Modelling and experimental analysis of InGaN mOVPE in the aixtron aIX 200/4 rF-S horizontal reactor

E.V. Yakovlev; R.A. Talalaev; R.W. Martin; N. Peng; C. Jeynes; C.J. Deatcher; I.M. Watson

doi:10.1002/pssc.200565182

Modelling and experimental analysis of InGaN mOVPE in the aixtron aIX 200/4 rF-S horizontal reactor

E.V. Yakovlev, R.A. Talalaev, R.W. Martin, N. Peng, C. Jeynes, C.J. Deatcher, I.M. Watson

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A combined modeling and experimental analysis of InGaN deposition in the widely used single-wafer Aixtron AIX 200/4 RF-S reactor is presented. The main focus of the study is the effect of the deposition temperature on the layer composition. InGaN epilayers were grown at setpoint temperatures between 760 and 920 °C, keeping other process parameters constant. Epilayer compositions were analysed using strainindependent methods. Results from the modeling generally match the experimental compositional data well, and thus are used to analyze factors affecting indium transport and incorporation efficiency.

Original language	English
Pages (from-to)	1620-1623
Number of pages	4
Journal	Physica Status Solidi C
Volume	3
Issue number	6
Early online date	10 May 2006
DOIs	https://doi.org/10.1002/pssc.200565182
Publication status	Published - 1 Jun 2006

Keywords

inGaN
MOVPE

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10.1002/pssc.200565182

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title = "Modelling and experimental analysis of InGaN mOVPE in the aixtron aIX 200/4 rF-S horizontal reactor",

abstract = "A combined modeling and experimental analysis of InGaN deposition in the widely used single-wafer Aixtron AIX 200/4 RF-S reactor is presented. The main focus of the study is the effect of the deposition temperature on the layer composition. InGaN epilayers were grown at setpoint temperatures between 760 and 920 °C, keeping other process parameters constant. Epilayer compositions were analysed using strainindependent methods. Results from the modeling generally match the experimental compositional data well, and thus are used to analyze factors affecting indium transport and incorporation efficiency.",

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T1 - Modelling and experimental analysis of InGaN mOVPE in the aixtron aIX 200/4 rF-S horizontal reactor

AU - Yakovlev, E.V.

AU - Talalaev, R.A.

AU - Martin, R.W.

AU - Peng, N.

AU - Jeynes, C.

AU - Deatcher, C.J.

AU - Watson, I.M.

PY - 2006/6/1

Y1 - 2006/6/1

N2 - A combined modeling and experimental analysis of InGaN deposition in the widely used single-wafer Aixtron AIX 200/4 RF-S reactor is presented. The main focus of the study is the effect of the deposition temperature on the layer composition. InGaN epilayers were grown at setpoint temperatures between 760 and 920 °C, keeping other process parameters constant. Epilayer compositions were analysed using strainindependent methods. Results from the modeling generally match the experimental compositional data well, and thus are used to analyze factors affecting indium transport and incorporation efficiency.

AB - A combined modeling and experimental analysis of InGaN deposition in the widely used single-wafer Aixtron AIX 200/4 RF-S reactor is presented. The main focus of the study is the effect of the deposition temperature on the layer composition. InGaN epilayers were grown at setpoint temperatures between 760 and 920 °C, keeping other process parameters constant. Epilayer compositions were analysed using strainindependent methods. Results from the modeling generally match the experimental compositional data well, and thus are used to analyze factors affecting indium transport and incorporation efficiency.

KW - inGaN

KW - MOVPE

UR - http://onlinelibrary.wiley.com/doi/10.1002/pssc.200565182/abstract

U2 - 10.1002/pssc.200565182

DO - 10.1002/pssc.200565182

M3 - Article

SN - 1862-6351

VL - 3

SP - 1620

EP - 1623

JO - Physica Status Solidi C

JF - Physica Status Solidi C

IS - 6

ER -

Modelling and experimental analysis of InGaN mOVPE in the aixtron aIX 200/4 rF-S horizontal reactor

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Keywords

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