Modelling shading on amorphous silicon single and double junction modules

A. Johansson, R. Gottschalg, D.G. Infield

Research output: Contribution to conferencePaper

15 Citations (Scopus)

Abstract

The effect of shading amorphous silicon mini-modules is investigated by means of measurements and simulation. Several devices are measured under varying degrees of shading and the reverse bias behaviour is investigated, including the reverse breakdown voltage. A simulation using a modified single diode model for amorphous silicon is presented, in which the Bishop extension of the shunt resistance is used to simulate the behaviour of shaded devices. The differences between the effect of shading on amorphous silicon and on crystalline silicon devices are investigated based on measurements and simulations. It is shown that the thin film cells do not develop hot spots in the same manner as crystalline silicon devices; they always break down at the interconnection to the adjacent cell.
Original languageEnglish
Pages1934-1937
Number of pages4
Publication statusPublished - May 2003
Event3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: 11 May 200318 May 2003

Conference

Conference3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period11/05/0318/05/03

Keywords

  • modelling
  • shading
  • amorphous silicon
  • single
  • double
  • junction modules
  • amorphous semiconductors
  • solar cells
  • silicon
  • semiconductor thin films
  • semiconductor device models
  • semiconductor device breakdown
  • elemental semiconductors

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