Mask-free photolithographic exposure using a matrix-addressable micropixellated AllnGaN ultraviolet light-emitting diode

C.W. Jeon, E. Gu, M.D. Dawson

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

We report the integration of a UV-curable polymer microlens array onto a matrix-addressable, 368-nm-wavelength, light-emitting diode device containing 64×64 micropixel elements. The geometrical and optical parameters of the microlenses were carefully chosen to allow the highly divergent emission from each micropixel to be collimated into a narrow beam of about 8-µm diam, over a distance of more than 500 µm. This device is demonstrated as a photolithographic exposure tool, where the pattern-programmable array plays the role both of light source and photomask. A simple pattern comprised of two disks having 16-µm diam and 30-µm spacing was transferred into an i-line photoresist.
LanguageEnglish
JournalApplied Physics Letters
Volume86
Issue number221105
DOIs
Publication statusPublished - 2005

Fingerprint

ultraviolet radiation
light emitting diodes
masks
photomasks
matrices
photoresists
light sources
spacing
polymers
wavelengths

Keywords

  • aluminium compounds
  • indium compounds
  • gallium compounds
  • semiconductors
  • light emitting diodes
  • microlenses
  • optical polymers
  • etching
  • photonics
  • optics

Cite this

@article{f89509378acc49909f0c91a1bc6ebeb1,
title = "Mask-free photolithographic exposure using a matrix-addressable micropixellated AllnGaN ultraviolet light-emitting diode",
abstract = "We report the integration of a UV-curable polymer microlens array onto a matrix-addressable, 368-nm-wavelength, light-emitting diode device containing 64×64 micropixel elements. The geometrical and optical parameters of the microlenses were carefully chosen to allow the highly divergent emission from each micropixel to be collimated into a narrow beam of about 8-µm diam, over a distance of more than 500 µm. This device is demonstrated as a photolithographic exposure tool, where the pattern-programmable array plays the role both of light source and photomask. A simple pattern comprised of two disks having 16-µm diam and 30-µm spacing was transferred into an i-line photoresist.",
keywords = "aluminium compounds, indium compounds, gallium compounds, semiconductors, light emitting diodes, microlenses, optical polymers, etching, photonics, optics",
author = "C.W. Jeon and E. Gu and M.D. Dawson",
year = "2005",
doi = "10.1063/1.1942636",
language = "English",
volume = "86",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "221105",

}

TY - JOUR

T1 - Mask-free photolithographic exposure using a matrix-addressable micropixellated AllnGaN ultraviolet light-emitting diode

AU - Jeon, C.W.

AU - Gu, E.

AU - Dawson, M.D.

PY - 2005

Y1 - 2005

N2 - We report the integration of a UV-curable polymer microlens array onto a matrix-addressable, 368-nm-wavelength, light-emitting diode device containing 64×64 micropixel elements. The geometrical and optical parameters of the microlenses were carefully chosen to allow the highly divergent emission from each micropixel to be collimated into a narrow beam of about 8-µm diam, over a distance of more than 500 µm. This device is demonstrated as a photolithographic exposure tool, where the pattern-programmable array plays the role both of light source and photomask. A simple pattern comprised of two disks having 16-µm diam and 30-µm spacing was transferred into an i-line photoresist.

AB - We report the integration of a UV-curable polymer microlens array onto a matrix-addressable, 368-nm-wavelength, light-emitting diode device containing 64×64 micropixel elements. The geometrical and optical parameters of the microlenses were carefully chosen to allow the highly divergent emission from each micropixel to be collimated into a narrow beam of about 8-µm diam, over a distance of more than 500 µm. This device is demonstrated as a photolithographic exposure tool, where the pattern-programmable array plays the role both of light source and photomask. A simple pattern comprised of two disks having 16-µm diam and 30-µm spacing was transferred into an i-line photoresist.

KW - aluminium compounds

KW - indium compounds

KW - gallium compounds

KW - semiconductors

KW - light emitting diodes

KW - microlenses

KW - optical polymers

KW - etching

KW - photonics

KW - optics

UR - http://dx.doi.org/10.1063/1.1942636

U2 - 10.1063/1.1942636

DO - 10.1063/1.1942636

M3 - Article

VL - 86

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 221105

ER -