Maskless ultraviolet photolithography based on CMOS-driven micro-pixel light emitting diodes

D. Elfstrom; B.J.E. Guilhabert; J. McKendry; S.P. Poland; Z. Gong; D. Massoubre; G.J. Valentine; E. Gu; M.D. Dawson; E. Richardson; B.R. Rae; G. Blanco-Gomez; J.M. Cooper; R.K. Henderson

doi:10.1364/OE.17.023522

Maskless ultraviolet photolithography based on CMOS-driven micro-pixel light emitting diodes

D. Elfstrom, B.J.E. Guilhabert, J. McKendry, S.P. Poland, Z. Gong, D. Massoubre, G.J. Valentine, E. Gu, M.D. Dawson, E. Richardson, B.R. Rae, G. Blanco-Gomez, J.M. Cooper, R.K. Henderson

Research output: Contribution to journal › Article

20 Citations (Scopus)

Abstract

We report on an approach to ultraviolet (UV) photolithography and direct writing where both the exposure pattern and dose are determined by a complementary metal oxide semiconductor (CMOS) controlled micro-pixellated light emitting diode array. The 370 nm UV light from a demonstrator 8 x 8 gallium nitride micro-pixel LED is projected onto photoresist covered substrates using two back-to-back microscope objectives, allowing controlled demagnification. In the present setup, the system is capable of delivering up to 8.8 W/cm2 per imaged pixel in circular spots of diameter approximately 8 microm. We show example structures written in positive as well as in negative photoresist.

Original language	English
Pages (from-to)	23522-23529
Number of pages	7
Journal	Optics Express
Volume	17
Issue number	26
DOIs	https://doi.org/10.1364/OE.17.023522
Publication status	Published - 21 Dec 2009

Keywords

ultraviolet photolithography
micro-pixel
diodes

Access to Document

10.1364/OE.17.023522

1 Finished

Semiconductor-Based Hybrid Structures for Ultraviolet Micro-Devices
Dawson, M., Calvez, S., Martin, R. & Watson, I.
EPSRC (Engineering and Physical Sciences Research Council)
1/01/07 → 31/12/10
Project: Research

Cite this

Elfstrom, D., Guilhabert, B. J. E., McKendry, J., Poland, S. P., Gong, Z., Massoubre, D., Valentine, G. J., Gu, E., Dawson, M. D., Richardson, E., Rae, B. R., Blanco-Gomez, G., Cooper, J. M., & Henderson, R. K. (2009). Maskless ultraviolet photolithography based on CMOS-driven micro-pixel light emitting diodes. Optics Express, 17(26), 23522-23529. https://doi.org/10.1364/OE.17.023522

Elfstrom, D. ; Guilhabert, B.J.E. ; McKendry, J. ; Poland, S.P. ; Gong, Z. ; Massoubre, D. ; Valentine, G.J. ; Gu, E. ; Dawson, M.D. ; Richardson, E. ; Rae, B.R. ; Blanco-Gomez, G. ; Cooper, J.M. ; Henderson, R.K. / Maskless ultraviolet photolithography based on CMOS-driven micro-pixel light emitting diodes. In: Optics Express. 2009 ; Vol. 17, No. 26. pp. 23522-23529.

@article{984bcd29203d4e6d92bad9f9aea18399,

title = "Maskless ultraviolet photolithography based on CMOS-driven micro-pixel light emitting diodes",

abstract = "We report on an approach to ultraviolet (UV) photolithography and direct writing where both the exposure pattern and dose are determined by a complementary metal oxide semiconductor (CMOS) controlled micro-pixellated light emitting diode array. The 370 nm UV light from a demonstrator 8 x 8 gallium nitride micro-pixel LED is projected onto photoresist covered substrates using two back-to-back microscope objectives, allowing controlled demagnification. In the present setup, the system is capable of delivering up to 8.8 W/cm2 per imaged pixel in circular spots of diameter approximately 8 microm. We show example structures written in positive as well as in negative photoresist.",

keywords = "ultraviolet photolithography, micro-pixel, diodes",

author = "D. Elfstrom and B.J.E. Guilhabert and J. McKendry and S.P. Poland and Z. Gong and D. Massoubre and G.J. Valentine and E. Gu and M.D. Dawson and E. Richardson and B.R. Rae and G. Blanco-Gomez and J.M. Cooper and R.K. Henderson",

year = "2009",

month = dec,

day = "21",

doi = "10.1364/OE.17.023522",

language = "English",

volume = "17",

pages = "23522--23529",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optical Society of America",

number = "26",

}

Maskless ultraviolet photolithography based on CMOS-driven micro-pixel light emitting diodes. / Elfstrom, D.; Guilhabert, B.J.E.; McKendry, J.; Poland, S.P.; Gong, Z.; Massoubre, D.; Valentine, G.J.; Gu, E.; Dawson, M.D.; Richardson, E.; Rae, B.R.; Blanco-Gomez, G.; Cooper, J.M.; Henderson, R.K.

In: Optics Express, Vol. 17, No. 26, 21.12.2009, p. 23522-23529.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Maskless ultraviolet photolithography based on CMOS-driven micro-pixel light emitting diodes

AU - Elfstrom, D.

AU - Guilhabert, B.J.E.

AU - McKendry, J.

AU - Poland, S.P.

AU - Gong, Z.

AU - Massoubre, D.

AU - Valentine, G.J.

AU - Gu, E.

AU - Dawson, M.D.

AU - Richardson, E.

AU - Rae, B.R.

AU - Blanco-Gomez, G.

AU - Cooper, J.M.

AU - Henderson, R.K.

PY - 2009/12/21

Y1 - 2009/12/21

N2 - We report on an approach to ultraviolet (UV) photolithography and direct writing where both the exposure pattern and dose are determined by a complementary metal oxide semiconductor (CMOS) controlled micro-pixellated light emitting diode array. The 370 nm UV light from a demonstrator 8 x 8 gallium nitride micro-pixel LED is projected onto photoresist covered substrates using two back-to-back microscope objectives, allowing controlled demagnification. In the present setup, the system is capable of delivering up to 8.8 W/cm2 per imaged pixel in circular spots of diameter approximately 8 microm. We show example structures written in positive as well as in negative photoresist.

AB - We report on an approach to ultraviolet (UV) photolithography and direct writing where both the exposure pattern and dose are determined by a complementary metal oxide semiconductor (CMOS) controlled micro-pixellated light emitting diode array. The 370 nm UV light from a demonstrator 8 x 8 gallium nitride micro-pixel LED is projected onto photoresist covered substrates using two back-to-back microscope objectives, allowing controlled demagnification. In the present setup, the system is capable of delivering up to 8.8 W/cm2 per imaged pixel in circular spots of diameter approximately 8 microm. We show example structures written in positive as well as in negative photoresist.

KW - ultraviolet photolithography

KW - micro-pixel

KW - diodes

U2 - 10.1364/OE.17.023522

DO - 10.1364/OE.17.023522

M3 - Article

VL - 17

SP - 23522

EP - 23529

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 26

ER -

Maskless ultraviolet photolithography based on CMOS-driven micro-pixel light emitting diodes

Abstract

Keywords

Access to Document

Semiconductor-Based Hybrid Structures for Ultraviolet Micro-Devices

Cite this