Luminescent properties of GaN thin films prepared by pulsed laser deposition

M. Cazzanelli, C. Vinegoni, D. Cole, J. G. Lunney, P. G. Middleton, C. Trager-Cowan, K. P. O'Donnell, L. Pavesi

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

The luminescent properties of GaN thin films grown by pulsed laser deposition have been studied to understand the nature of the luminescent centres and the recombination dynamics. The films were grown on heated sapphire substrates using KrF excimer laser ablation of GaN in a reactive atmosphere of nitrogen. At low temperature the continuous wave (CW) blue luminescence of the samples grown shows two sharp lines attributed to excitonic recombination localized at extended defects. An analysis of the temperature dependence of photoluminescence (PL) lifetimes assess the relative contributions of radiative and non-radiative recombination in the centres responsible for these emissions. The measurement of room temperature nanosecond radiative lifetimes for these lines supports the excitonic attribution of the luminescence.

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Pulsed laser deposition
pulsed laser deposition
luminescence
Thin films
Luminescence
radiative lifetime
radiative recombination
thin films
excimer lasers
laser ablation
continuous radiation
sapphire
Aluminum Oxide
Excimer lasers
Laser ablation
photoluminescence
nitrogen
Sapphire
atmospheres
life (durability)

Cite this

Cazzanelli, M. ; Vinegoni, C. ; Cole, D. ; Lunney, J. G. ; Middleton, P. G. ; Trager-Cowan, C. ; O'Donnell, K. P. ; Pavesi, L. / Luminescent properties of GaN thin films prepared by pulsed laser deposition. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 1999 ; Vol. 59, No. 1-3. pp. 137-140.
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abstract = "The luminescent properties of GaN thin films grown by pulsed laser deposition have been studied to understand the nature of the luminescent centres and the recombination dynamics. The films were grown on heated sapphire substrates using KrF excimer laser ablation of GaN in a reactive atmosphere of nitrogen. At low temperature the continuous wave (CW) blue luminescence of the samples grown shows two sharp lines attributed to excitonic recombination localized at extended defects. An analysis of the temperature dependence of photoluminescence (PL) lifetimes assess the relative contributions of radiative and non-radiative recombination in the centres responsible for these emissions. The measurement of room temperature nanosecond radiative lifetimes for these lines supports the excitonic attribution of the luminescence.",
author = "M. Cazzanelli and C. Vinegoni and D. Cole and Lunney, {J. G.} and Middleton, {P. G.} and C. Trager-Cowan and O'Donnell, {K. P.} and L. Pavesi",
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Luminescent properties of GaN thin films prepared by pulsed laser deposition. / Cazzanelli, M.; Vinegoni, C.; Cole, D.; Lunney, J. G.; Middleton, P. G.; Trager-Cowan, C.; O'Donnell, K. P.; Pavesi, L.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 59, No. 1-3, 06.05.1999, p. 137-140.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Luminescent properties of GaN thin films prepared by pulsed laser deposition

AU - Cazzanelli, M.

AU - Vinegoni, C.

AU - Cole, D.

AU - Lunney, J. G.

AU - Middleton, P. G.

AU - Trager-Cowan, C.

AU - O'Donnell, K. P.

AU - Pavesi, L.

PY - 1999/5/6

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N2 - The luminescent properties of GaN thin films grown by pulsed laser deposition have been studied to understand the nature of the luminescent centres and the recombination dynamics. The films were grown on heated sapphire substrates using KrF excimer laser ablation of GaN in a reactive atmosphere of nitrogen. At low temperature the continuous wave (CW) blue luminescence of the samples grown shows two sharp lines attributed to excitonic recombination localized at extended defects. An analysis of the temperature dependence of photoluminescence (PL) lifetimes assess the relative contributions of radiative and non-radiative recombination in the centres responsible for these emissions. The measurement of room temperature nanosecond radiative lifetimes for these lines supports the excitonic attribution of the luminescence.

AB - The luminescent properties of GaN thin films grown by pulsed laser deposition have been studied to understand the nature of the luminescent centres and the recombination dynamics. The films were grown on heated sapphire substrates using KrF excimer laser ablation of GaN in a reactive atmosphere of nitrogen. At low temperature the continuous wave (CW) blue luminescence of the samples grown shows two sharp lines attributed to excitonic recombination localized at extended defects. An analysis of the temperature dependence of photoluminescence (PL) lifetimes assess the relative contributions of radiative and non-radiative recombination in the centres responsible for these emissions. The measurement of room temperature nanosecond radiative lifetimes for these lines supports the excitonic attribution of the luminescence.

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U2 - 10.1016/S0921-5107(98)00333-X

DO - 10.1016/S0921-5107(98)00333-X

M3 - Conference article

VL - 59

SP - 137

EP - 140

JO - Materials Science and Engineering B

T2 - Materials Science and Engineering B

JF - Materials Science and Engineering B

SN - 0921-5107

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