Micro-structured light emission from planar InGaN light-emitting diodes

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7 Citations (Scopus)


Investigation of the surface modification of the p-type layer in GaN light-emitting diodes (LEDs) by exposure to a trifluoromethane plasma is reported. It is found that the plasma treatment reduces the conductivity of the p-GaN by several orders of magnitude, and when applied at room-temperature through a patterned mask, localized current channels into the active region of a p–i–n device are created. This provides a novel approach to laterally modulate the light emission from an LED over essentially planar areas. This technique allows the projection of high-resolution images from non-pixelated devices, and an example application of maskless pattern transfer with sub-micron features into photoresist is demonstrated.
Original languageEnglish
Article number015005
Number of pages6
JournalSemiconductor Science and Technology
Issue number1
Publication statusPublished - 4 Dec 2013


  • light emitting diodes
  • InGaN
  • light emission


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