. Denlinger, W. Walukiewicz, Franziska Luckert, Paul Edwards, Robert Martin, C.T. Foxon

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have analysed bismuth incorporation into GaN layers using plasma-assisted molecular beam epitaxy (PA-MBE) at extremely low growth temperatures of less than ∼100 °C under both Ga-rich and N-rich growth conditions. The formation of amorphous GaN1−xBix alloys is promoted by growth under Ga-rich conditions. The amorphous matrix has a short-range order resembling random crystalline GaN1−xBix alloys. We have observed the formation of small crystalline clusters embedded into amorphous GaN1−xBix alloys. Despite the fact that the films are pseudo-amorphous we observe a well defined optical absorption edges that rapidly shift to very low energy of ∼1 eV.
LanguageEnglish
Pages419-423
Number of pages5
JournalPhysica Status Solidi A: Applications and Materials Science
Volume209
Issue number3
DOIs
Publication statusPublished - 20 Jan 2012

Fingerprint

Bismuth
Molecular beam epitaxy
bismuth
molecular beam epitaxy
plasma layers
Crystalline materials
Growth temperature
optical absorption
Light absorption
shift
matrices
Plasmas
temperature
energy

Keywords

  • semiconducting III–V materials
  • molecular beam epitaxy
  • nitrides

Cite this

Novikov, S. V., Yu, K. M., Levander, A. X., Liliental-Weber, Z., dos Reis, R., Kent, A. J., ... Foxon, C. T. (2012). Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content. Physica Status Solidi A: Applications and Materials Science, 209(3), 419-423. https://doi.org/10.1002/pssa.201100312
Novikov, S.V. ; Yu, K.M. ; Levander, A.X. ; Liliental-Weber, Z. ; dos Reis, R. ; Kent, A.J. ; Tseng, A. ; Dubon, O.D. ; Wu, J. ; Denlinger, J. ; Walukiewicz, W. ; Luckert, Franziska ; Edwards, Paul ; Martin, Robert ; Foxon, C.T. / Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content. In: Physica Status Solidi A: Applications and Materials Science. 2012 ; Vol. 209, No. 3. pp. 419-423.
@article{b127f7bad97b48efb9425f85f3eb5b09,
title = "Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content",
abstract = "We have analysed bismuth incorporation into GaN layers using plasma-assisted molecular beam epitaxy (PA-MBE) at extremely low growth temperatures of less than ∼100 °C under both Ga-rich and N-rich growth conditions. The formation of amorphous GaN1−xBix alloys is promoted by growth under Ga-rich conditions. The amorphous matrix has a short-range order resembling random crystalline GaN1−xBix alloys. We have observed the formation of small crystalline clusters embedded into amorphous GaN1−xBix alloys. Despite the fact that the films are pseudo-amorphous we observe a well defined optical absorption edges that rapidly shift to very low energy of ∼1 eV.",
keywords = "semiconducting III–V materials, molecular beam epitaxy, nitrides",
author = "S.V. Novikov and K.M. Yu and A.X. Levander and Z. Liliental-Weber and {dos Reis}, R. and A.J. Kent and A. Tseng and O.D. Dubon and J. Wu and J. Denlinger and W. Walukiewicz and Franziska Luckert and Paul Edwards and Robert Martin and C.T. Foxon",
year = "2012",
month = "1",
day = "20",
doi = "10.1002/pssa.201100312",
language = "English",
volume = "209",
pages = "419--423",
journal = "Physica Status Solidi A: Applications and Materials Science",
issn = "0031-8965",
number = "3",

}

Novikov, SV, Yu, KM, Levander, AX, Liliental-Weber, Z, dos Reis, R, Kent, AJ, Tseng, A, Dubon, OD, Wu, J, Denlinger, J, Walukiewicz, W, Luckert, F, Edwards, P, Martin, R & Foxon, CT 2012, 'Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content' Physica Status Solidi A: Applications and Materials Science, vol. 209, no. 3, pp. 419-423. https://doi.org/10.1002/pssa.201100312

Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content. / Novikov, S.V.; Yu, K.M.; Levander, A.X.; Liliental-Weber, Z.; dos Reis, R.; Kent, A.J.; Tseng, A.; Dubon, O.D.; Wu, J.; Denlinger, J.; Walukiewicz, W.; Luckert, Franziska; Edwards, Paul; Martin, Robert; Foxon, C.T.

In: Physica Status Solidi A: Applications and Materials Science, Vol. 209, No. 3, 20.01.2012, p. 419-423.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content

AU - Novikov, S.V.

AU - Yu, K.M.

AU - Levander, A.X.

AU - Liliental-Weber, Z.

AU - dos Reis, R.

AU - Kent, A.J.

AU - Tseng, A.

AU - Dubon, O.D.

AU - Wu, J.

AU - Denlinger, J.

AU - Walukiewicz, W.

AU - Luckert, Franziska

AU - Edwards, Paul

AU - Martin, Robert

AU - Foxon, C.T.

PY - 2012/1/20

Y1 - 2012/1/20

N2 - We have analysed bismuth incorporation into GaN layers using plasma-assisted molecular beam epitaxy (PA-MBE) at extremely low growth temperatures of less than ∼100 °C under both Ga-rich and N-rich growth conditions. The formation of amorphous GaN1−xBix alloys is promoted by growth under Ga-rich conditions. The amorphous matrix has a short-range order resembling random crystalline GaN1−xBix alloys. We have observed the formation of small crystalline clusters embedded into amorphous GaN1−xBix alloys. Despite the fact that the films are pseudo-amorphous we observe a well defined optical absorption edges that rapidly shift to very low energy of ∼1 eV.

AB - We have analysed bismuth incorporation into GaN layers using plasma-assisted molecular beam epitaxy (PA-MBE) at extremely low growth temperatures of less than ∼100 °C under both Ga-rich and N-rich growth conditions. The formation of amorphous GaN1−xBix alloys is promoted by growth under Ga-rich conditions. The amorphous matrix has a short-range order resembling random crystalline GaN1−xBix alloys. We have observed the formation of small crystalline clusters embedded into amorphous GaN1−xBix alloys. Despite the fact that the films are pseudo-amorphous we observe a well defined optical absorption edges that rapidly shift to very low energy of ∼1 eV.

KW - semiconducting III–V materials

KW - molecular beam epitaxy

KW - nitrides

UR - http://www.scopus.com/inward/record.url?scp=84863243738&partnerID=8YFLogxK

U2 - 10.1002/pssa.201100312

DO - 10.1002/pssa.201100312

M3 - Article

VL - 209

SP - 419

EP - 423

JO - Physica Status Solidi A: Applications and Materials Science

T2 - Physica Status Solidi A: Applications and Materials Science

JF - Physica Status Solidi A: Applications and Materials Science

SN - 0031-8965

IS - 3

ER -