Micro-pixellated flip-chip inGaN and allnGaN light emitting diodes

C. Griffin; H.X. Zhang; D. Massoubre; E. Gu; M.D. Dawson

Micro-pixellated flip-chip inGaN and allnGaN light emitting diodes

C. Griffin, H.X. Zhang, D. Massoubre, E. Gu, M.D. Dawson

Research output: Contribution to conference › Paper

Abstract

Flip-chip GaN-based micro-LED arrays have been fabricated consisting of 256 (16 x 16) micropixels, each of diameter 72μm. Output characteristics are compared to broad-area reference LED devices fabricated from the same wafers.

Original language	English
Publication status	Unpublished - 7 May 2007
Event	Conference on Lasers and Electro-Optics - Baltimore, United States Duration: 6 May 2007 → 7 May 2007

Conference

Conference	Conference on Lasers and Electro-Optics
Abbreviated title	CLEO 2007
Country/Territory	United States
City	Baltimore
Period	6/05/07 → 7/05/07

Keywords

Flip-chip
GaN-based micro-LED
LED arrays
LED devices
LED fabrication

Cite this

@conference{513ccaa924b74661bac0dff0fdbc58f9,

title = "Micro-pixellated flip-chip inGaN and allnGaN light emitting diodes",

abstract = "Flip-chip GaN-based micro-LED arrays have been fabricated consisting of 256 (16 x 16) micropixels, each of diameter 72μm. Output characteristics are compared to broad-area reference LED devices fabricated from the same wafers.",

keywords = "Flip-chip, GaN-based micro-LED, LED arrays, LED devices, LED fabrication",

author = "C. Griffin and H.X. Zhang and D. Massoubre and E. Gu and M.D. Dawson",

year = "2007",

month = may,

day = "7",

language = "English",

note = "Conference on Lasers and Electro-Optics , CLEO 2007 ; Conference date: 06-05-2007 Through 07-05-2007",

}

TY - CONF

T1 - Micro-pixellated flip-chip inGaN and allnGaN light emitting diodes

AU - Griffin, C.

AU - Zhang, H.X.

AU - Massoubre, D.

AU - Gu, E.

AU - Dawson, M.D.

PY - 2007/5/7

Y1 - 2007/5/7

N2 - Flip-chip GaN-based micro-LED arrays have been fabricated consisting of 256 (16 x 16) micropixels, each of diameter 72μm. Output characteristics are compared to broad-area reference LED devices fabricated from the same wafers.

AB - Flip-chip GaN-based micro-LED arrays have been fabricated consisting of 256 (16 x 16) micropixels, each of diameter 72μm. Output characteristics are compared to broad-area reference LED devices fabricated from the same wafers.

KW - Flip-chip

KW - GaN-based micro-LED

KW - LED arrays

KW - LED devices

KW - LED fabrication

UR - http://www.cleoconference.org/materials/CPCLEO07Monday.pdf

M3 - Paper

T2 - Conference on Lasers and Electro-Optics

Y2 - 6 May 2007 through 7 May 2007

ER -

Micro-pixellated flip-chip inGaN and allnGaN light emitting diodes

Abstract

Conference

Keywords

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