Measurement of the temperature coefficient of Young's modulus of single crystal silicon and 3C silicon carbide below 273 K using micro-cantilevers

Euan J. Boyd, Li Li, Robert Blue, Deepak Uttamchandani

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

This paper reports on the measurement of the thermal coefficient of Young's modulus of both single crystal silicon and 3C silicon carbide over the temperature range spanning 200-290 K. The thermal coefficients were determined by monitoring the change of resonance frequency of micro-cantilevers as their temperature was reduced. The thermal coefficient of Young's modulus, 1/E · δE/δT was measured to be -52.6 ± 3.45 ppm/K for silicon and -39.8 ± 5.99 ppm/K for 3C silicon carbide, agreeing well with theoretical predictions, and also with experimental values that have been previously published for temperatures above 273 K. This work has therefore expanded the temperature range over which the thermal coefficient of Young's modulus has been measured to below 273 K and towards the temperatures required for low-temperature military and space applications.
LanguageEnglish
Pages75-80
Number of pages6
JournalSensors and Actuators A: Physical
Volume198
DOIs
Publication statusPublished - 15 May 2013

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Silicon
Silicon carbide
silicon carbides
modulus of elasticity
Elastic moduli
Single crystals
single crystals
silicon
coefficients
Temperature
temperature
Military applications
Space applications
silicon carbide
predictions
Hot Temperature
Monitoring

Keywords

  • laser vibrometry
  • low temperature
  • MEMS cantilever
  • silicon carbide
  • Young's modulus
  • temperature
  • coefficient
  • 3C silicon carbide
  • micro-cantilevers

Cite this

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title = "Measurement of the temperature coefficient of Young's modulus of single crystal silicon and 3C silicon carbide below 273 K using micro-cantilevers",
abstract = "This paper reports on the measurement of the thermal coefficient of Young's modulus of both single crystal silicon and 3C silicon carbide over the temperature range spanning 200-290 K. The thermal coefficients were determined by monitoring the change of resonance frequency of micro-cantilevers as their temperature was reduced. The thermal coefficient of Young's modulus, 1/E · δE/δT was measured to be -52.6 ± 3.45 ppm/K for silicon and -39.8 ± 5.99 ppm/K for 3C silicon carbide, agreeing well with theoretical predictions, and also with experimental values that have been previously published for temperatures above 273 K. This work has therefore expanded the temperature range over which the thermal coefficient of Young's modulus has been measured to below 273 K and towards the temperatures required for low-temperature military and space applications.",
keywords = "laser vibrometry, low temperature, MEMS cantilever, silicon carbide, Young's modulus, temperature, coefficient, 3C silicon carbide, micro-cantilevers",
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AU - Li, Li

AU - Blue, Robert

AU - Uttamchandani, Deepak

PY - 2013/5/15

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N2 - This paper reports on the measurement of the thermal coefficient of Young's modulus of both single crystal silicon and 3C silicon carbide over the temperature range spanning 200-290 K. The thermal coefficients were determined by monitoring the change of resonance frequency of micro-cantilevers as their temperature was reduced. The thermal coefficient of Young's modulus, 1/E · δE/δT was measured to be -52.6 ± 3.45 ppm/K for silicon and -39.8 ± 5.99 ppm/K for 3C silicon carbide, agreeing well with theoretical predictions, and also with experimental values that have been previously published for temperatures above 273 K. This work has therefore expanded the temperature range over which the thermal coefficient of Young's modulus has been measured to below 273 K and towards the temperatures required for low-temperature military and space applications.

AB - This paper reports on the measurement of the thermal coefficient of Young's modulus of both single crystal silicon and 3C silicon carbide over the temperature range spanning 200-290 K. The thermal coefficients were determined by monitoring the change of resonance frequency of micro-cantilevers as their temperature was reduced. The thermal coefficient of Young's modulus, 1/E · δE/δT was measured to be -52.6 ± 3.45 ppm/K for silicon and -39.8 ± 5.99 ppm/K for 3C silicon carbide, agreeing well with theoretical predictions, and also with experimental values that have been previously published for temperatures above 273 K. This work has therefore expanded the temperature range over which the thermal coefficient of Young's modulus has been measured to below 273 K and towards the temperatures required for low-temperature military and space applications.

KW - laser vibrometry

KW - low temperature

KW - MEMS cantilever

KW - silicon carbide

KW - Young's modulus

KW - temperature

KW - coefficient

KW - 3C silicon carbide

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