Microscopy of defects in semiconductors

Research output: Chapter in Book/Report/Conference proceedingChapter (peer-reviewed)

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Abstract

In this chapter, the authors discuss microscopy techniques that can be useful in addressing defects in semiconductors. They focus on three main families: scanning probe microscopy, scanning electron microscopy and transmission electron microscopy. They first address the basic principles of the selected microscopy techniques In discussions of image formation, they elucidate the mechanisms by which defects are typically imaged in each technique. Then, in the latter part of the chapter, they describe some key examples of the application of microscopy to semiconductor materials, addressing both point and extended defects and both two-dimensional (2D) and three-dimensional (3D) materials.
Original languageEnglish
Title of host publicationCharacaterisation and Control of Defects in Semiconductors
EditorsFilip Tuomisto
Place of Publication[S.I.]
Chapter8
DOIs
Publication statusPublished - 30 Sep 2019

Publication series

NameMaterials, Circuits and Devices

Fingerprint

microscopy
defects
point defects
transmission electron microscopy
scanning electron microscopy
scanning
probes

Keywords

  • microscopy
  • cathodoluminescence
  • atomic force microscopy
  • image formation
  • point defects
  • scanning electron microscopy

Cite this

Massabuau, F. C. -P., Bruckbauer, J., Trager-Cowan, C., & Oliver, R. A. (2019). Microscopy of defects in semiconductors. In F. Tuomisto (Ed.), Characaterisation and Control of Defects in Semiconductors (Materials, Circuits and Devices). [S.I.]. https://doi.org/10.1049/PBCS045E_ch8
Massabuau, Fabien C.-P ; Bruckbauer, Jochen ; Trager-Cowan, Carol ; Oliver, Rachel A. / Microscopy of defects in semiconductors. Characaterisation and Control of Defects in Semiconductors. editor / Filip Tuomisto. [S.I.], 2019. (Materials, Circuits and Devices).
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Massabuau, FC-P, Bruckbauer, J, Trager-Cowan, C & Oliver, RA 2019, Microscopy of defects in semiconductors. in F Tuomisto (ed.), Characaterisation and Control of Defects in Semiconductors. Materials, Circuits and Devices, [S.I.]. https://doi.org/10.1049/PBCS045E_ch8

Microscopy of defects in semiconductors. / Massabuau, Fabien C.-P; Bruckbauer, Jochen; Trager-Cowan, Carol; Oliver, Rachel A.

Characaterisation and Control of Defects in Semiconductors. ed. / Filip Tuomisto. [S.I.], 2019. (Materials, Circuits and Devices).

Research output: Chapter in Book/Report/Conference proceedingChapter (peer-reviewed)

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T1 - Microscopy of defects in semiconductors

AU - Massabuau, Fabien C.-P

AU - Bruckbauer, Jochen

AU - Trager-Cowan, Carol

AU - Oliver, Rachel A

PY - 2019/9/30

Y1 - 2019/9/30

N2 - In this chapter, the authors discuss microscopy techniques that can be useful in addressing defects in semiconductors. They focus on three main families: scanning probe microscopy, scanning electron microscopy and transmission electron microscopy. They first address the basic principles of the selected microscopy techniques In discussions of image formation, they elucidate the mechanisms by which defects are typically imaged in each technique. Then, in the latter part of the chapter, they describe some key examples of the application of microscopy to semiconductor materials, addressing both point and extended defects and both two-dimensional (2D) and three-dimensional (3D) materials.

AB - In this chapter, the authors discuss microscopy techniques that can be useful in addressing defects in semiconductors. They focus on three main families: scanning probe microscopy, scanning electron microscopy and transmission electron microscopy. They first address the basic principles of the selected microscopy techniques In discussions of image formation, they elucidate the mechanisms by which defects are typically imaged in each technique. Then, in the latter part of the chapter, they describe some key examples of the application of microscopy to semiconductor materials, addressing both point and extended defects and both two-dimensional (2D) and three-dimensional (3D) materials.

KW - microscopy

KW - cathodoluminescence

KW - atomic force microscopy

KW - image formation

KW - point defects

KW - scanning electron microscopy

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M3 - Chapter (peer-reviewed)

SN - 978-1-78561-655-6

T3 - Materials, Circuits and Devices

BT - Characaterisation and Control of Defects in Semiconductors

A2 - Tuomisto, Filip

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ER -

Massabuau FC-P, Bruckbauer J, Trager-Cowan C, Oliver RA. Microscopy of defects in semiconductors. In Tuomisto F, editor, Characaterisation and Control of Defects in Semiconductors. [S.I.]. 2019. (Materials, Circuits and Devices). https://doi.org/10.1049/PBCS045E_ch8