Abstract
An I-V based model for amorphous silicon materials is presented that allows for the modelling of spectral effects on the performance of a-Si devices. These have been shown to be significant in colder and temperate climates. A simple model for the influence of varying spectra on the short circuit current is presented. It allows for accurate modelling of other device parameters such as MPP-power. The necessary spectral input for this model is generated by a model based on artificial neural network using the clear sky index and position of the Sun as input. The model is developed using long-term measurements taken at Loughborough and shows a good agreement for single and multi-junction devices.
| Original language | English |
|---|---|
| Pages | 2435-2438 |
| Number of pages | 4 |
| Publication status | Published - May 2003 |
| Event | 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003 |
Conference
| Conference | 3rd World Conference on Photovoltaic Energy Conversion |
|---|---|
| Country | Japan |
| City | Osaka |
| Period | 11/05/03 → 18/05/03 |
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Keywords
- modelling
- realistic
- short circuit current
- mpp power
- a-si
- single
- multi
- junction devices
- amorphous semiconductors
- solar cells
- silicon
- short-circuit currents
- semiconductor devices
- semiconductor device models
- power system simulation
- photovoltaic power systems
- neural nets
- environmental factors
- elemental semiconductors
Cite this
Beyer, H. G., Gottschalg, R., Betts, T. R., & Infield, D. G. (2003). Modelling the realistic short circuit current and MPP power of A-SI single and multijunction devices. 2435-2438. Paper presented at 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan.