Abstract
| Language | English |
|---|---|
| Pages | 243-258 |
| Number of pages | 15 |
| Journal | IET Power Electronics |
| Volume | 3 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Mar 2010 |
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Keywords
- PWM power convertors
- insulated gate bipolar transistors
- pulse width modulation
- rectifiers
- switching
- thyristors
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Medium-voltage pulse width modulated current source rectifiers using different semiconductors: loss and size comparison. / Abdelsalam, A.M.; Masoud, M.I.; Finney, S.J.; Williams, B.W.
In: IET Power Electronics, Vol. 3, No. 2, 03.2010, p. 243-258.Research output: Contribution to journal › Article
TY - JOUR
T1 - Medium-voltage pulse width modulated current source rectifiers using different semiconductors: loss and size comparison
AU - Abdelsalam, A.M.
AU - Masoud, M.I.
AU - Finney, S.J.
AU - Williams, B.W.
PY - 2010/3
Y1 - 2010/3
N2 - In this study, a comparison of losses and physical size is presented for three semiconductor devices suitable for medium-voltage high-power applications. The comparison is made for medium-voltage pulse width modulated (PWM) current source rectifiers (CSRs) using a selective harmonic elimination technique. The devices are high-voltage insulated gate bipolar transistors and two types of hard-driven thyristors, namely the symmetrical gate commutated thyristor and the asymmetrical gate commutated thyristor. The study is based on practical devices using data sheets from semiconductor device vendors, taking into account accurate discrimination between turn-off and recovery states. The constant-voltage switching energy data sheet curves for voltage source converters are adapted to suit varying voltage applications like the PWM-CSR, with emphasis on how voltage is shared between series devices during each commutation instant.
AB - In this study, a comparison of losses and physical size is presented for three semiconductor devices suitable for medium-voltage high-power applications. The comparison is made for medium-voltage pulse width modulated (PWM) current source rectifiers (CSRs) using a selective harmonic elimination technique. The devices are high-voltage insulated gate bipolar transistors and two types of hard-driven thyristors, namely the symmetrical gate commutated thyristor and the asymmetrical gate commutated thyristor. The study is based on practical devices using data sheets from semiconductor device vendors, taking into account accurate discrimination between turn-off and recovery states. The constant-voltage switching energy data sheet curves for voltage source converters are adapted to suit varying voltage applications like the PWM-CSR, with emphasis on how voltage is shared between series devices during each commutation instant.
KW - PWM power convertors
KW - insulated gate bipolar transistors
KW - pulse width modulation
KW - rectifiers
KW - switching
KW - thyristors
UR - http://www.scopus.com/inward/record.url?scp=78651581034&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1049/iet-pel.2008.0252
U2 - 10.1049/iet-pel.2008.0252
DO - 10.1049/iet-pel.2008.0252
M3 - Article
VL - 3
SP - 243
EP - 258
JO - IET Power Electronics
T2 - IET Power Electronics
JF - IET Power Electronics
SN - 1755-4535
IS - 2
ER -