Molecular beam epitaxy of free-standing wurtzite AlxGa1xN layers

Sergei V. Novikov, C.R. Staddon, Robert Martin, A.J. Kent, C. Thomas Foxon

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Recent developments with group III nitrides present AlxGa1xN based LEDs as realistic devices for new alternative deep ultra-violet light sources. Because there is a significant difference in the lattice parameters of GaN and AlN, AlxGa1xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free-standing wurtzite AlxGa1xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE). Thick wurtzite AlxGa1xN films were grown by PA-MBE on 2-in. GaAs (111)B
substrates and were removed from the GaAs substrate after growth to provide free standing AlxGa1xN samples. X-ray microanalysis measurements confirm that the AlN fraction is uniform across the wafer and mass spectroscopy measurements show that the composition is also uniform in depth. We have demonstrated that free-standing wurtzite AlxGa1xN wafers can be achieved by PA-MBE for a wide range of AlN fractions. In order to develop a commercially viable process for the growth of wurtzite AlxGa1xN substrates, we have used
a novel Riber plasma source and have demonstrated growth rates of GaN up to 1.8 mm/h on 2-in. diameter GaAs and sapphire wafers
LanguageEnglish
Pages125
Number of pages128
JournalJournal of Crystal Growth
Volume425
DOIs
Publication statusPublished - 21 Feb 2015

Fingerprint

Molecular beam epitaxy
wurtzite
molecular beam epitaxy
Plasmas
Ultraviolet devices
wafers
Substrates
Plasma sources
Aluminum Oxide
Microanalysis
Sapphire
Nitrides
Lattice constants
Light emitting diodes
Light sources
microanalysis
Spectroscopy
ultraviolet radiation
nitrides
X rays

Keywords

  • substrates
  • molecular beam epitaxy
  • nitrides
  • semiconducting III-V materials

Cite this

Novikov, Sergei V. ; Staddon, C.R. ; Martin, Robert ; Kent, A.J. ; Foxon, C. Thomas. / Molecular beam epitaxy of free-standing wurtzite AlxGa1xN layers. In: Journal of Crystal Growth. 2015 ; Vol. 425. pp. 125.
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Molecular beam epitaxy of free-standing wurtzite AlxGa1xN layers. / Novikov, Sergei V.; Staddon, C.R.; Martin, Robert; Kent, A.J.; Foxon, C. Thomas.

In: Journal of Crystal Growth, Vol. 425, 21.02.2015, p. 125.

Research output: Contribution to journalArticle

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AU - Staddon, C.R.

AU - Martin, Robert

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