Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content

S.V. Novikov, K.M. Yu, A.X. Levander, Z. Liliental-Weber, R. dos Reis, A.J. Kent, A. Tseng, O.D. Dubon, J. Wu, J. Denlinger, W. Walukiewicz, Franziska Luckert, Paul Edwards, Robert Martin, C.T. Foxon

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We have analysed bismuth incorporation into GaN layers using plasma-assisted molecular beam epitaxy (PA-MBE) at extremely low growth temperatures of less than ∼100 °C under both Ga-rich and N-rich growth conditions. The formation of amorphous GaN1−xBix alloys is promoted by growth under Ga-rich conditions. The amorphous matrix has a short-range order resembling random crystalline GaN1−xBix alloys. We have observed the formation of small crystalline clusters embedded into amorphous GaN1−xBix alloys. Despite the fact that the films are pseudo-amorphous we observe a well defined optical absorption edges that rapidly shift to very low energy of ∼1 eV.
Original languageEnglish
Pages (from-to)419-423
Number of pages5
JournalPhysica Status Solidi A: Applications and Materials Science
Issue number3
Publication statusPublished - 20 Jan 2012


  • semiconducting III–V materials
  • molecular beam epitaxy
  • nitrides

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    Novikov, S. V., Yu, K. M., Levander, A. X., Liliental-Weber, Z., dos Reis, R., Kent, A. J., Tseng, A., Dubon, O. D., Wu, J., Denlinger, J., Walukiewicz, W., Luckert, F., Edwards, P., Martin, R., & Foxon, C. T. (2012). Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content. Physica Status Solidi A: Applications and Materials Science, 209(3), 419-423.