Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen

Marco A. Sousa, Teresa C. Esteves, Nabiha Ben Sedrine, Joana Rodrigues, Márcio B. Lourenço, Andrés Redondo-Cubero, Eduardo Alves, Kevin P. O'Donnell, Michal Bockowski, Christian Wetzel, Maria R. Correia, Katharina Lorenz, Teresa Monteiro

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We studied the optical properties of metalorganic chemical vapour deposited (MOCVD) InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post-growth annealing treatments. The optical characterization was carried out by means of temperature and excitation density-dependent steady state photoluminescence (PL) spectroscopy, supplemented by room temperature PL excitation (PLE) and PL lifetime (PLL) measurements. The as-grown and as-implanted samples were found to exhibit a single green emission band attributed to localized excitons in the QW, although the N implantation leads to a strong reduction of the PL intensity. The green band was found to be surprisingly stable on annealing up to 1400°C. A broad blue band dominates the low temperature PL after thermal annealing in both samples. This band is more intense for the implanted sample, suggesting that defects generated by N implantation, likely related to the diffusion/segregation of indium (In), have been optically activated by the thermal treatment.

LanguageEnglish
Article number9703
Number of pages6
JournalScientific Reports
Volume5
DOIs
Publication statusPublished - 13 Apr 2015

Fingerprint

luminescence
photoluminescence
nitrogen
implantation
annealing
excitation
indium
excitons
quantum wells
vapors
optical properties
life (durability)
defects
room temperature
spectroscopy
temperature

Keywords

  • multi quantum wells
  • luminescence
  • light emitting diodes

Cite this

Sousa, M. A., Esteves, T. C., Sedrine, N. B., Rodrigues, J., Lourenço, M. B., Redondo-Cubero, A., ... Monteiro, T. (2015). Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen. Scientific Reports, 5, [9703]. https://doi.org/10.1038/srep09703
Sousa, Marco A. ; Esteves, Teresa C. ; Sedrine, Nabiha Ben ; Rodrigues, Joana ; Lourenço, Márcio B. ; Redondo-Cubero, Andrés ; Alves, Eduardo ; O'Donnell, Kevin P. ; Bockowski, Michal ; Wetzel, Christian ; Correia, Maria R. ; Lorenz, Katharina ; Monteiro, Teresa. / Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen. In: Scientific Reports. 2015 ; Vol. 5.
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abstract = "We studied the optical properties of metalorganic chemical vapour deposited (MOCVD) InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post-growth annealing treatments. The optical characterization was carried out by means of temperature and excitation density-dependent steady state photoluminescence (PL) spectroscopy, supplemented by room temperature PL excitation (PLE) and PL lifetime (PLL) measurements. The as-grown and as-implanted samples were found to exhibit a single green emission band attributed to localized excitons in the QW, although the N implantation leads to a strong reduction of the PL intensity. The green band was found to be surprisingly stable on annealing up to 1400°C. A broad blue band dominates the low temperature PL after thermal annealing in both samples. This band is more intense for the implanted sample, suggesting that defects generated by N implantation, likely related to the diffusion/segregation of indium (In), have been optically activated by the thermal treatment.",
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Sousa, MA, Esteves, TC, Sedrine, NB, Rodrigues, J, Lourenço, MB, Redondo-Cubero, A, Alves, E, O'Donnell, KP, Bockowski, M, Wetzel, C, Correia, MR, Lorenz, K & Monteiro, T 2015, 'Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen' Scientific Reports, vol. 5, 9703. https://doi.org/10.1038/srep09703

Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen. / Sousa, Marco A.; Esteves, Teresa C.; Sedrine, Nabiha Ben; Rodrigues, Joana; Lourenço, Márcio B.; Redondo-Cubero, Andrés; Alves, Eduardo; O'Donnell, Kevin P.; Bockowski, Michal; Wetzel, Christian; Correia, Maria R.; Lorenz, Katharina; Monteiro, Teresa.

In: Scientific Reports, Vol. 5, 9703, 13.04.2015.

Research output: Contribution to journalArticle

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T1 - Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen

AU - Sousa, Marco A.

AU - Esteves, Teresa C.

AU - Sedrine, Nabiha Ben

AU - Rodrigues, Joana

AU - Lourenço, Márcio B.

AU - Redondo-Cubero, Andrés

AU - Alves, Eduardo

AU - O'Donnell, Kevin P.

AU - Bockowski, Michal

AU - Wetzel, Christian

AU - Correia, Maria R.

AU - Lorenz, Katharina

AU - Monteiro, Teresa

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N2 - We studied the optical properties of metalorganic chemical vapour deposited (MOCVD) InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post-growth annealing treatments. The optical characterization was carried out by means of temperature and excitation density-dependent steady state photoluminescence (PL) spectroscopy, supplemented by room temperature PL excitation (PLE) and PL lifetime (PLL) measurements. The as-grown and as-implanted samples were found to exhibit a single green emission band attributed to localized excitons in the QW, although the N implantation leads to a strong reduction of the PL intensity. The green band was found to be surprisingly stable on annealing up to 1400°C. A broad blue band dominates the low temperature PL after thermal annealing in both samples. This band is more intense for the implanted sample, suggesting that defects generated by N implantation, likely related to the diffusion/segregation of indium (In), have been optically activated by the thermal treatment.

AB - We studied the optical properties of metalorganic chemical vapour deposited (MOCVD) InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post-growth annealing treatments. The optical characterization was carried out by means of temperature and excitation density-dependent steady state photoluminescence (PL) spectroscopy, supplemented by room temperature PL excitation (PLE) and PL lifetime (PLL) measurements. The as-grown and as-implanted samples were found to exhibit a single green emission band attributed to localized excitons in the QW, although the N implantation leads to a strong reduction of the PL intensity. The green band was found to be surprisingly stable on annealing up to 1400°C. A broad blue band dominates the low temperature PL after thermal annealing in both samples. This band is more intense for the implanted sample, suggesting that defects generated by N implantation, likely related to the diffusion/segregation of indium (In), have been optically activated by the thermal treatment.

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Sousa MA, Esteves TC, Sedrine NB, Rodrigues J, Lourenço MB, Redondo-Cubero A et al. Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen. Scientific Reports. 2015 Apr 13;5. 9703. https://doi.org/10.1038/srep09703