Micromachining of gallium nitride, sapphire and silicon carbide using ultra-short pulses

G.B. Rice, D.R. Jones, K.S. Kim, J.M. Girkin, D. Jarozynski, M.D. Dawson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size similar to 10's of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are. compared and contrasted.
LanguageEnglish
Pages299-307
Number of pages9
JournalProceedings of SPIE the International Society for Optical Engineering
Volume5147
DOIs
Publication statusPublished - 2003

Fingerprint

Ultrashort Pulse
Gallium nitride
Micromachining
Nitrides
Aluminum Oxide
Sapphire
gallium nitrides
micromachining
Ultrashort pulses
Machining
Silicon carbide
machining
silicon carbides
carbides
Silicon
sapphire
Femtosecond Laser Pulses
Ablation
pulses
ablation

Keywords

  • gallium nitride
  • sapphire
  • silicon carbide
  • ultra-short pulses
  • optical engineering

Cite this

@article{4f867cd5d26c4d2eab8fb446fd18ab75,
title = "Micromachining of gallium nitride, sapphire and silicon carbide using ultra-short pulses",
abstract = "Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size similar to 10's of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are. compared and contrasted.",
keywords = "gallium nitride , sapphire , silicon carbide , ultra-short pulses, optical engineering",
author = "G.B. Rice and D.R. Jones and K.S. Kim and J.M. Girkin and D. Jarozynski and M.D. Dawson",
note = "Alt02 International Conference on Advanced Laser Technologies (2003)",
year = "2003",
doi = "10.1117/12.543662",
language = "English",
volume = "5147",
pages = "299--307",
journal = "Proceedings of SPIE",
issn = "0277-786X",

}

Micromachining of gallium nitride, sapphire and silicon carbide using ultra-short pulses. / Rice, G.B.; Jones, D.R.; Kim, K.S.; Girkin, J.M.; Jarozynski, D.; Dawson, M.D.

In: Proceedings of SPIE the International Society for Optical Engineering, Vol. 5147, 2003, p. 299-307.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Micromachining of gallium nitride, sapphire and silicon carbide using ultra-short pulses

AU - Rice, G.B.

AU - Jones, D.R.

AU - Kim, K.S.

AU - Girkin, J.M.

AU - Jarozynski, D.

AU - Dawson, M.D.

N1 - Alt02 International Conference on Advanced Laser Technologies (2003)

PY - 2003

Y1 - 2003

N2 - Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size similar to 10's of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are. compared and contrasted.

AB - Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size similar to 10's of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are. compared and contrasted.

KW - gallium nitride

KW - sapphire

KW - silicon carbide

KW - ultra-short pulses

KW - optical engineering

U2 - 10.1117/12.543662

DO - 10.1117/12.543662

M3 - Article

VL - 5147

SP - 299

EP - 307

JO - Proceedings of SPIE

T2 - Proceedings of SPIE

JF - Proceedings of SPIE

SN - 0277-786X

ER -