Microwave-assisted transport via localized states in degenerately doped Si single electron transistors

A. Rossi, D. G. Hasko

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Resonant microwave-assisted and dc transport are investigated in degenerately doped silicon single electron transistors. A model based on hopping via localized impurity states is developed and first used to explain both the dc temperature dependence and the ac response. In particular, the non-monotonic power dependence of the resonant current under irradiation is proved to be consistent with spatial Rabi oscillations between these localized states. © 2010 American Institute of Physics.

LanguageEnglish
Article number034509
Number of pages8
JournalJournal of Applied Physics
Volume108
Issue number3
DOIs
Publication statusPublished - 1 Aug 2010

Fingerprint

silicon transistors
single electron transistors
microwaves
impurities
temperature dependence
oscillations
irradiation

Keywords

  • DC power transmission
  • single electron transistors
  • ac response
  • doped silicon

Cite this

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Microwave-assisted transport via localized states in degenerately doped Si single electron transistors. / Rossi, A.; Hasko, D. G.

In: Journal of Applied Physics, Vol. 108, No. 3, 034509, 01.08.2010.

Research output: Contribution to journalArticle

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AU - Hasko, D. G.

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KW - DC power transmission

KW - single electron transistors

KW - ac response

KW - doped silicon

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