Microwave driven arbitrary coupling between trapped charge resonances in a silicon single electron transistor

M. Erfani, D.G. Hasko, A. Rossi, W. Sik Cho, J.-B. Choi

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Abstract

We report controllable coupling between coherent excitations in a silicon transistor, which is useful for double-qubit gate operation. Coupling interactions may be directed by adjusting the gate voltage in a semiconductor device or by an additional flux in a superconducting device. Here, we demonstrate an alternative approach to coupling by exploiting the nonlinear behavior of the silicon transistor. Microwave spectroscopy on a DC-biased transistor has previously been found to indicate the presence of coherent oscillating electrons. We couple two such resonances by using triple-frequency spectroscopy, where the third frequency corresponds to the frequency difference between the two on-resonance frequencies. © 2011 American Institute of Physics.

Original languageEnglish
Article number192108
Number of pages3
JournalApplied Physics Letters
Volume99
Issue number19
DOIs
Publication statusPublished - 7 Nov 2011

Keywords

  • single electron transistors
  • microwave spectroscopy
  • resonance
  • transistors

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