Abstract
| Language | English |
|---|---|
| Pages | 77-81 |
| Number of pages | 4 |
| Journal | Micro and Nano Letters |
| Volume | 3 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Sep 2008 |
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Keywords
- capacitors
- coplanar waveguides
- inductors
- micromachining
- micromechanical devices
- microwave devices
- MEMS microwave device
- capacitive-inductive switchover
- chevron microactuator
- commercial foundry process
- coplanar waveguide architecture
- electroplated nickel
- frequency 1 GHz to 16 GHz
- front-side bulk micromachining
- interdigitated comb fingers
- switchable capacitive state
- switchable inductive state
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MEMS microwave device with switchable capacitive and inductive states. / Li, L.; Uttamchandani, D.G.
In: Micro and Nano Letters, Vol. 3, No. 3, 09.2008, p. 77-81.Research output: Contribution to journal › Article
TY - JOUR
T1 - MEMS microwave device with switchable capacitive and inductive states
AU - Li, L.
AU - Uttamchandani, D.G.
PY - 2008/9
Y1 - 2008/9
N2 - A microwave microelectromechanical system (MEMS) device that can be switched between capacitive and inductive states over the frequency range of 1 to 16 GHz is reported. The device has been designed based on coplanar waveguide architecture, and realised in thickly electroplated nickel with front-side bulk micromachining of the substrate using a commercial foundry process. The capacitive-to-inductive switchover has been achieved by changing the gap of the interdigitated comb fingers using a chevron microactuator. Experimental characterisation of the device has been conducted, and capacitances ~0.2 pF in the frequency range of 1-16 GHz have been measured in the 'off' state (driving voltage of the microactuator is 0 V), whereas inductances ~0.5 nH in the frequency range of 1-16 GHz have been measured in the 'on' state (driving voltage of the microactuator is ~1 V).
AB - A microwave microelectromechanical system (MEMS) device that can be switched between capacitive and inductive states over the frequency range of 1 to 16 GHz is reported. The device has been designed based on coplanar waveguide architecture, and realised in thickly electroplated nickel with front-side bulk micromachining of the substrate using a commercial foundry process. The capacitive-to-inductive switchover has been achieved by changing the gap of the interdigitated comb fingers using a chevron microactuator. Experimental characterisation of the device has been conducted, and capacitances ~0.2 pF in the frequency range of 1-16 GHz have been measured in the 'off' state (driving voltage of the microactuator is 0 V), whereas inductances ~0.5 nH in the frequency range of 1-16 GHz have been measured in the 'on' state (driving voltage of the microactuator is ~1 V).
KW - capacitors
KW - coplanar waveguides
KW - inductors
KW - micromachining
KW - micromechanical devices
KW - microwave devices
KW - MEMS microwave device
KW - capacitive-inductive switchover
KW - chevron microactuator
KW - commercial foundry process
KW - coplanar waveguide architecture
KW - electroplated nickel
KW - frequency 1 GHz to 16 GHz
KW - front-side bulk micromachining
KW - interdigitated comb fingers
KW - switchable capacitive state
KW - switchable inductive state
UR - http://dx.doi.org/10.1049/mnl:20080020
U2 - 10.1049/mnl:20080020
DO - 10.1049/mnl:20080020
M3 - Article
VL - 3
SP - 77
EP - 81
JO - Micro and Nano Letters
T2 - Micro and Nano Letters
JF - Micro and Nano Letters
SN - 1750-0443
IS - 3
ER -