Luminescence spectroscopy of Eu-implanted zincblende GaN

I.S. Roqan, K.P. O'Donnell, C. Trager-Cowan, B. Hourahine, R.W. Martin, K. Lorenz, E. Alves, D.J. As, M. Panfilova, I.M. Watson

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Cathodoluminescence (CL) and Photoluminescence (PL) of Eu-implanted zincblende-GaN (ZB-GaN:Eu) and wurtzite-GaN (W-GaN:Eu) are compared in order to investigate the optical activation of GaN by Eu. The EU3+ emission spectrum depends critically on the crystal structure of the GaN host; implantation and post-annealing at 800 degrees C partially converts implantation-damaged ZB-GaN:Eu to W-GaN:Eu. Selective excitation of PL at wavelengths below the ZB-GaN band edge reveals a new sharp emission line at 627 nm, together with a number of satellites, which we ascribe to ZB-GaN: Eu.

LanguageEnglish
Pages170-173
Number of pages4
JournalPhysica Status Solidi B
Volume245
Issue number1
DOIs
Publication statusPublished - Jan 2008

Fingerprint

zincblende
Luminescence
implantation
Photoluminescence
Spectroscopy
luminescence
photoluminescence
Cathodoluminescence
cathodoluminescence
wurtzite
spectroscopy
emission spectra
Crystal structure
Chemical activation
Satellites
activation
Annealing
Wavelength
crystal structure
annealing

Keywords

  • luminescence spectroscopy
  • spectroscopy
  • zincblende GaN
  • cathodoluminescence
  • photoluminescence

Cite this

Roqan, I.S. ; O'Donnell, K.P. ; Trager-Cowan, C. ; Hourahine, B. ; Martin, R.W. ; Lorenz, K. ; Alves, E. ; As, D.J. ; Panfilova, M. ; Watson, I.M. / Luminescence spectroscopy of Eu-implanted zincblende GaN. In: Physica Status Solidi B. 2008 ; Vol. 245, No. 1. pp. 170-173.
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abstract = "Cathodoluminescence (CL) and Photoluminescence (PL) of Eu-implanted zincblende-GaN (ZB-GaN:Eu) and wurtzite-GaN (W-GaN:Eu) are compared in order to investigate the optical activation of GaN by Eu. The EU3+ emission spectrum depends critically on the crystal structure of the GaN host; implantation and post-annealing at 800 degrees C partially converts implantation-damaged ZB-GaN:Eu to W-GaN:Eu. Selective excitation of PL at wavelengths below the ZB-GaN band edge reveals a new sharp emission line at 627 nm, together with a number of satellites, which we ascribe to ZB-GaN: Eu.",
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Luminescence spectroscopy of Eu-implanted zincblende GaN. / Roqan, I.S.; O'Donnell, K.P.; Trager-Cowan, C.; Hourahine, B.; Martin, R.W.; Lorenz, K.; Alves, E.; As, D.J.; Panfilova, M.; Watson, I.M.

In: Physica Status Solidi B, Vol. 245, No. 1, 01.2008, p. 170-173.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Luminescence spectroscopy of Eu-implanted zincblende GaN

AU - Roqan, I.S.

AU - O'Donnell, K.P.

AU - Trager-Cowan, C.

AU - Hourahine, B.

AU - Martin, R.W.

AU - Lorenz, K.

AU - Alves, E.

AU - As, D.J.

AU - Panfilova, M.

AU - Watson, I.M.

PY - 2008/1

Y1 - 2008/1

N2 - Cathodoluminescence (CL) and Photoluminescence (PL) of Eu-implanted zincblende-GaN (ZB-GaN:Eu) and wurtzite-GaN (W-GaN:Eu) are compared in order to investigate the optical activation of GaN by Eu. The EU3+ emission spectrum depends critically on the crystal structure of the GaN host; implantation and post-annealing at 800 degrees C partially converts implantation-damaged ZB-GaN:Eu to W-GaN:Eu. Selective excitation of PL at wavelengths below the ZB-GaN band edge reveals a new sharp emission line at 627 nm, together with a number of satellites, which we ascribe to ZB-GaN: Eu.

AB - Cathodoluminescence (CL) and Photoluminescence (PL) of Eu-implanted zincblende-GaN (ZB-GaN:Eu) and wurtzite-GaN (W-GaN:Eu) are compared in order to investigate the optical activation of GaN by Eu. The EU3+ emission spectrum depends critically on the crystal structure of the GaN host; implantation and post-annealing at 800 degrees C partially converts implantation-damaged ZB-GaN:Eu to W-GaN:Eu. Selective excitation of PL at wavelengths below the ZB-GaN band edge reveals a new sharp emission line at 627 nm, together with a number of satellites, which we ascribe to ZB-GaN: Eu.

KW - luminescence spectroscopy

KW - spectroscopy

KW - zincblende GaN

KW - cathodoluminescence

KW - photoluminescence

U2 - 10.1002/pssb.200743372

DO - 10.1002/pssb.200743372

M3 - Article

VL - 245

SP - 170

EP - 173

JO - Physica Status Solidi B

T2 - Physica Status Solidi B

JF - Physica Status Solidi B

SN - 0370-1972

IS - 1

ER -