Micromachining of gallium nitride, sapphire and silicon carbide using ultra-short pulses

G.B. Rice; D.R. Jones; K.S. Kim; J.M. Girkin; D. Jarozynski; M.D. Dawson

doi:10.1117/12.543662

Micromachining of gallium nitride, sapphire and silicon carbide using ultra-short pulses

G.B. Rice, D.R. Jones, K.S. Kim, J.M. Girkin, D. Jarozynski, M.D. Dawson

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size similar to 10's of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are. compared and contrasted.

Original language	English
Pages (from-to)	299-307
Number of pages	9
Journal	Proceedings of SPIE the International Society for Optical Engineering
Volume	5147
DOIs	https://doi.org/10.1117/12.543662
Publication status	Published - 2003

Keywords

gallium nitride
sapphire
silicon carbide
ultra-short pulses
optical engineering

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title = "Micromachining of gallium nitride, sapphire and silicon carbide using ultra-short pulses",

abstract = "Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size similar to 10's of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are. compared and contrasted.",

keywords = "gallium nitride , sapphire , silicon carbide , ultra-short pulses, optical engineering",

author = "G.B. Rice and D.R. Jones and K.S. Kim and J.M. Girkin and D. Jarozynski and M.D. Dawson",

note = "Alt02 International Conference on Advanced Laser Technologies (2003)",

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AU - Rice, G.B.

AU - Jones, D.R.

AU - Kim, K.S.

AU - Girkin, J.M.

AU - Jarozynski, D.

AU - Dawson, M.D.

N1 - Alt02 International Conference on Advanced Laser Technologies (2003)

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N2 - Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size similar to 10's of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are. compared and contrasted.

AB - Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size similar to 10's of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are. compared and contrasted.

KW - gallium nitride

KW - sapphire

KW - silicon carbide

KW - ultra-short pulses

KW - optical engineering

U2 - 10.1117/12.543662

DO - 10.1117/12.543662

M3 - Article

VL - 5147

SP - 299

EP - 307

JO - Proceedings of SPIE

JF - Proceedings of SPIE

SN - 0277-786X

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