Modelling spectral irradiation effects on single and multi-junction amorphous silicon photovoltaic devices

T.R. Betts, R. Gottschalg, D.G. Infield

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

It has been previously reported that variations in the spectral irradiance under which an amorphous silicon device operates can have a significant effect on its electrical performance, often contributing to enhanced system yields compared to crystalline-based systems.
In this work, spectral irradiance data based on models and measurements taken at the Centre for Renewable Energy Systems Technology (CREST) in the UK are presented. These are input into electrical models for amorphous silicon devices incorporating different number of junctions in order to investigate the impact of changing spectral irradiation. The results can be classified broadly as primary effects, those accounting for the available spectrally useful irradiance and secondary effects that consider the effects of mismatched currents in the stacked cells of multi-junction devices. The modeled short circuit currents correlate well with measurements and are demonstrated as a useful tool for further investigation.
LanguageEnglish
Pages1242-1245
Number of pages4
DOIs
Publication statusPublished - May 2002
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, United States
Duration: 19 May 200224 May 2002

Conference

Conference29th IEEE Photovoltaic Specialists Conference
CountryUnited States
CityNew Orleans
Period19/05/0224/05/02

Fingerprint

amorphous silicon
irradiance
irradiation
renewable energy
short circuit currents
cells

Keywords

  • modelling
  • spectral irradiation effects
  • single
  • multi
  • junction
  • amorphous
  • silicon photovoltaic devices
  • amorphous silicon
  • temperature sensors
  • solar power generation
  • silicon devices
  • short circuit currents
  • renewable energy resources
  • photovoltaic systems
  • photonic band gap
  • energy measurement
  • crystallization

Cite this

Betts, T. R., Gottschalg, R., & Infield, D. G. (2002). Modelling spectral irradiation effects on single and multi-junction amorphous silicon photovoltaic devices. 1242-1245. Paper presented at 29th IEEE Photovoltaic Specialists Conference , New Orleans, United States. https://doi.org/10.1109/PVSC.2002.1190833
Betts, T.R. ; Gottschalg, R. ; Infield, D.G. / Modelling spectral irradiation effects on single and multi-junction amorphous silicon photovoltaic devices. Paper presented at 29th IEEE Photovoltaic Specialists Conference , New Orleans, United States.4 p.
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Betts, TR, Gottschalg, R & Infield, DG 2002, 'Modelling spectral irradiation effects on single and multi-junction amorphous silicon photovoltaic devices' Paper presented at 29th IEEE Photovoltaic Specialists Conference , New Orleans, United States, 19/05/02 - 24/05/02, pp. 1242-1245. https://doi.org/10.1109/PVSC.2002.1190833

Modelling spectral irradiation effects on single and multi-junction amorphous silicon photovoltaic devices. / Betts, T.R.; Gottschalg, R.; Infield, D.G.

2002. 1242-1245 Paper presented at 29th IEEE Photovoltaic Specialists Conference , New Orleans, United States.

Research output: Contribution to conferencePaper

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AU - Infield, D.G.

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N2 - It has been previously reported that variations in the spectral irradiance under which an amorphous silicon device operates can have a significant effect on its electrical performance, often contributing to enhanced system yields compared to crystalline-based systems. In this work, spectral irradiance data based on models and measurements taken at the Centre for Renewable Energy Systems Technology (CREST) in the UK are presented. These are input into electrical models for amorphous silicon devices incorporating different number of junctions in order to investigate the impact of changing spectral irradiation. The results can be classified broadly as primary effects, those accounting for the available spectrally useful irradiance and secondary effects that consider the effects of mismatched currents in the stacked cells of multi-junction devices. The modeled short circuit currents correlate well with measurements and are demonstrated as a useful tool for further investigation.

AB - It has been previously reported that variations in the spectral irradiance under which an amorphous silicon device operates can have a significant effect on its electrical performance, often contributing to enhanced system yields compared to crystalline-based systems. In this work, spectral irradiance data based on models and measurements taken at the Centre for Renewable Energy Systems Technology (CREST) in the UK are presented. These are input into electrical models for amorphous silicon devices incorporating different number of junctions in order to investigate the impact of changing spectral irradiation. The results can be classified broadly as primary effects, those accounting for the available spectrally useful irradiance and secondary effects that consider the effects of mismatched currents in the stacked cells of multi-junction devices. The modeled short circuit currents correlate well with measurements and are demonstrated as a useful tool for further investigation.

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KW - solar power generation

KW - silicon devices

KW - short circuit currents

KW - renewable energy resources

KW - photovoltaic systems

KW - photonic band gap

KW - energy measurement

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Betts TR, Gottschalg R, Infield DG. Modelling spectral irradiation effects on single and multi-junction amorphous silicon photovoltaic devices. 2002. Paper presented at 29th IEEE Photovoltaic Specialists Conference , New Orleans, United States. https://doi.org/10.1109/PVSC.2002.1190833