Abstract
| Language | English |
|---|---|
| Pages | 2435-2438 |
| Number of pages | 4 |
| Publication status | Published - May 2003 |
| Event | 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003 |
Conference
| Conference | 3rd World Conference on Photovoltaic Energy Conversion |
|---|---|
| Country | Japan |
| City | Osaka |
| Period | 11/05/03 → 18/05/03 |
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Keywords
- modelling
- realistic
- short circuit current
- mpp power
- a-si
- single
- multi
- junction devices
- amorphous semiconductors
- solar cells
- silicon
- short-circuit currents
- semiconductor devices
- semiconductor device models
- power system simulation
- photovoltaic power systems
- neural nets
- environmental factors
- elemental semiconductors
Cite this
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Modelling the realistic short circuit current and MPP power of A-SI single and multijunction devices. / Beyer, H.G; Gottschalg, R.; Betts, T.R.; Infield, D.G.
2003. 2435-2438 Paper presented at 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan.Research output: Contribution to conference › Paper
TY - CONF
T1 - Modelling the realistic short circuit current and MPP power of A-SI single and multijunction devices
AU - Beyer, H.G
AU - Gottschalg, R.
AU - Betts, T.R.
AU - Infield, D.G.
PY - 2003/5
Y1 - 2003/5
N2 - An I-V based model for amorphous silicon materials is presented that allows for the modelling of spectral effects on the performance of a-Si devices. These have been shown to be significant in colder and temperate climates. A simple model for the influence of varying spectra on the short circuit current is presented. It allows for accurate modelling of other device parameters such as MPP-power. The necessary spectral input for this model is generated by a model based on artificial neural network using the clear sky index and position of the Sun as input. The model is developed using long-term measurements taken at Loughborough and shows a good agreement for single and multi-junction devices.
AB - An I-V based model for amorphous silicon materials is presented that allows for the modelling of spectral effects on the performance of a-Si devices. These have been shown to be significant in colder and temperate climates. A simple model for the influence of varying spectra on the short circuit current is presented. It allows for accurate modelling of other device parameters such as MPP-power. The necessary spectral input for this model is generated by a model based on artificial neural network using the clear sky index and position of the Sun as input. The model is developed using long-term measurements taken at Loughborough and shows a good agreement for single and multi-junction devices.
KW - modelling
KW - realistic
KW - short circuit current
KW - mpp power
KW - a-si
KW - single
KW - multi
KW - junction devices
KW - amorphous semiconductors
KW - solar cells
KW - silicon
KW - short-circuit currents
KW - semiconductor devices
KW - semiconductor device models
KW - power system simulation
KW - photovoltaic power systems
KW - neural nets
KW - environmental factors
KW - elemental semiconductors
M3 - Paper
SP - 2435
EP - 2438
ER -