Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes

Richard P Green, Jonathan McKendry, David Massoubre, Erdan Gu, Martin Dawson, Anthony E Kelly

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Abstract

We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1±0.3)×10-29 cm6s-1 at 450nm and (3±1)×10-30 cm6s-1 at 520nm.

Original languageEnglish
Article number091103
Number of pages4
JournalApplied Physics Letters
Volume102
Issue number9
DOIs
Publication statusPublished - 5 Mar 2013

Keywords

  • light emitting diodes
  • semiconductor device models
  • bandwidth measurements

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