Microscopic characterisation of luminescent III-N:RE epilayers

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Study of the luminescence of Rare Earth ions introduced into III-nitride semiconductor hosts produces a wealth of important information. This chapter describes investigations of photoluminescence and cathodoluminescence spectroscopy on a range of RE-implanted samples, with hosts including GaN, AlGaN and AlInN. Raising the post-implantation annealing temperature is shown to lead to a dramatic increase in RE luminescence intensity, and methods to allow annealing well above the growth temperature of the host are discussed. The high-brightness samples that result enable the resolution of additional fine-structure in the luminescence from GaN:Eu and clarification of multiple sites for the RE. Measurements for AlGaN hosts covering the entire composition range point to the importance of core-excitons in the luminescence process. Adding in information from X-ray microanalysis and high spatial resolution luminescence mapping reveals further details of the effects resulting from annealing and of changes in host composition.

LanguageEnglish
Title of host publicationRare Earth Doped III-Nitrides For Optoelectronic And Spintronic Applications
EditorsKevin Peter O'Donnell, Volkmar Dierolf
Place of PublicationBerlin
Pages189-219
Number of pages31
Publication statusPublished - 2010

Publication series

NameTopics in Applied Physics
PublisherSpringer Verlag
Volume124

Fingerprint

luminescence
annealing
cathodoluminescence
microanalysis
nitrides
implantation
brightness
coverings
rare earth elements
spatial resolution
fine structure
excitons
photoluminescence
temperature
high resolution
spectroscopy
ions
x rays

Keywords

  • rare earth ions
  • eu-implanted gan
  • electroluminescent Devices
  • optical-properties
  • light emission
  • blue emission
  • III-Nitrides
  • thin films
  • photoluminescence
  • ER

Cite this

Martin, R. (2010). Microscopic characterisation of luminescent III-N:RE epilayers. In K. P. O'Donnell, & V. Dierolf (Eds.), Rare Earth Doped III-Nitrides For Optoelectronic And Spintronic Applications (pp. 189-219). (Topics in Applied Physics; Vol. 124). Berlin.
Martin, Robert. / Microscopic characterisation of luminescent III-N:RE epilayers. Rare Earth Doped III-Nitrides For Optoelectronic And Spintronic Applications. editor / Kevin Peter O'Donnell ; Volkmar Dierolf. Berlin, 2010. pp. 189-219 (Topics in Applied Physics).
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abstract = "Study of the luminescence of Rare Earth ions introduced into III-nitride semiconductor hosts produces a wealth of important information. This chapter describes investigations of photoluminescence and cathodoluminescence spectroscopy on a range of RE-implanted samples, with hosts including GaN, AlGaN and AlInN. Raising the post-implantation annealing temperature is shown to lead to a dramatic increase in RE luminescence intensity, and methods to allow annealing well above the growth temperature of the host are discussed. The high-brightness samples that result enable the resolution of additional fine-structure in the luminescence from GaN:Eu and clarification of multiple sites for the RE. Measurements for AlGaN hosts covering the entire composition range point to the importance of core-excitons in the luminescence process. Adding in information from X-ray microanalysis and high spatial resolution luminescence mapping reveals further details of the effects resulting from annealing and of changes in host composition.",
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Martin, R 2010, Microscopic characterisation of luminescent III-N:RE epilayers. in KP O'Donnell & V Dierolf (eds), Rare Earth Doped III-Nitrides For Optoelectronic And Spintronic Applications. Topics in Applied Physics, vol. 124, Berlin, pp. 189-219.

Microscopic characterisation of luminescent III-N:RE epilayers. / Martin, Robert.

Rare Earth Doped III-Nitrides For Optoelectronic And Spintronic Applications. ed. / Kevin Peter O'Donnell; Volkmar Dierolf. Berlin, 2010. p. 189-219 (Topics in Applied Physics; Vol. 124).

Research output: Chapter in Book/Report/Conference proceedingChapter

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AB - Study of the luminescence of Rare Earth ions introduced into III-nitride semiconductor hosts produces a wealth of important information. This chapter describes investigations of photoluminescence and cathodoluminescence spectroscopy on a range of RE-implanted samples, with hosts including GaN, AlGaN and AlInN. Raising the post-implantation annealing temperature is shown to lead to a dramatic increase in RE luminescence intensity, and methods to allow annealing well above the growth temperature of the host are discussed. The high-brightness samples that result enable the resolution of additional fine-structure in the luminescence from GaN:Eu and clarification of multiple sites for the RE. Measurements for AlGaN hosts covering the entire composition range point to the importance of core-excitons in the luminescence process. Adding in information from X-ray microanalysis and high spatial resolution luminescence mapping reveals further details of the effects resulting from annealing and of changes in host composition.

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KW - eu-implanted gan

KW - electroluminescent Devices

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KW - blue emission

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KW - thin films

KW - photoluminescence

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Martin R. Microscopic characterisation of luminescent III-N:RE epilayers. In O'Donnell KP, Dierolf V, editors, Rare Earth Doped III-Nitrides For Optoelectronic And Spintronic Applications. Berlin. 2010. p. 189-219. (Topics in Applied Physics).