Luminescence spectroscopy of Eu-implanted zincblende GaN

I.S. Roqan, K.P. O'Donnell, C. Trager-Cowan, B. Hourahine, R.W. Martin, K. Lorenz, E. Alves, D.J. As, M. Panfilova, I.M. Watson

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Cathodoluminescence (CL) and Photoluminescence (PL) of Eu-implanted zincblende-GaN (ZB-GaN:Eu) and wurtzite-GaN (W-GaN:Eu) are compared in order to investigate the optical activation of GaN by Eu. The EU3+ emission spectrum depends critically on the crystal structure of the GaN host; implantation and post-annealing at 800 degrees C partially converts implantation-damaged ZB-GaN:Eu to W-GaN:Eu. Selective excitation of PL at wavelengths below the ZB-GaN band edge reveals a new sharp emission line at 627 nm, together with a number of satellites, which we ascribe to ZB-GaN: Eu.

Original languageEnglish
Pages (from-to)170-173
Number of pages4
JournalPhysica Status Solidi B
Volume245
Issue number1
DOIs
Publication statusPublished - Jan 2008

Keywords

  • luminescence spectroscopy
  • spectroscopy
  • zincblende GaN
  • cathodoluminescence
  • photoluminescence

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