Mechanisms of AllnN growth by MOVPE: modeling and experimental study

E.V. Yakovlev, A.V. Lobanova, R.A. Talalaev, I.M. Watson, K. Lorenz, E. Alves

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Abstract

Factors affecting the AlInN layer composition have been studied, using both modelling and experimental approaches. The experiments have been performed in a single-wafer Aixtron AIX 200/4 RF-S reactor at setpoint temperatures ranging from 760 to 840 °C, which corresponds to the InN content variation in a wide interval from 13 to about 24%, if other process parameters remain unchanged. The computations fit well the compositional experimental data, and can be used to identify the mechanisms governing the incorporation of the indium atoms into MOVPE grown AlInN layers.
Original languageEnglish
Pages (from-to)1688-1690
Number of pages2
JournalPhysica Status Solidi C
Volume5
Issue number6
DOIs
Publication statusPublished - 16 Apr 2008

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Keywords

  • reactor
  • film deposition
  • vapor phase epitaxy
  • chemical kinetics
  • computer modeling
  • computer simulation
  • metal-organic vapour phase epitaxy
  • MOVPE

Cite this

Yakovlev, E. V., Lobanova, A. V., Talalaev, R. A., Watson, I. M., Lorenz, K., & Alves, E. (2008). Mechanisms of AllnN growth by MOVPE: modeling and experimental study. Physica Status Solidi C, 5(6), 1688-1690. https://doi.org/10.1002/pssc.200778588