Abstract
Solar cell technologies are highly dependent on silicon materials and silicon quantum dots (Si-QDs) with optimal energy bandgap present the potential for further development in high efficiency solar cells. Especially, silicon nanocrystals have a special value as they are generally non-toxic and silicon itself has been widely used on an industrial scale. We discuss how plasma-induced surface engineering of doped Si-QDs can impacts the corresponding optical and photovoltaic properties when the Si-QDs are integrated in solar cell devices as high energy photon down0shifter.
Original language | English |
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Pages (from-to) | 1-8 |
Number of pages | 8 |
Journal | ECS Transactions |
Volume | 77 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1 Jan 2017 |
Event | Symposium on Plasma Nano Science and Technology - 231st ECS Meeting 2017 - New Orleans, United States Duration: 28 May 2017 → 1 Jun 2017 |
Keywords
- cell engineering
- nanocrystals
- nanostructured materials