Microwave-assisted transport via localized states in degenerately doped Si single electron transistors

A. Rossi, D. G. Hasko

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12 Citations (Scopus)


Resonant microwave-assisted and dc transport are investigated in degenerately doped silicon single electron transistors. A model based on hopping via localized impurity states is developed and first used to explain both the dc temperature dependence and the ac response. In particular, the non-monotonic power dependence of the resonant current under irradiation is proved to be consistent with spatial Rabi oscillations between these localized states. © 2010 American Institute of Physics.

Original languageEnglish
Article number034509
Number of pages8
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - 1 Aug 2010


  • DC power transmission
  • single electron transistors
  • ac response
  • doped silicon

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