Microscopy of defects in semiconductors

Research output: Chapter in Book/Report/Conference proceedingChapter (peer-reviewed)peer-review

4 Citations (Scopus)
56 Downloads (Pure)


In this chapter, the authors discuss microscopy techniques that can be useful in addressing defects in semiconductors. They focus on three main families: scanning probe microscopy, scanning electron microscopy and transmission electron microscopy. They first address the basic principles of the selected microscopy techniques In discussions of image formation, they elucidate the mechanisms by which defects are typically imaged in each technique. Then, in the latter part of the chapter, they describe some key examples of the application of microscopy to semiconductor materials, addressing both point and extended defects and both two-dimensional (2D) and three-dimensional (3D) materials.
Original languageEnglish
Title of host publicationCharacaterisation and Control of Defects in Semiconductors
EditorsFilip Tuomisto
Place of Publication[S.I.]
Publication statusPublished - 30 Sept 2019

Publication series

NameMaterials, Circuits and Devices


  • microscopy
  • cathodoluminescence
  • atomic force microscopy
  • image formation
  • point defects
  • scanning electron microscopy


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