Micro-structured light emission from planar InGaN light-emitting diodes

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Abstract

Investigation of the surface modification of the p-type layer in GaN light-emitting diodes (LEDs) by exposure to a trifluoromethane plasma is reported. It is found that the plasma treatment reduces the conductivity of the p-GaN by several orders of magnitude, and when applied at room-temperature through a patterned mask, localized current channels into the active region of a p–i–n device are created. This provides a novel approach to laterally modulate the light emission from an LED over essentially planar areas. This technique allows the projection of high-resolution images from non-pixelated devices, and an example application of maskless pattern transfer with sub-micron features into photoresist is demonstrated.
LanguageEnglish
Article number015005
Number of pages6
JournalSemiconductor Science and Technology
Volume29
Issue number1
DOIs
Publication statusPublished - 4 Dec 2013

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Light emission
Light emitting diodes
light emission
light emitting diodes
Plasmas
Photoresists
Image resolution
photoresists
Surface treatment
Masks
masks
projection
conductivity
high resolution
room temperature
Temperature
fluoroform

Keywords

  • light emitting diodes
  • InGaN
  • light emission

Cite this

@article{03bd161c16c24b6da9d0a2652b2fcd4b,
title = "Micro-structured light emission from planar InGaN light-emitting diodes",
abstract = "Investigation of the surface modification of the p-type layer in GaN light-emitting diodes (LEDs) by exposure to a trifluoromethane plasma is reported. It is found that the plasma treatment reduces the conductivity of the p-GaN by several orders of magnitude, and when applied at room-temperature through a patterned mask, localized current channels into the active region of a p–i–n device are created. This provides a novel approach to laterally modulate the light emission from an LED over essentially planar areas. This technique allows the projection of high-resolution images from non-pixelated devices, and an example application of maskless pattern transfer with sub-micron features into photoresist is demonstrated.",
keywords = "light emitting diodes, InGaN, light emission",
author = "David Massoubre and Enyuan Xie and Guilhabert, {Benoit Jack Eloi} and Johannes Herrnsdorf and Erdan Gu and Ian Watson and Martin Dawson",
year = "2013",
month = "12",
day = "4",
doi = "10.1088/0268-1242/29/1/015005",
language = "English",
volume = "29",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
number = "1",

}

TY - JOUR

T1 - Micro-structured light emission from planar InGaN light-emitting diodes

AU - Massoubre, David

AU - Xie, Enyuan

AU - Guilhabert, Benoit Jack Eloi

AU - Herrnsdorf, Johannes

AU - Gu, Erdan

AU - Watson, Ian

AU - Dawson, Martin

PY - 2013/12/4

Y1 - 2013/12/4

N2 - Investigation of the surface modification of the p-type layer in GaN light-emitting diodes (LEDs) by exposure to a trifluoromethane plasma is reported. It is found that the plasma treatment reduces the conductivity of the p-GaN by several orders of magnitude, and when applied at room-temperature through a patterned mask, localized current channels into the active region of a p–i–n device are created. This provides a novel approach to laterally modulate the light emission from an LED over essentially planar areas. This technique allows the projection of high-resolution images from non-pixelated devices, and an example application of maskless pattern transfer with sub-micron features into photoresist is demonstrated.

AB - Investigation of the surface modification of the p-type layer in GaN light-emitting diodes (LEDs) by exposure to a trifluoromethane plasma is reported. It is found that the plasma treatment reduces the conductivity of the p-GaN by several orders of magnitude, and when applied at room-temperature through a patterned mask, localized current channels into the active region of a p–i–n device are created. This provides a novel approach to laterally modulate the light emission from an LED over essentially planar areas. This technique allows the projection of high-resolution images from non-pixelated devices, and an example application of maskless pattern transfer with sub-micron features into photoresist is demonstrated.

KW - light emitting diodes

KW - InGaN

KW - light emission

U2 - 10.1088/0268-1242/29/1/015005

DO - 10.1088/0268-1242/29/1/015005

M3 - Article

VL - 29

JO - Semiconductor Science and Technology

T2 - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 1

M1 - 015005

ER -