Microchip vertical external cavity surface emitting lasers

J.E. Hastie, J.M. Hopkins, C.W. Jeon, S. Calvez, D. Burns, M.D. Dawson, R.H. Abram, E. Riis, A.I. Ferguson, W.J. Alford, T.D. Raymond, A.A. Allerman

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

Monolithic vertical external cavity surface emitting lasers of cavity mode volume <1 mm3 have been fabricated in the 850 and 980 nm wavelength range. Pump-limited output power >350 mW in a TEM00 mode was obtained at 850 nm. Output power >2.5 W was obtained at 980 nm.
LanguageEnglish
Pages1324-1326
Number of pages2
JournalElectronics Letters
Volume39
Issue number18
DOIs
Publication statusPublished - 2003

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Surface emitting lasers
Laser modes

Keywords

  • lasers
  • photonics
  • optics
  • diodes
  • quantum electronics
  • applied physics

Cite this

Hastie, J. E., Hopkins, J. M., Jeon, C. W., Calvez, S., Burns, D., Dawson, M. D., ... Allerman, A. A. (2003). Microchip vertical external cavity surface emitting lasers. Electronics Letters, 39(18), 1324-1326. https://doi.org/10.1049/el:20030839
Hastie, J.E. ; Hopkins, J.M. ; Jeon, C.W. ; Calvez, S. ; Burns, D. ; Dawson, M.D. ; Abram, R.H. ; Riis, E. ; Ferguson, A.I. ; Alford, W.J. ; Raymond, T.D. ; Allerman, A.A. / Microchip vertical external cavity surface emitting lasers. In: Electronics Letters. 2003 ; Vol. 39, No. 18. pp. 1324-1326.
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Hastie, JE, Hopkins, JM, Jeon, CW, Calvez, S, Burns, D, Dawson, MD, Abram, RH, Riis, E, Ferguson, AI, Alford, WJ, Raymond, TD & Allerman, AA 2003, 'Microchip vertical external cavity surface emitting lasers' Electronics Letters, vol. 39, no. 18, pp. 1324-1326. https://doi.org/10.1049/el:20030839

Microchip vertical external cavity surface emitting lasers. / Hastie, J.E.; Hopkins, J.M.; Jeon, C.W.; Calvez, S.; Burns, D.; Dawson, M.D.; Abram, R.H.; Riis, E.; Ferguson, A.I.; Alford, W.J.; Raymond, T.D.; Allerman, A.A.

In: Electronics Letters, Vol. 39, No. 18, 2003, p. 1324-1326.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Microchip vertical external cavity surface emitting lasers

AU - Hastie, J.E.

AU - Hopkins, J.M.

AU - Jeon, C.W.

AU - Calvez, S.

AU - Burns, D.

AU - Dawson, M.D.

AU - Abram, R.H.

AU - Riis, E.

AU - Ferguson, A.I.

AU - Alford, W.J.

AU - Raymond, T.D.

AU - Allerman, A.A.

PY - 2003

Y1 - 2003

N2 - Monolithic vertical external cavity surface emitting lasers of cavity mode volume <1 mm3 have been fabricated in the 850 and 980 nm wavelength range. Pump-limited output power >350 mW in a TEM00 mode was obtained at 850 nm. Output power >2.5 W was obtained at 980 nm.

AB - Monolithic vertical external cavity surface emitting lasers of cavity mode volume <1 mm3 have been fabricated in the 850 and 980 nm wavelength range. Pump-limited output power >350 mW in a TEM00 mode was obtained at 850 nm. Output power >2.5 W was obtained at 980 nm.

KW - lasers

KW - photonics

KW - optics

KW - diodes

KW - quantum electronics

KW - applied physics

UR - http://dx.doi.org/10.1049/el:20030839

U2 - 10.1049/el:20030839

DO - 10.1049/el:20030839

M3 - Article

VL - 39

SP - 1324

EP - 1326

JO - Electronics Letters

T2 - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 18

ER -