Abstract
The luminescent properties of GaN thin films grown by pulsed laser deposition have been studied to understand the nature of the luminescent centres and the recombination dynamics. The films were grown on heated sapphire substrates using KrF excimer laser ablation of GaN in a reactive atmosphere of nitrogen. At low temperature the continuous wave (CW) blue luminescence of the samples grown shows two sharp lines attributed to excitonic recombination localized at extended defects. An analysis of the temperature dependence of photoluminescence (PL) lifetimes assess the relative contributions of radiative and non-radiative recombination in the centres responsible for these emissions. The measurement of room temperature nanosecond radiative lifetimes for these lines supports the excitonic attribution of the luminescence.
| Original language | English |
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| Pages (from-to) | 137-140 |
| Number of pages | 4 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 59 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 6 May 1999 |
| Event | Proceedings of the 1998 Symposium L: on Nitrides and Related Wide Band Gap Materials (E-MRS Meeting) - Strasbourg Duration: 16 Jun 1998 → 19 Jun 1998 |
Funding
Discussions with C. Wetzel are gratefully acknowledged. The work at Trinity College Dublin was supported by the EU under BRITE-EURAM project BRPR-CT96-0295 and by Forbairt, the Irish Science and Technology agency. The Italian section was supported by INFM and ‘Progetto Speciale’, University of Trento.