Modelling shading on amorphous silicon single and double junction modules

A. Johansson, R. Gottschalg, D.G. Infield

Research output: Contribution to conferencePaper

15 Citations (Scopus)

Abstract

The effect of shading amorphous silicon mini-modules is investigated by means of measurements and simulation. Several devices are measured under varying degrees of shading and the reverse bias behaviour is investigated, including the reverse breakdown voltage. A simulation using a modified single diode model for amorphous silicon is presented, in which the Bishop extension of the shunt resistance is used to simulate the behaviour of shaded devices. The differences between the effect of shading on amorphous silicon and on crystalline silicon devices are investigated based on measurements and simulations. It is shown that the thin film cells do not develop hot spots in the same manner as crystalline silicon devices; they always break down at the interconnection to the adjacent cell.
LanguageEnglish
Pages1934-1937
Number of pages4
Publication statusPublished - May 2003
Event3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: 11 May 200318 May 2003

Conference

Conference3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period11/05/0318/05/03

Fingerprint

amorphous silicon
modules
simulation
shunts
silicon
cells
electrical faults
breakdown
diodes
thin films

Keywords

  • modelling
  • shading
  • amorphous silicon
  • single
  • double
  • junction modules
  • amorphous semiconductors
  • solar cells
  • silicon
  • semiconductor thin films
  • semiconductor device models
  • semiconductor device breakdown
  • elemental semiconductors

Cite this

Johansson, A., Gottschalg, R., & Infield, D. G. (2003). Modelling shading on amorphous silicon single and double junction modules. 1934-1937. Paper presented at 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan.
Johansson, A. ; Gottschalg, R. ; Infield, D.G. / Modelling shading on amorphous silicon single and double junction modules. Paper presented at 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan.4 p.
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keywords = "modelling, shading, amorphous silicon , single, double, junction modules, amorphous semiconductors, solar cells , silicon, semiconductor thin films, semiconductor device models, semiconductor device breakdown, elemental semiconductors",
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Johansson, A, Gottschalg, R & Infield, DG 2003, 'Modelling shading on amorphous silicon single and double junction modules' Paper presented at 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11/05/03 - 18/05/03, pp. 1934-1937.

Modelling shading on amorphous silicon single and double junction modules. / Johansson, A.; Gottschalg, R.; Infield, D.G.

2003. 1934-1937 Paper presented at 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Modelling shading on amorphous silicon single and double junction modules

AU - Johansson, A.

AU - Gottschalg, R.

AU - Infield, D.G.

PY - 2003/5

Y1 - 2003/5

N2 - The effect of shading amorphous silicon mini-modules is investigated by means of measurements and simulation. Several devices are measured under varying degrees of shading and the reverse bias behaviour is investigated, including the reverse breakdown voltage. A simulation using a modified single diode model for amorphous silicon is presented, in which the Bishop extension of the shunt resistance is used to simulate the behaviour of shaded devices. The differences between the effect of shading on amorphous silicon and on crystalline silicon devices are investigated based on measurements and simulations. It is shown that the thin film cells do not develop hot spots in the same manner as crystalline silicon devices; they always break down at the interconnection to the adjacent cell.

AB - The effect of shading amorphous silicon mini-modules is investigated by means of measurements and simulation. Several devices are measured under varying degrees of shading and the reverse bias behaviour is investigated, including the reverse breakdown voltage. A simulation using a modified single diode model for amorphous silicon is presented, in which the Bishop extension of the shunt resistance is used to simulate the behaviour of shaded devices. The differences between the effect of shading on amorphous silicon and on crystalline silicon devices are investigated based on measurements and simulations. It is shown that the thin film cells do not develop hot spots in the same manner as crystalline silicon devices; they always break down at the interconnection to the adjacent cell.

KW - modelling

KW - shading

KW - amorphous silicon

KW - single

KW - double

KW - junction modules

KW - amorphous semiconductors

KW - solar cells

KW - silicon

KW - semiconductor thin films

KW - semiconductor device models

KW - semiconductor device breakdown

KW - elemental semiconductors

M3 - Paper

SP - 1934

EP - 1937

ER -

Johansson A, Gottschalg R, Infield DG. Modelling shading on amorphous silicon single and double junction modules. 2003. Paper presented at 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan.