Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output

Z. Gong, H.X. Zhang, Erdan Gu, C. Griffin, Martin D. Dawson, V. Poher, G.T. Kennedy, P.M.W. French, M.A.A. Neil

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Micropixellated InGaN light-emitting diodes (micro- LEDs) have a wide number of potential applications in areas including microdisplays, fluorescence-based assays and microscopy, and cell micromanipulation. Here, we present fabrication and performance details of matrix-addressable micro-LED devices which show significant improvements over their earlier counterparts. Devices with 64 × 64 micropixel elements, each of them having a 16-μm-diameter emission aperture on a 50-μm pitch, have been fabricated at blue (470 nm), green (510 nm), and UV (370 nm) wavelengths, respectively. Importantly, we have adopted a scheme of running n-metal tracks adjacent to each n-GaN mesa, so that resistance variation between the devices is reduced to below 8%, in contrast to the earlier fivefold resistance variation encountered. We have also made improvements to the spreading-layer formation scheme, resulting in significant increases in output power per element, improved current handling, and reduced turn-on voltages. These devices have been combined with a computerdriven programmable driver interface operating in constantcurrent mode, and representative microdisplay outputs are presented.
LanguageEnglish
Pages2650-2658
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume54
Issue number10
DOIs
Publication statusPublished - Oct 2007

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Light emitting diodes
Assays
Microscopic examination
Metals
Fluorescence
Fabrication
Wavelength

Keywords

  • InGaN
  • micropixellated light-emitting diode

Cite this

Gong, Z. ; Zhang, H.X. ; Gu, Erdan ; Griffin, C. ; Dawson, Martin D. ; Poher, V. ; Kennedy, G.T. ; French, P.M.W. ; Neil, M.A.A. / Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output. In: IEEE Transactions on Electron Devices. 2007 ; Vol. 54, No. 10. pp. 2650-2658.
@article{bc45c3ecc23b4daabe885486f5474593,
title = "Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output",
abstract = "Micropixellated InGaN light-emitting diodes (micro- LEDs) have a wide number of potential applications in areas including microdisplays, fluorescence-based assays and microscopy, and cell micromanipulation. Here, we present fabrication and performance details of matrix-addressable micro-LED devices which show significant improvements over their earlier counterparts. Devices with 64 × 64 micropixel elements, each of them having a 16-μm-diameter emission aperture on a 50-μm pitch, have been fabricated at blue (470 nm), green (510 nm), and UV (370 nm) wavelengths, respectively. Importantly, we have adopted a scheme of running n-metal tracks adjacent to each n-GaN mesa, so that resistance variation between the devices is reduced to below 8{\%}, in contrast to the earlier fivefold resistance variation encountered. We have also made improvements to the spreading-layer formation scheme, resulting in significant increases in output power per element, improved current handling, and reduced turn-on voltages. These devices have been combined with a computerdriven programmable driver interface operating in constantcurrent mode, and representative microdisplay outputs are presented.",
keywords = "InGaN, micropixellated light-emitting diode",
author = "Z. Gong and H.X. Zhang and Erdan Gu and C. Griffin and Dawson, {Martin D.} and V. Poher and G.T. Kennedy and P.M.W. French and M.A.A. Neil",
year = "2007",
month = "10",
doi = "10.1109/TED.2007.904991",
language = "English",
volume = "54",
pages = "2650--2658",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
number = "10",

}

Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output. / Gong, Z.; Zhang, H.X.; Gu, Erdan; Griffin, C.; Dawson, Martin D.; Poher, V.; Kennedy, G.T.; French, P.M.W.; Neil, M.A.A.

In: IEEE Transactions on Electron Devices, Vol. 54, No. 10, 10.2007, p. 2650-2658.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output

AU - Gong, Z.

AU - Zhang, H.X.

AU - Gu, Erdan

AU - Griffin, C.

AU - Dawson, Martin D.

AU - Poher, V.

AU - Kennedy, G.T.

AU - French, P.M.W.

AU - Neil, M.A.A.

PY - 2007/10

Y1 - 2007/10

N2 - Micropixellated InGaN light-emitting diodes (micro- LEDs) have a wide number of potential applications in areas including microdisplays, fluorescence-based assays and microscopy, and cell micromanipulation. Here, we present fabrication and performance details of matrix-addressable micro-LED devices which show significant improvements over their earlier counterparts. Devices with 64 × 64 micropixel elements, each of them having a 16-μm-diameter emission aperture on a 50-μm pitch, have been fabricated at blue (470 nm), green (510 nm), and UV (370 nm) wavelengths, respectively. Importantly, we have adopted a scheme of running n-metal tracks adjacent to each n-GaN mesa, so that resistance variation between the devices is reduced to below 8%, in contrast to the earlier fivefold resistance variation encountered. We have also made improvements to the spreading-layer formation scheme, resulting in significant increases in output power per element, improved current handling, and reduced turn-on voltages. These devices have been combined with a computerdriven programmable driver interface operating in constantcurrent mode, and representative microdisplay outputs are presented.

AB - Micropixellated InGaN light-emitting diodes (micro- LEDs) have a wide number of potential applications in areas including microdisplays, fluorescence-based assays and microscopy, and cell micromanipulation. Here, we present fabrication and performance details of matrix-addressable micro-LED devices which show significant improvements over their earlier counterparts. Devices with 64 × 64 micropixel elements, each of them having a 16-μm-diameter emission aperture on a 50-μm pitch, have been fabricated at blue (470 nm), green (510 nm), and UV (370 nm) wavelengths, respectively. Importantly, we have adopted a scheme of running n-metal tracks adjacent to each n-GaN mesa, so that resistance variation between the devices is reduced to below 8%, in contrast to the earlier fivefold resistance variation encountered. We have also made improvements to the spreading-layer formation scheme, resulting in significant increases in output power per element, improved current handling, and reduced turn-on voltages. These devices have been combined with a computerdriven programmable driver interface operating in constantcurrent mode, and representative microdisplay outputs are presented.

KW - InGaN

KW - micropixellated light-emitting diode

UR - http://dx.doi.org/10.1109/TED.2007.904991

U2 - 10.1109/TED.2007.904991

DO - 10.1109/TED.2007.904991

M3 - Article

VL - 54

SP - 2650

EP - 2658

JO - IEEE Transactions on Electron Devices

T2 - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

ER -