Membrane structures containing InGaN/GaN quantum wells, fabricated by wet etching of sacrificial silicon substrates

S. Park, C. Liu, E. Gu, M.D. Dawson, I.M. Watson, K. Bejtka, P.R. Edwards, R.W. Martin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

InGaN/GaN multiple quantum wells (MQWs) emitting at 410-505 nm, with either 3 or 16 repeat periods, were grown on commercial GaN-on-silicon templates using metal organic vapour phase epitaxy. Spectroscopic and structural studies confirmed these MQWs are of similar quality to analogues grown on sapphire substrates. Wet etching of the silicon (111) substrates in HF-based solutions allowed the MQW structures to be converted into membranes up to 2 mm in diameter, suspended above macroscopic via holes. Such a fabrication step is attractive for the production of microcavities, and other forms of surface emitting laser. Several MQWs have been compared by photoluminescence and cathodoluminescence spectroscopy before and after conversion to membranes. These measurements indicated a consistent increase in luminescence intensity after substrate removal, accompanied by small redshifts in peak position. We have further demonstrated plasma etching of membrane structures from the underside, as will be used to optimise structures for optical pumping, and used atomic force microscopy to monitor associated changes in surface roughness.
LanguageEnglish
Pages1949-1952
Number of pages3
JournalPhysica Status Solidi C
Volume3
Issue number6
DOIs
Publication statusPublished - 2006

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membrane structures
etching
quantum wells
silicon
membranes
optical pumping
plasma etching
cathodoluminescence
surface emitting lasers
vapor phase epitaxy
surface roughness
sapphire
templates
atomic force microscopy
analogs
luminescence
photoluminescence
fabrication
metals
spectroscopy

Keywords

  • quantum wells
  • photonics
  • quantum physics
  • optics
  • lasers

Cite this

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title = "Membrane structures containing InGaN/GaN quantum wells, fabricated by wet etching of sacrificial silicon substrates",
abstract = "InGaN/GaN multiple quantum wells (MQWs) emitting at 410-505 nm, with either 3 or 16 repeat periods, were grown on commercial GaN-on-silicon templates using metal organic vapour phase epitaxy. Spectroscopic and structural studies confirmed these MQWs are of similar quality to analogues grown on sapphire substrates. Wet etching of the silicon (111) substrates in HF-based solutions allowed the MQW structures to be converted into membranes up to 2 mm in diameter, suspended above macroscopic via holes. Such a fabrication step is attractive for the production of microcavities, and other forms of surface emitting laser. Several MQWs have been compared by photoluminescence and cathodoluminescence spectroscopy before and after conversion to membranes. These measurements indicated a consistent increase in luminescence intensity after substrate removal, accompanied by small redshifts in peak position. We have further demonstrated plasma etching of membrane structures from the underside, as will be used to optimise structures for optical pumping, and used atomic force microscopy to monitor associated changes in surface roughness.",
keywords = "quantum wells, photonics, quantum physics, optics, lasers",
author = "S. Park and C. Liu and E. Gu and M.D. Dawson and I.M. Watson and K. Bejtka and P.R. Edwards and R.W. Martin",
year = "2006",
doi = "10.1002/pssc.200565188",
language = "English",
volume = "3",
pages = "1949--1952",
journal = "Physica Status Solidi C",
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TY - JOUR

T1 - Membrane structures containing InGaN/GaN quantum wells, fabricated by wet etching of sacrificial silicon substrates

AU - Park, S.

AU - Liu, C.

AU - Gu, E.

AU - Dawson, M.D.

AU - Watson, I.M.

AU - Bejtka, K.

AU - Edwards, P.R.

AU - Martin, R.W.

PY - 2006

Y1 - 2006

N2 - InGaN/GaN multiple quantum wells (MQWs) emitting at 410-505 nm, with either 3 or 16 repeat periods, were grown on commercial GaN-on-silicon templates using metal organic vapour phase epitaxy. Spectroscopic and structural studies confirmed these MQWs are of similar quality to analogues grown on sapphire substrates. Wet etching of the silicon (111) substrates in HF-based solutions allowed the MQW structures to be converted into membranes up to 2 mm in diameter, suspended above macroscopic via holes. Such a fabrication step is attractive for the production of microcavities, and other forms of surface emitting laser. Several MQWs have been compared by photoluminescence and cathodoluminescence spectroscopy before and after conversion to membranes. These measurements indicated a consistent increase in luminescence intensity after substrate removal, accompanied by small redshifts in peak position. We have further demonstrated plasma etching of membrane structures from the underside, as will be used to optimise structures for optical pumping, and used atomic force microscopy to monitor associated changes in surface roughness.

AB - InGaN/GaN multiple quantum wells (MQWs) emitting at 410-505 nm, with either 3 or 16 repeat periods, were grown on commercial GaN-on-silicon templates using metal organic vapour phase epitaxy. Spectroscopic and structural studies confirmed these MQWs are of similar quality to analogues grown on sapphire substrates. Wet etching of the silicon (111) substrates in HF-based solutions allowed the MQW structures to be converted into membranes up to 2 mm in diameter, suspended above macroscopic via holes. Such a fabrication step is attractive for the production of microcavities, and other forms of surface emitting laser. Several MQWs have been compared by photoluminescence and cathodoluminescence spectroscopy before and after conversion to membranes. These measurements indicated a consistent increase in luminescence intensity after substrate removal, accompanied by small redshifts in peak position. We have further demonstrated plasma etching of membrane structures from the underside, as will be used to optimise structures for optical pumping, and used atomic force microscopy to monitor associated changes in surface roughness.

KW - quantum wells

KW - photonics

KW - quantum physics

KW - optics

KW - lasers

UR - http://dx.doi.org/10.1002/pssc.200565188

U2 - 10.1002/pssc.200565188

DO - 10.1002/pssc.200565188

M3 - Article

VL - 3

SP - 1949

EP - 1952

JO - Physica Status Solidi C

T2 - Physica Status Solidi C

JF - Physica Status Solidi C

SN - 1862-6351

IS - 6

ER -