Mechanisms of AllnN growth by MOVPE: modeling and experimental study

E.V. Yakovlev; A.V. Lobanova; R.A. Talalaev; I.M. Watson; K. Lorenz; E. Alves

doi:10.1002/pssc.200778588

Mechanisms of AllnN growth by MOVPE: modeling and experimental study

E.V. Yakovlev, A.V. Lobanova, R.A. Talalaev, I.M. Watson, K. Lorenz, E. Alves

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Factors affecting the AlInN layer composition have been studied, using both modelling and experimental approaches. The experiments have been performed in a single-wafer Aixtron AIX 200/4 RF-S reactor at setpoint temperatures ranging from 760 to 840 °C, which corresponds to the InN content variation in a wide interval from 13 to about 24%, if other process parameters remain unchanged. The computations fit well the compositional experimental data, and can be used to identify the mechanisms governing the incorporation of the indium atoms into MOVPE grown AlInN layers.

Original language	English
Pages (from-to)	1688-1690
Number of pages	2
Journal	Physica Status Solidi C
Volume	5
Issue number	6
DOIs	https://doi.org/10.1002/pssc.200778588
Publication status	Published - 16 Apr 2008

Keywords

reactor
film deposition
vapor phase epitaxy
chemical kinetics
computer modeling
computer simulation
metal-organic vapour phase epitaxy
MOVPE

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10.1002/pssc.200778588

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title = "Mechanisms of AllnN growth by MOVPE: modeling and experimental study",

abstract = "Factors affecting the AlInN layer composition have been studied, using both modelling and experimental approaches. The experiments have been performed in a single-wafer Aixtron AIX 200/4 RF-S reactor at setpoint temperatures ranging from 760 to 840 °C, which corresponds to the InN content variation in a wide interval from 13 to about 24%, if other process parameters remain unchanged. The computations fit well the compositional experimental data, and can be used to identify the mechanisms governing the incorporation of the indium atoms into MOVPE grown AlInN layers.",

keywords = "reactor, film deposition, vapor phase epitaxy, chemical kinetics, computer modeling, computer simulation, metal-organic vapour phase epitaxy, MOVPE",

author = "E.V. Yakovlev and A.V. Lobanova and R.A. Talalaev and I.M. Watson and K. Lorenz and E. Alves",

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AU - Yakovlev, E.V.

AU - Lobanova, A.V.

AU - Talalaev, R.A.

AU - Watson, I.M.

AU - Lorenz, K.

AU - Alves, E.

PY - 2008/4/16

Y1 - 2008/4/16

N2 - Factors affecting the AlInN layer composition have been studied, using both modelling and experimental approaches. The experiments have been performed in a single-wafer Aixtron AIX 200/4 RF-S reactor at setpoint temperatures ranging from 760 to 840 °C, which corresponds to the InN content variation in a wide interval from 13 to about 24%, if other process parameters remain unchanged. The computations fit well the compositional experimental data, and can be used to identify the mechanisms governing the incorporation of the indium atoms into MOVPE grown AlInN layers.

AB - Factors affecting the AlInN layer composition have been studied, using both modelling and experimental approaches. The experiments have been performed in a single-wafer Aixtron AIX 200/4 RF-S reactor at setpoint temperatures ranging from 760 to 840 °C, which corresponds to the InN content variation in a wide interval from 13 to about 24%, if other process parameters remain unchanged. The computations fit well the compositional experimental data, and can be used to identify the mechanisms governing the incorporation of the indium atoms into MOVPE grown AlInN layers.

KW - reactor

KW - film deposition

KW - vapor phase epitaxy

KW - chemical kinetics

KW - computer modeling

KW - computer simulation

KW - metal-organic vapour phase epitaxy

KW - MOVPE

UR - http://dx.doi.org/10.1002/pssc.200778588

U2 - 10.1002/pssc.200778588

DO - 10.1002/pssc.200778588

M3 - Article

VL - 5

SP - 1688

EP - 1690

JO - Physica Status Solidi C

JF - Physica Status Solidi C

SN - 1862-6351

IS - 6

ER -

Mechanisms of AllnN growth by MOVPE: modeling and experimental study

Abstract

Keywords

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