Micromachining of gallium nitride, sapphire and silicon carbide using ultra-short pulses

G.B. Rice, D.R. Jones, K.S. Kim, J.M. Girkin, D. Jarozynski, M.D. Dawson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size similar to 10's of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are. compared and contrasted.
Original languageEnglish
Pages (from-to)299-307
Number of pages9
JournalProceedings of SPIE the International Society for Optical Engineering
Volume5147
DOIs
Publication statusPublished - 2003

Keywords

  • gallium nitride
  • sapphire
  • silicon carbide
  • ultra-short pulses
  • optical engineering

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