Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

Richard P Green; Jonathan McKendry; David Massoubre; Erdan Gu; Martin Dawson; Anthony E Kelly

doi:10.1063/1.4794078

Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

Richard P Green, Jonathan McKendry, David Massoubre, Erdan Gu, Martin Dawson, Anthony E Kelly

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Abstract

We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1±0.3)×10^-29 cm⁶s^-1 at 450nm and (3±1)×10^-30 cm⁶s^-1 at 520nm.

Original language	English
Article number	091103
Number of pages	4
Journal	Applied Physics Letters
Volume	102
Issue number	9
DOIs	https://doi.org/10.1063/1.4794078
Publication status	Published - 5 Mar 2013

Keywords

light emitting diodes
semiconductor device models
bandwidth measurements

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10.1063/1.4794078

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title = "Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes",

abstract = "We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1±0.3)×10-29 cm6s-1 at 450nm and (3±1)×10-30 cm6s-1 at 520nm.",

keywords = "light emitting diodes, semiconductor device models, bandwidth measurements",

author = "Green, {Richard P} and Jonathan McKendry and David Massoubre and Erdan Gu and Martin Dawson and Kelly, {Anthony E}",

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T1 - Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

AU - Green, Richard P

AU - McKendry, Jonathan

AU - Massoubre, David

AU - Gu, Erdan

AU - Dawson, Martin

AU - Kelly, Anthony E

PY - 2013/3/5

Y1 - 2013/3/5

N2 - We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1±0.3)×10-29 cm6s-1 at 450nm and (3±1)×10-30 cm6s-1 at 520nm.

AB - We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1±0.3)×10-29 cm6s-1 at 450nm and (3±1)×10-30 cm6s-1 at 520nm.

KW - light emitting diodes

KW - semiconductor device models

KW - bandwidth measurements

UR - http://link.aip.org/link/APPLAB/v102/i9/p091103/s1&Agg=doi

U2 - 10.1063/1.4794078

DO - 10.1063/1.4794078

M3 - Article

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 091103

ER -

Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

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Keywords

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