MOCVD growth and characterisation of ZnS/ZnSe distributed Bragg reflectors and ZnCdSe/ZnSe heterostructures for green VCSEL

P I  Kuznetsov; B S  Shchamkhalova; V A  Jitov; G G  Yakushcheva; V I  Kozlovsky; K P  O'Donnell; C  Trager-Cowan; P R  Edwards

MOCVD growth and characterisation of ZnS/ZnSe distributed Bragg reflectors and ZnCdSe/ZnSe heterostructures for green VCSEL

P I Kuznetsov, B S Shchamkhalova, V A Jitov, G G Yakushcheva, V I Kozlovsky, K P O'Donnell, C Trager-Cowan, P R Edwards

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

High reflectivity ZnS/ZnSe distributed Bragg reflectors (DBR) have been grown on GaAs(100) substrates using metallorganic chemical vapour deposition technique. It was found that the surface roughness, which limits the ZnS/ZnSe DBR mirror reflectivity, may be reduced using the interruption of chalcogen-contained flow before each successive layer growth. The DBR mirrors have been obtained with reflectivity as high as 99% and 94% at the wavelengths of 478 nm and 520 nm, respectively. The ZnCdSe/ZnSe QW structure grown on the ZnS/ZnSe DBR mirror manifests cathodoluminescence at room temperature whose intensity is an order of magnitude less than that of the similar structure grown on ZnSe buffer. Large lattice mismatch between ZnS and ZnSe layers results in high density of defects in ZnCdSe/ZnSe QW structures grown on. the DBR.

Original language	English
Pages (from-to)	271-278
Number of pages	8
Journal	Physics of Low-Dimensional Structures
Volume	11
Issue number	2
Publication status	Published - 2001

Keywords

Bragg reflectors
surface emitting laser

Cite this

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title = "MOCVD growth and characterisation of ZnS/ZnSe distributed Bragg reflectors and ZnCdSe/ZnSe heterostructures for green VCSEL",

abstract = "High reflectivity ZnS/ZnSe distributed Bragg reflectors (DBR) have been grown on GaAs(100) substrates using metallorganic chemical vapour deposition technique. It was found that the surface roughness, which limits the ZnS/ZnSe DBR mirror reflectivity, may be reduced using the interruption of chalcogen-contained flow before each successive layer growth. The DBR mirrors have been obtained with reflectivity as high as 99% and 94% at the wavelengths of 478 nm and 520 nm, respectively. The ZnCdSe/ZnSe QW structure grown on the ZnS/ZnSe DBR mirror manifests cathodoluminescence at room temperature whose intensity is an order of magnitude less than that of the similar structure grown on ZnSe buffer. Large lattice mismatch between ZnS and ZnSe layers results in high density of defects in ZnCdSe/ZnSe QW structures grown on. the DBR.",

keywords = "Bragg reflectors, surface emitting laser",

author = "Kuznetsov, {P I} and Shchamkhalova, {B S} and Jitov, {V A} and Yakushcheva, {G G} and Kozlovsky, {V I} and O'Donnell, {K P} and C Trager-Cowan and Edwards, {P R}",

year = "2001",

language = "English",

volume = "11",

pages = "271--278",

journal = "Physics of Low-Dimensional Structures",

issn = "0204-3467",

publisher = "VSV Co Ltd",

number = "2",

}

TY - JOUR

T1 - MOCVD growth and characterisation of ZnS/ZnSe distributed Bragg reflectors and ZnCdSe/ZnSe heterostructures for green VCSEL

AU - Kuznetsov, P I

AU - Shchamkhalova, B S

AU - Jitov, V A

AU - Yakushcheva, G G

AU - Kozlovsky, V I

AU - O'Donnell, K P

AU - Trager-Cowan, C

AU - Edwards, P R

PY - 2001

Y1 - 2001

N2 - High reflectivity ZnS/ZnSe distributed Bragg reflectors (DBR) have been grown on GaAs(100) substrates using metallorganic chemical vapour deposition technique. It was found that the surface roughness, which limits the ZnS/ZnSe DBR mirror reflectivity, may be reduced using the interruption of chalcogen-contained flow before each successive layer growth. The DBR mirrors have been obtained with reflectivity as high as 99% and 94% at the wavelengths of 478 nm and 520 nm, respectively. The ZnCdSe/ZnSe QW structure grown on the ZnS/ZnSe DBR mirror manifests cathodoluminescence at room temperature whose intensity is an order of magnitude less than that of the similar structure grown on ZnSe buffer. Large lattice mismatch between ZnS and ZnSe layers results in high density of defects in ZnCdSe/ZnSe QW structures grown on. the DBR.

AB - High reflectivity ZnS/ZnSe distributed Bragg reflectors (DBR) have been grown on GaAs(100) substrates using metallorganic chemical vapour deposition technique. It was found that the surface roughness, which limits the ZnS/ZnSe DBR mirror reflectivity, may be reduced using the interruption of chalcogen-contained flow before each successive layer growth. The DBR mirrors have been obtained with reflectivity as high as 99% and 94% at the wavelengths of 478 nm and 520 nm, respectively. The ZnCdSe/ZnSe QW structure grown on the ZnS/ZnSe DBR mirror manifests cathodoluminescence at room temperature whose intensity is an order of magnitude less than that of the similar structure grown on ZnSe buffer. Large lattice mismatch between ZnS and ZnSe layers results in high density of defects in ZnCdSe/ZnSe QW structures grown on. the DBR.

KW - Bragg reflectors

KW - surface emitting laser

UR - http://journalseek.net/cgi-bin/journalseek/journalsearch.cgi?field=issn&query=0204-3467

M3 - Article

SN - 0204-3467

VL - 11

SP - 271

EP - 278

JO - Physics of Low-Dimensional Structures

JF - Physics of Low-Dimensional Structures

IS - 2

ER -

MOCVD growth and characterisation of ZnS/ZnSe distributed Bragg reflectors and ZnCdSe/ZnSe heterostructures for green VCSEL

Abstract

Keywords

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