Microcomposition and luminescence of InGaN emitters

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

Using wavelength dispersive X-ray (WDX) spectrometers on an electron probe micro-analyser (EPMA) the indium content of a number of homogeneous and inhomogeneous InGaN epitaxial layers has been accurately mapped. The addition of a spectrometer and silicon CCD array to the light microscope, which shares the same focus as the electron microscope, enables cathodoluminescence spectra to be collected from exactly the same spot as sampled by the WDX spectrometers. As a result the dependencies of the luminescence energy and linewidth on the local indium nitride fraction can be investigated with greater confidence than in earlier reports, where separate measurements of luminescence and composition were required. Samples studied have indium nitride fractions ranging from <0.01 to approximately 0.25, corresponding to luminescence peaks covering the ultraviolet, blue and green regions of the spectrum. A linear dependence of luminescence peak energy on indium fraction is demonstrated and the linewidth variation plotted. Secondary electron images recorded in the EPMA reveal a wide range of topographies, varying from coalesced micrometre-scale hexagonal crystallites to densely packed layers.
LanguageEnglish
Pages117-123
Number of pages6
JournalPhysica Status Solidi A
Volume192
Issue number1
DOIs
Publication statusPublished - 16 Jul 2002

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Indium
indium
Luminescence
emitters
luminescence
X ray spectrometers
electron probes
spectrometers
Nitrides
Linewidth
nitrides
Electrons
Wavelength
Cathodoluminescence
Epitaxial layers
Silicon
cathodoluminescence
Crystallites
Charge coupled devices
wavelengths

Keywords

  • quantum wells
  • epilayers
  • growth
  • diodes

Cite this

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title = "Microcomposition and luminescence of InGaN emitters",
abstract = "Using wavelength dispersive X-ray (WDX) spectrometers on an electron probe micro-analyser (EPMA) the indium content of a number of homogeneous and inhomogeneous InGaN epitaxial layers has been accurately mapped. The addition of a spectrometer and silicon CCD array to the light microscope, which shares the same focus as the electron microscope, enables cathodoluminescence spectra to be collected from exactly the same spot as sampled by the WDX spectrometers. As a result the dependencies of the luminescence energy and linewidth on the local indium nitride fraction can be investigated with greater confidence than in earlier reports, where separate measurements of luminescence and composition were required. Samples studied have indium nitride fractions ranging from <0.01 to approximately 0.25, corresponding to luminescence peaks covering the ultraviolet, blue and green regions of the spectrum. A linear dependence of luminescence peak energy on indium fraction is demonstrated and the linewidth variation plotted. Secondary electron images recorded in the EPMA reveal a wide range of topographies, varying from coalesced micrometre-scale hexagonal crystallites to densely packed layers.",
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Microcomposition and luminescence of InGaN emitters. / Martin, R.W.; Edwards, P.R.; O'Donnell, K.P.; Mackay, E.G.; Watson, I.M.

In: Physica Status Solidi A, Vol. 192, No. 1, 16.07.2002, p. 117-123.

Research output: Contribution to journalArticle

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T1 - Microcomposition and luminescence of InGaN emitters

AU - Martin, R.W.

AU - Edwards, P.R.

AU - O'Donnell, K.P.

AU - Mackay, E.G.

AU - Watson, I.M.

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N2 - Using wavelength dispersive X-ray (WDX) spectrometers on an electron probe micro-analyser (EPMA) the indium content of a number of homogeneous and inhomogeneous InGaN epitaxial layers has been accurately mapped. The addition of a spectrometer and silicon CCD array to the light microscope, which shares the same focus as the electron microscope, enables cathodoluminescence spectra to be collected from exactly the same spot as sampled by the WDX spectrometers. As a result the dependencies of the luminescence energy and linewidth on the local indium nitride fraction can be investigated with greater confidence than in earlier reports, where separate measurements of luminescence and composition were required. Samples studied have indium nitride fractions ranging from <0.01 to approximately 0.25, corresponding to luminescence peaks covering the ultraviolet, blue and green regions of the spectrum. A linear dependence of luminescence peak energy on indium fraction is demonstrated and the linewidth variation plotted. Secondary electron images recorded in the EPMA reveal a wide range of topographies, varying from coalesced micrometre-scale hexagonal crystallites to densely packed layers.

AB - Using wavelength dispersive X-ray (WDX) spectrometers on an electron probe micro-analyser (EPMA) the indium content of a number of homogeneous and inhomogeneous InGaN epitaxial layers has been accurately mapped. The addition of a spectrometer and silicon CCD array to the light microscope, which shares the same focus as the electron microscope, enables cathodoluminescence spectra to be collected from exactly the same spot as sampled by the WDX spectrometers. As a result the dependencies of the luminescence energy and linewidth on the local indium nitride fraction can be investigated with greater confidence than in earlier reports, where separate measurements of luminescence and composition were required. Samples studied have indium nitride fractions ranging from <0.01 to approximately 0.25, corresponding to luminescence peaks covering the ultraviolet, blue and green regions of the spectrum. A linear dependence of luminescence peak energy on indium fraction is demonstrated and the linewidth variation plotted. Secondary electron images recorded in the EPMA reveal a wide range of topographies, varying from coalesced micrometre-scale hexagonal crystallites to densely packed layers.

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