Microscopy of defects in semiconductors

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Abstract

In this chapter, the authors discuss microscopy techniques that can be useful in addressing defects in semiconductors. They focus on three main families: scanning probe microscopy, scanning electron microscopy and transmission electron microscopy. They first address the basic principles of the selected microscopy techniques In discussions of image formation, they elucidate the mechanisms by which defects are typically imaged in each technique. Then, in the latter part of the chapter, they describe some key examples of the application of microscopy to semiconductor materials, addressing both point and extended defects and both two-dimensional (2D) and three-dimensional (3D) materials.
Original languageEnglish
Title of host publicationCharacaterisation and Control of Defects in Semiconductors
EditorsFilip Tuomisto
Place of Publication[S.I.]
Chapter8
DOIs
Publication statusPublished - 30 Sep 2019

Publication series

NameMaterials, Circuits and Devices

Keywords

  • microscopy
  • cathodoluminescence
  • atomic force microscopy
  • image formation
  • point defects
  • scanning electron microscopy

Cite this

Massabuau, F. C. -P., Bruckbauer, J., Trager-Cowan, C., & Oliver, R. A. (2019). Microscopy of defects in semiconductors. In F. Tuomisto (Ed.), Characaterisation and Control of Defects in Semiconductors (Materials, Circuits and Devices).. https://doi.org/10.1049/PBCS045E_ch8