Modelling the realistic short circuit current and MPP power of A-SI single and multijunction devices

H.G Beyer, R. Gottschalg, T.R. Betts, D.G. Infield

Research output: Contribution to conferencePaper

5 Citations (Scopus)

Abstract

An I-V based model for amorphous silicon materials is presented that allows for the modelling of spectral effects on the performance of a-Si devices. These have been shown to be significant in colder and temperate climates. A simple model for the influence of varying spectra on the short circuit current is presented. It allows for accurate modelling of other device parameters such as MPP-power. The necessary spectral input for this model is generated by a model based on artificial neural network using the clear sky index and position of the Sun as input. The model is developed using long-term measurements taken at Loughborough and shows a good agreement for single and multi-junction devices.
Original languageEnglish
Pages2435-2438
Number of pages4
Publication statusPublished - May 2003
Event3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: 11 May 200318 May 2003

Conference

Conference3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period11/05/0318/05/03

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Keywords

  • modelling
  • realistic
  • short circuit current
  • mpp power
  • a-si
  • single
  • multi
  • junction devices
  • amorphous semiconductors
  • solar cells
  • silicon
  • short-circuit currents
  • semiconductor devices
  • semiconductor device models
  • power system simulation
  • photovoltaic power systems
  • neural nets
  • environmental factors
  • elemental semiconductors

Cite this

Beyer, H. G., Gottschalg, R., Betts, T. R., & Infield, D. G. (2003). Modelling the realistic short circuit current and MPP power of A-SI single and multijunction devices. 2435-2438. Paper presented at 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan.