Microstructure fabrication in gallium nitride, silicon carbide and diamond

E. Gu, H.W. Choi, C.W. Jeon, G.B. Rice, C. Liu, I.M. Watson, M.D. Dawson, P.R. Edwards, R.W. Martin

Research output: Contribution to conferencePaper

Abstract

This paper is about Microstructure fabrication in gallium nitride, silicon carbide and diamond. It was presented at the Institute of Physics Day Meeting on "Wide bandgap semiconductor technology" in 2003.
Original languageEnglish
Publication statusUnpublished - 17 Sep 2003
EventWide Bandgap Semiconductor Technology: Institute of Physics Day Meeting - London, United Kingdom
Duration: 17 Sep 2003 → …

Conference

ConferenceWide Bandgap Semiconductor Technology: Institute of Physics Day Meeting
CityLondon, United Kingdom
Period17/09/03 → …

Keywords

  • microstructure fabrication
  • gallium nitride
  • silicon carbide
  • diamond

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