Abstract
Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size similar to 10's of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are. compared and contrasted.
| Original language | English |
|---|---|
| Pages (from-to) | 299-307 |
| Number of pages | 9 |
| Journal | Proceedings of SPIE the International Society for Optical Engineering |
| Volume | 5147 |
| DOIs | |
| Publication status | Published - 2003 |
Keywords
- gallium nitride
- sapphire
- silicon carbide
- ultra-short pulses
- optical engineering
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Rice, G. B., Jones, D. R., Kim, K. S., Girkin, J. M., Jarozynski, D., & Dawson, M. D. (2003). Micromachining of gallium nitride, sapphire and silicon carbide using ultra-short pulses. Proceedings of SPIE the International Society for Optical Engineering, 5147, 299-307. https://doi.org/10.1117/12.543662