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We have analysed bismuth incorporation into GaN layers using plasma-assisted molecular beam epitaxy (PA-MBE) at extremely low growth temperatures of less than ∼100 °C under both Ga-rich and N-rich growth conditions. The formation of amorphous GaN1−xBix alloys is promoted by growth under Ga-rich conditions. The amorphous matrix has a short-range order resembling random crystalline GaN1−xBix alloys. We have observed the formation of small crystalline clusters embedded into amorphous GaN1−xBix alloys. Despite the fact that the films are pseudo-amorphous we observe a well defined optical absorption edges that rapidly shift to very low energy of ∼1 eV.
|Number of pages||5|
|Journal||Physica Status Solidi A: Applications and Materials Science|
|Publication status||Published - 20 Jan 2012|
- semiconducting III–V materials
- molecular beam epitaxy
Novikov, S. V., Yu, K. M., Levander, A. X., Liliental-Weber, Z., dos Reis, R., Kent, A. J., Tseng, A., Dubon, O. D., Wu, J., Denlinger, J., Walukiewicz, W., Luckert, F., Edwards, P., Martin, R., & Foxon, C. T. (2012). Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content. Physica Status Solidi A: Applications and Materials Science, 209(3), 419-423. https://doi.org/10.1002/pssa.201100312