Microstructure fabrication in gallium nitride, silicon carbide and diamond

E. Gu; H.W. Choi; C.W. Jeon; G.B. Rice; C. Liu; I.M. Watson; M.D. Dawson; P.R. Edwards; R.W. Martin

Microstructure fabrication in gallium nitride, silicon carbide and diamond

E. Gu, H.W. Choi, C.W. Jeon, G.B. Rice, C. Liu, I.M. Watson, M.D. Dawson, P.R. Edwards, R.W. Martin

Research output: Contribution to conference › Paper

Abstract

This paper is about Microstructure fabrication in gallium nitride, silicon carbide and diamond. It was presented at the Institute of Physics Day Meeting on "Wide bandgap semiconductor technology" in 2003.

Original language	English
Publication status	Unpublished - 17 Sep 2003
Event	Wide Bandgap Semiconductor Technology: Institute of Physics Day Meeting - London, United Kingdom Duration: 17 Sep 2003 → …

Conference

Conference	Wide Bandgap Semiconductor Technology: Institute of Physics Day Meeting
City	London, United Kingdom
Period	17/09/03 → …

Keywords

microstructure fabrication
gallium nitride
silicon carbide
diamond

Cite this

@conference{fdea080e86c34ab09f810de4d01963b8,

title = "Microstructure fabrication in gallium nitride, silicon carbide and diamond",

abstract = "This paper is about Microstructure fabrication in gallium nitride, silicon carbide and diamond. It was presented at the Institute of Physics Day Meeting on {"}Wide bandgap semiconductor technology{"} in 2003.",

keywords = "microstructure fabrication, gallium nitride, silicon carbide, diamond",

author = "E. Gu and H.W. Choi and C.W. Jeon and G.B. Rice and C. Liu and I.M. Watson and M.D. Dawson and P.R. Edwards and R.W. Martin",

note = "AHR; Wide Bandgap Semiconductor Technology: Institute of Physics Day Meeting ; Conference date: 17-09-2003",

year = "2003",

month = sep,

day = "17",

language = "English",

}

TY - CONF

T1 - Microstructure fabrication in gallium nitride, silicon carbide and diamond

AU - Gu, E.

AU - Choi, H.W.

AU - Jeon, C.W.

AU - Rice, G.B.

AU - Liu, C.

AU - Watson, I.M.

AU - Dawson, M.D.

AU - Edwards, P.R.

AU - Martin, R.W.

N1 - AHR

PY - 2003/9/17

Y1 - 2003/9/17

N2 - This paper is about Microstructure fabrication in gallium nitride, silicon carbide and diamond. It was presented at the Institute of Physics Day Meeting on "Wide bandgap semiconductor technology" in 2003.

AB - This paper is about Microstructure fabrication in gallium nitride, silicon carbide and diamond. It was presented at the Institute of Physics Day Meeting on "Wide bandgap semiconductor technology" in 2003.

KW - microstructure fabrication

KW - gallium nitride

KW - silicon carbide

KW - diamond

M3 - Paper

T2 - Wide Bandgap Semiconductor Technology: Institute of Physics Day Meeting

Y2 - 17 September 2003

ER -

Microstructure fabrication in gallium nitride, silicon carbide and diamond

Abstract

Conference

Keywords

Fingerprint

Cite this