Microwave-assisted transport via localized states in degenerately doped Si single electron transistors

A. Rossi, D. G. Hasko

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Resonant microwave-assisted and dc transport are investigated in degenerately doped silicon single electron transistors. A model based on hopping via localized impurity states is developed and first used to explain both the dc temperature dependence and the ac response. In particular, the non-monotonic power dependence of the resonant current under irradiation is proved to be consistent with spatial Rabi oscillations between these localized states. © 2010 American Institute of Physics.

Original languageEnglish
Article number034509
Number of pages8
JournalJournal of Applied Physics
Volume108
Issue number3
DOIs
Publication statusPublished - 1 Aug 2010

Keywords

  • DC power transmission
  • single electron transistors
  • ac response
  • doped silicon

Fingerprint Dive into the research topics of 'Microwave-assisted transport via localized states in degenerately doped Si single electron transistors'. Together they form a unique fingerprint.

  • Cite this