Modelling the realistic short circuit current and MPP power of A-SI single and multijunction devices

H.G Beyer, R. Gottschalg, T.R. Betts, D.G. Infield

Research output: Contribution to conferencePaper

5 Citations (Scopus)

Abstract

An I-V based model for amorphous silicon materials is presented that allows for the modelling of spectral effects on the performance of a-Si devices. These have been shown to be significant in colder and temperate climates. A simple model for the influence of varying spectra on the short circuit current is presented. It allows for accurate modelling of other device parameters such as MPP-power. The necessary spectral input for this model is generated by a model based on artificial neural network using the clear sky index and position of the Sun as input. The model is developed using long-term measurements taken at Loughborough and shows a good agreement for single and multi-junction devices.
LanguageEnglish
Pages2435-2438
Number of pages4
Publication statusPublished - May 2003
Event3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: 11 May 200318 May 2003

Conference

Conference3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period11/05/0318/05/03

Fingerprint

massively parallel processors
International System of Units
short circuit currents
amorphous silicon
climate
sky
sun

Keywords

  • modelling
  • realistic
  • short circuit current
  • mpp power
  • a-si
  • single
  • multi
  • junction devices
  • amorphous semiconductors
  • solar cells
  • silicon
  • short-circuit currents
  • semiconductor devices
  • semiconductor device models
  • power system simulation
  • photovoltaic power systems
  • neural nets
  • environmental factors
  • elemental semiconductors

Cite this

Beyer, H. G., Gottschalg, R., Betts, T. R., & Infield, D. G. (2003). Modelling the realistic short circuit current and MPP power of A-SI single and multijunction devices. 2435-2438. Paper presented at 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan.
Beyer, H.G ; Gottschalg, R. ; Betts, T.R. ; Infield, D.G. / Modelling the realistic short circuit current and MPP power of A-SI single and multijunction devices. Paper presented at 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan.4 p.
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Beyer, HG, Gottschalg, R, Betts, TR & Infield, DG 2003, 'Modelling the realistic short circuit current and MPP power of A-SI single and multijunction devices' Paper presented at 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11/05/03 - 18/05/03, pp. 2435-2438.

Modelling the realistic short circuit current and MPP power of A-SI single and multijunction devices. / Beyer, H.G; Gottschalg, R.; Betts, T.R.; Infield, D.G.

2003. 2435-2438 Paper presented at 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan.

Research output: Contribution to conferencePaper

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T1 - Modelling the realistic short circuit current and MPP power of A-SI single and multijunction devices

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AU - Gottschalg, R.

AU - Betts, T.R.

AU - Infield, D.G.

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N2 - An I-V based model for amorphous silicon materials is presented that allows for the modelling of spectral effects on the performance of a-Si devices. These have been shown to be significant in colder and temperate climates. A simple model for the influence of varying spectra on the short circuit current is presented. It allows for accurate modelling of other device parameters such as MPP-power. The necessary spectral input for this model is generated by a model based on artificial neural network using the clear sky index and position of the Sun as input. The model is developed using long-term measurements taken at Loughborough and shows a good agreement for single and multi-junction devices.

AB - An I-V based model for amorphous silicon materials is presented that allows for the modelling of spectral effects on the performance of a-Si devices. These have been shown to be significant in colder and temperate climates. A simple model for the influence of varying spectra on the short circuit current is presented. It allows for accurate modelling of other device parameters such as MPP-power. The necessary spectral input for this model is generated by a model based on artificial neural network using the clear sky index and position of the Sun as input. The model is developed using long-term measurements taken at Loughborough and shows a good agreement for single and multi-junction devices.

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KW - multi

KW - junction devices

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KW - solar cells

KW - silicon

KW - short-circuit currents

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KW - semiconductor device models

KW - power system simulation

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KW - neural nets

KW - environmental factors

KW - elemental semiconductors

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Beyer HG, Gottschalg R, Betts TR, Infield DG. Modelling the realistic short circuit current and MPP power of A-SI single and multijunction devices. 2003. Paper presented at 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan.