Microstripe-array InGaN light-emitting diodes with individually addressable elements

H.X. Zhang, E. Gu, C.W. Jeon, Z. Gong, M.D. Dawson, M.A.A. Neil, P.M.W. French

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

High-performance InGaN light-emitting diodes consisting of 120 side-by-side and individually addressable microstripe elements have been successfully fabricated. Each stripe in these devices is 24 pm in width and 3600 mu m long, with a center-to-center spacing between adjacent stripes of 34 mu m. The emission wavelengths demonstrated range from ultraviolet (UV) (370 nm) to blue (470 nm) and green (520 nm). The devices show good uniformity and performance due to finger-pattern n-electrodes running between adjacent stripes. In the case of the UV devices for example, turn-on voltages are around 3.5 V and continuous-wave output powers per stripe similar to 80 mu W at 20 mA. A major feature of these devices is their ability to generate pattern-programmable emission, which offers applications in areas including structured illumination wide-field sectioning optical microscopy.
LanguageEnglish
Pages1681-1683
Number of pages2
JournalIEEE Photonics Technology Letters
Volume18
Issue number15
DOIs
Publication statusPublished - Aug 2006

Fingerprint

Ultraviolet devices
Optical microscopy
Light emitting diodes
light emitting diodes
Lighting
Wavelength
Electrodes
Electric potential
continuous radiation
illumination
spacing
microscopy
electrodes
output
electric potential
wavelengths

Keywords

  • inGaN
  • light-emitting diode (LED)
  • micropixellated light-emitting diode (LED)

Cite this

Zhang, H.X. ; Gu, E. ; Jeon, C.W. ; Gong, Z. ; Dawson, M.D. ; Neil, M.A.A. ; French, P.M.W. / Microstripe-array InGaN light-emitting diodes with individually addressable elements. In: IEEE Photonics Technology Letters. 2006 ; Vol. 18, No. 15. pp. 1681-1683.
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abstract = "High-performance InGaN light-emitting diodes consisting of 120 side-by-side and individually addressable microstripe elements have been successfully fabricated. Each stripe in these devices is 24 pm in width and 3600 mu m long, with a center-to-center spacing between adjacent stripes of 34 mu m. The emission wavelengths demonstrated range from ultraviolet (UV) (370 nm) to blue (470 nm) and green (520 nm). The devices show good uniformity and performance due to finger-pattern n-electrodes running between adjacent stripes. In the case of the UV devices for example, turn-on voltages are around 3.5 V and continuous-wave output powers per stripe similar to 80 mu W at 20 mA. A major feature of these devices is their ability to generate pattern-programmable emission, which offers applications in areas including structured illumination wide-field sectioning optical microscopy.",
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Microstripe-array InGaN light-emitting diodes with individually addressable elements. / Zhang, H.X.; Gu, E.; Jeon, C.W.; Gong, Z.; Dawson, M.D.; Neil, M.A.A.; French, P.M.W.

In: IEEE Photonics Technology Letters, Vol. 18, No. 15, 08.2006, p. 1681-1683.

Research output: Contribution to journalArticle

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