Medium-voltage pulse width modulated current source rectifiers using different semiconductors: loss and size comparison

A.M. Abdelsalam, M.I. Masoud, S.J. Finney, B.W. Williams

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

In this study, a comparison of losses and physical size is presented for three semiconductor devices suitable for medium-voltage high-power applications. The comparison is made for medium-voltage pulse width modulated (PWM) current source rectifiers (CSRs) using a selective harmonic elimination technique. The devices are high-voltage insulated gate bipolar transistors and two types of hard-driven thyristors, namely the symmetrical gate commutated thyristor and the asymmetrical gate commutated thyristor. The study is based on practical devices using data sheets from semiconductor device vendors, taking into account accurate discrimination between turn-off and recovery states. The constant-voltage switching energy data sheet curves for voltage source converters are adapted to suit varying voltage applications like the PWM-CSR, with emphasis on how voltage is shared between series devices during each commutation instant.
LanguageEnglish
Pages243-258
Number of pages15
JournalIET Power Electronics
Volume3
Issue number2
DOIs
Publication statusPublished - Mar 2010

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Semiconductor materials
Electric potential
Thyristors
Semiconductor devices
Electric commutation
Insulated gate bipolar transistors (IGBT)
Recovery

Keywords

  • PWM power convertors
  • insulated gate bipolar transistors
  • pulse width modulation
  • rectifiers
  • switching
  • thyristors

Cite this

@article{03b3818a9e1b46458e4f12f670db2261,
title = "Medium-voltage pulse width modulated current source rectifiers using different semiconductors: loss and size comparison",
abstract = "In this study, a comparison of losses and physical size is presented for three semiconductor devices suitable for medium-voltage high-power applications. The comparison is made for medium-voltage pulse width modulated (PWM) current source rectifiers (CSRs) using a selective harmonic elimination technique. The devices are high-voltage insulated gate bipolar transistors and two types of hard-driven thyristors, namely the symmetrical gate commutated thyristor and the asymmetrical gate commutated thyristor. The study is based on practical devices using data sheets from semiconductor device vendors, taking into account accurate discrimination between turn-off and recovery states. The constant-voltage switching energy data sheet curves for voltage source converters are adapted to suit varying voltage applications like the PWM-CSR, with emphasis on how voltage is shared between series devices during each commutation instant.",
keywords = "PWM power convertors, insulated gate bipolar transistors, pulse width modulation, rectifiers, switching, thyristors",
author = "A.M. Abdelsalam and M.I. Masoud and S.J. Finney and B.W. Williams",
year = "2010",
month = "3",
doi = "10.1049/iet-pel.2008.0252",
language = "English",
volume = "3",
pages = "243--258",
journal = "IET Power Electronics",
issn = "1755-4535",
publisher = "Institution of Engineering and Technology",
number = "2",

}

Medium-voltage pulse width modulated current source rectifiers using different semiconductors: loss and size comparison. / Abdelsalam, A.M.; Masoud, M.I.; Finney, S.J.; Williams, B.W.

In: IET Power Electronics, Vol. 3, No. 2, 03.2010, p. 243-258.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Medium-voltage pulse width modulated current source rectifiers using different semiconductors: loss and size comparison

AU - Abdelsalam, A.M.

AU - Masoud, M.I.

AU - Finney, S.J.

AU - Williams, B.W.

PY - 2010/3

Y1 - 2010/3

N2 - In this study, a comparison of losses and physical size is presented for three semiconductor devices suitable for medium-voltage high-power applications. The comparison is made for medium-voltage pulse width modulated (PWM) current source rectifiers (CSRs) using a selective harmonic elimination technique. The devices are high-voltage insulated gate bipolar transistors and two types of hard-driven thyristors, namely the symmetrical gate commutated thyristor and the asymmetrical gate commutated thyristor. The study is based on practical devices using data sheets from semiconductor device vendors, taking into account accurate discrimination between turn-off and recovery states. The constant-voltage switching energy data sheet curves for voltage source converters are adapted to suit varying voltage applications like the PWM-CSR, with emphasis on how voltage is shared between series devices during each commutation instant.

AB - In this study, a comparison of losses and physical size is presented for three semiconductor devices suitable for medium-voltage high-power applications. The comparison is made for medium-voltage pulse width modulated (PWM) current source rectifiers (CSRs) using a selective harmonic elimination technique. The devices are high-voltage insulated gate bipolar transistors and two types of hard-driven thyristors, namely the symmetrical gate commutated thyristor and the asymmetrical gate commutated thyristor. The study is based on practical devices using data sheets from semiconductor device vendors, taking into account accurate discrimination between turn-off and recovery states. The constant-voltage switching energy data sheet curves for voltage source converters are adapted to suit varying voltage applications like the PWM-CSR, with emphasis on how voltage is shared between series devices during each commutation instant.

KW - PWM power convertors

KW - insulated gate bipolar transistors

KW - pulse width modulation

KW - rectifiers

KW - switching

KW - thyristors

UR - http://www.scopus.com/inward/record.url?scp=78651581034&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1049/iet-pel.2008.0252

U2 - 10.1049/iet-pel.2008.0252

DO - 10.1049/iet-pel.2008.0252

M3 - Article

VL - 3

SP - 243

EP - 258

JO - IET Power Electronics

T2 - IET Power Electronics

JF - IET Power Electronics

SN - 1755-4535

IS - 2

ER -